Abstract: A sample observation device of the invention includes: a charged particle optical column for irradiating a sample with charged particle beams at a first acceleration voltage, the sample having a target part to be observed which is a concave part; an image acquisition part for acquiring an image including the target part to be observed on the basis of signals obtained by irradiation with the charged particle beams; a memory part for memorizing in advance, at each of a plurality of acceleration voltages, information indicating a relationship between a brightness ratio of a concave part to a periphery part of the concave part in a standard sample and a value indicating a structure of the concave part in the standard sample; and an operation part for obtaining a brightness ratio of the concave part to a periphery part of the concave part in the image.

Abstract: An overlay misalignment amount of patterns on different layers can be accurately measured. To achieve this, a charged particle beam device includes: a charged particle beam source irradiating a sample with a charged particle beam under one irradiation condition; a first detector that detects a signal generated front a first pattern formed on a first layer in an irradiation region; a second detector that detects a signal generated from a second pattern formed on a second layer in the irradiation region at a same time as the first detector; and an image processing unit that calculates an overlay misalignment amount between the first pattern and the second pattern based on a first detection signal and a second detection signal output by the first detector and the second detector, respectively.

Abstract: A sample observation device of the invention includes: a charged particle optical column for irradiating a sample with charged particle beams at a first acceleration voltage, the sample having a target part to be observed which is a concave part; an image acquisition part for acquiring an image including the target part to be observed on the basis of signals obtained by irradiation with the charged particle beams; a memory part for memorizing in advance, at each of a plurality of acceleration voltages, information indicating a relationship between a brightness ratio of a concave part to a periphery part of the concave part in a standard sample and a value indicating a structure of the concave part in the standard sample; and an operation part for obtaining a brightness ratio of the concave part to a periphery part of the concave part in the image.

Abstract: An overlay misalignment amount of patterns on different layers can be accurately measured. To achieve this, a charged particle beam device includes: a charged particle beam source irradiating a sample with a charged particle beam under one irradiation condition; a first detector that detects a signal generated front a first pattern formed on a first layer in an irradiation region; a second detector that detects a signal generated from a second pattern formed on a second layer in the irradiation region at a same time as the first detector; and an image processing unit that calculates an overlay misalignment amount between the first pattern and the second pattern based on a first detection signal and a second detection signal output by the first detector and the second detector, respectively.

Abstract: A defect image processing apparatus uses a normalized cross correlation to image-match a layout image (52) acquired from a design data with an image acquired by removing, from a defect image (53), the defect area portions thereof, and displays, as a result of that matching, a layout image and defect image (54) on the display device. In the displayed layout image & defect image (54), not only the layout image, the layer of which is the same as that of the defect image (53), but also a layout image of another layer is displayed superimposed on the defect image (53). This makes it easier to analyze the factor of a systematic defect having occurred due to a positional relationship with another layer.

Abstract: It is an object of the present invention to provide a technique capable of accurately inspecting a circuit pattern in which the contrast of an observation image is not clear, like a circuit pattern having a multilayer structure. A pattern inspection method according to the present invention divides a circuit pattern using the brightness of a reflection electron image and associates the region in the reflection electron image belonging to each division with the region in a secondary electron image.

Abstract: The objective is to improve a classification standard. Classification standard data, in which is registered image data information that is the standard when image data is classified, and classification data, in which is registered image data information that is the result when newly input image data is classified using the classification standard data, are stored in a storage unit. An image classification device is characterized in that when any image data information of the image data that is registered in the classification data is selected by means of an input unit, and an instruction to additionally register the selected image data information in the classification standard data is input by means of the input unit, the selected image data information is additionally registered in the classification standard data.

Abstract: A surface inspection tool 110 measures scattering light intensity of scattering light generated by irradiated irradiation light in association with a measurement coordinate on a wafer 200 with patterns and inspects the surface roughness of the wafer 200. The surface inspection tool includes a controller 250 which extracts measurement coordinate of the measured scattering light intensity that is equal to or more than a lower limit threshold L, sets an inspection range 406 of the surface roughness inspection in a partial layout 405a of a part of the whole layout 401 of the pattern corresponding to the periphery of the extracted measurement coordinate, and obtains the surface roughness in the inspection range 406.

Abstract: Provided is an observation condition determination support device which can improve the defect classification accuracy.

Abstract: A surface inspection tool 110 measures scattering light intensity of scattering light generated by irradiated irradiation light in association with a measurement coordinate on a wafer 200 with patterns and inspects the surface roughness of the wafer 200. The surface inspection tool includes a controller 250 which extracts measurement coordinate of the measured scattering light intensity that is equal to or more than a lower limit threshold L, sets an inspection range 406 of the surface roughness inspection in a partial layout 405a of a part of the whole layout 401 of the pattern corresponding to the periphery of the extracted measurement coordinate, and obtains the surface roughness in the inspection range 406.

