Patents by Inventor Tomohiro Funahashi

Tomohiro Funahashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating a semiconductor pressure sensor
    Patent number: 4975390
    Abstract: Herein disclosed is a semiconductor pressure sensor and a method of manufacture. The sensor includes a plate having a recess in its main surface. A diaphragm has a lower surface therof bonded to a first main surface of the plate and formed so as to have an upper surface having no holes therein. A piezoresistive layer is formed so as to be in contact with the diaphragm and is positioned so as to be at least partially over the recess. The resistance of the piezoresistive layer provides an indication of pressure applied to the diaphragm. The manufacturing method includes forming a piezoresistive layer of a single crystal substrate in a diaphragm without any recrystallization.
    Type: Grant
    Filed: December 8, 1987
    Date of Patent: December 4, 1990
    Assignee: Nippondenso Co. Ltd.
    Inventors: Tetsuo Fujii, Susumu Kuroyanagi, Akira Kuroyanagi, Tomohiro Funahashi, Minekazu Sakai, Shinji Yoshihara