Abstract: An object of the invention is to provide a defect inspection method which can prevent the failure in detecting a defect, caused by saturation of a pattern signal obtained by inspecting an inspected object, so that the investigation of the cause for defect occurrence can be done earlier. To achieve this object, according to an embodiment of the invention, there is provided a defect inspection that irradiates laser light on an inspected object having a pattern formed thereon, detects a signal from the inspected object and thereby detects a defect, the inspection including: inputting pattern information contained in layout data on the inspected object; determining based on the inputted pattern information, at least one of arrangement, repetitiveness and density for each of a plurality of inspected areas of the inspected object; estimating a saturation level of the detected signal based on the determination result; and determining a transmittance condition so that the signal does not saturate.

Abstract: It is an object of the present invention to provide a technique capable of accurately inspecting a circuit pattern in which the contrast of an observation image is not clear, like a circuit pattern having a multilayer structure. A pattern inspection method according to the present invention divides a circuit pattern using the brightness of a reflection electron image and associates the region in the reflection electron image belonging to each division with the region in a secondary electron image (see FIG. 3).

Abstract: A surface inspection tool 110 measures scattering light intensity of scattering light generated by irradiated irradiation light in association with a measurement coordinate on a wafer 200 with patterns and inspects the surface roughness of the wafer 200. The surface inspection tool includes a controller 250 which extracts measurement coordinate of the measured scattering light intensity that is equal to or more than a lower limit threshold L, sets an inspection range 406 of the surface roughness inspection in a partial layout 405a of a part of the whole layout 401 of the pattern corresponding to the periphery of the extracted measurement coordinate, and obtains the surface roughness in the inspection range 406.

Abstract: In order to allow to easily specify inspection recipe with which defects desired to be detected can be detected efficiently, a defect inspection apparatus performs defect inspection of a substrate in accordance with a plurality of inspection recipes and produces defect information associated with position of defect in the substrate and attribute data of the defect for each of the inspection recipes and a defect review apparatus produces review result information specifying a kind of defect selected from defects contained in the defect information. An analyzing apparatus obtains defect information and review result information and totalizes the number of defects having attribute data similar to attribute data possessed in defects corresponding to kind of defects to be analyzed for each inspection recipe.

Abstract: To reduce the time taken to prepare a defect review report and to thereby improve the convenience of a defect review device or for an inspection system user. The above object is attained by implementing a review report preparation tool having a function to edit the layout of a review report in a data processing terminal.

Abstract: A defect detected by a wafer inspection tool is reliably captured by a defect review tool. A defect review condition in the defect review tool is varied depending on defect attributes provided by the wafer inspection tool so as to optimize the review process. For example, review magnification is varied depending on the size of the defect, or the frame addition number is varied depending on the maximum gray level difference.

Abstract: A defect image processing apparatus uses a normalized cross correlation to image-match a layout image (52) acquired from a design data with an image acquired by removing, from a defect image (53), the defect area portions thereof, and displays, as a result of that matching, a layout image and defect image (54) on the display device. In the displayed layout image & defect image (54), not only the layout image, the layer of which is the same as that of the defect image (53), but also a layout image of another layer is displayed superimposed on the defect image (53). This makes it easier to analyze the factor of a systematic defect having occurred due to a positional relationship with another layer.

Abstract: An object of the present invention is to provide a surface inspection tool in which a flat inspection range capable of measuring surface roughness of a wafer with patterns with high accuracy and in a nondestructive manner can be searched without visual search. In order to solve the object, in a surface inspection tool 110 which measures scattering light intensity of scattering light generated by irradiated irradiation light in association with a measurement coordinate on a wafer 200 with patterns and inspects the surface roughness of the wafer 200, the surface inspection tool includes a controller 250 which extracts measurement coordinate of the measured scattering light intensity that is equal to or more than a lower limit threshold L, sets an inspection range 406 of the surface roughness inspection in a partial layout 405a of a part of the whole layout 401 of the pattern corresponding to the periphery of the extracted measurement coordinate, and obtains the surface roughness in the inspection range 406.

Abstract: Provided is an observation condition determination support device which can improve the defect classification accuracy.

Abstract: The objective is to improve a classification standard. Classification standard data, in which is registered image data information that is the standard when image data is classified, and classification data, in which is registered image data information that is the result when newly input image data is classified using the classification standard data, are stored in a storage unit. An image classification device is characterized in that when any image data information of the image data that is registered in the classification data is selected by means of an input unit, and an instruction to additionally register the selected image data information in the classification standard data is input by means of the input unit, the selected image data information is additionally registered in the classification standard data.