Patents by Inventor Tomohiro HIEDA
Tomohiro HIEDA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10790242Abstract: According to the present invention, a semiconductor device includes a substrate having a metallic pattern formed on a top surface of the substrate, a semiconductor chip provided on the metallic pattern, a back surface electrode terminal in flat plate form connected to the metallic pattern with a wire, a front surface electrode terminal in flat plate form, the front surface electrode terminal being in parallel to the back surface electrode terminal above the back surface electrode terminal, extending immediately above the semiconductor chip, and being directly joined to a top surface of the semiconductor chip, a case surrounding the substrate and a seal material for sealing an inside of the case.Type: GrantFiled: April 16, 2019Date of Patent: September 29, 2020Assignee: Mitsubishi Electric CorporationInventors: Tetsuo Yamashita, Tomohiro Hieda, Masaomi Miyazawa
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Patent number: 10564048Abstract: According to the present invention, a semiconductor device includes a semiconductor chip, resistance of which changes in accordance with temperature, an external resistor connected in series with the semiconductor chip and a detector configured to detect, while a first voltage is applied between both ends of a series circuit formed by the semiconductor chip and the external resistor, a second voltage applied between both ends of the external resistor, wherein the detector calculates a temperature of the semiconductor chip from the second voltage.Type: GrantFiled: February 8, 2019Date of Patent: February 18, 2020Assignee: Mitsubishi Electric CorporationInventors: Tetsuo Yamashita, Tomohiro Hieda, Hiroki Muraoka, Mituharu Tabata, Koichi Masuda
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Publication number: 20200011743Abstract: According to the present invention, a semiconductor device includes a semiconductor chip, resistance of which changes in accordance with temperature, an external resistor connected in series with the semiconductor chip and a detector configured to detect, while a first voltage is applied between both ends of a series circuit formed by the semiconductor chip and the external resistor, a second voltage applied between both ends of the external resistor, wherein the detector calculates a temperature of the semiconductor chip from the second voltage.Type: ApplicationFiled: February 8, 2019Publication date: January 9, 2020Applicant: Mitsubishi Electric CorporationInventors: Tetsuo YAMASHITA, Tomohiro HIEDA, Hiroki MURAOKA, Mituharu TABATA, Koichi MASUDA
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Publication number: 20190244913Abstract: According to the present invention, a semiconductor device includes a substrate having a metallic pattern formed on a top surface of the substrate, a semiconductor chip provided on the metallic pattern, a back surface electrode terminal in flat plate form connected to the metallic pattern with a wire, a front surface electrode terminal in flat plate form, the front surface electrode terminal being in parallel to the back surface electrode terminal above the back surface electrode terminal, extending immediately above the semiconductor chip, and being directly joined to a top surface of the semiconductor chip, a case surrounding the substrate and a seal material for sealing an inside of the case.Type: ApplicationFiled: April 16, 2019Publication date: August 8, 2019Applicant: Mitsubishi Electric CorporationInventors: Tetsuo YAMASHITA, Tomohiro HIEDA, Masaomi MIYAZAWA
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Patent number: 10347593Abstract: According to the present invention, a semiconductor device includes a substrate having a metallic pattern formed on a top surface of the substrate, a semiconductor chip provided on the metallic pattern, a back surface electrode terminal in flat plate form connected to the metallic pattern with a wire, a front surface electrode terminal in flat plate form, the front surface electrode terminal being in parallel to the back surface electrode terminal above the back surface electrode terminal, extending immediately above the semiconductor chip, and being directly joined to a top surface of the semiconductor chip, a case surrounding the substrate and a seal material for sealing an inside of the case.Type: GrantFiled: December 14, 2017Date of Patent: July 9, 2019Assignee: Mitsubishi Electric CorporationInventors: Tetsuo Yamashita, Tomohiro Hieda, Masaomi Miyazawa
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Publication number: 20180301421Abstract: According to the present invention, a semiconductor device includes a substrate having a metallic pattern formed on a top surface of the substrate, a semiconductor chip provided on the metallic pattern, a back surface electrode terminal in flat plate form connected to the metallic pattern with a wire, a front surface electrode terminal in flat plate form, the front surface electrode terminal being in parallel to the back surface electrode terminal above the back surface electrode terminal, extending immediately above the semiconductor chip, and being directly joined to a top surface of the semiconductor chip, a case surrounding the substrate and a seal material for sealing an inside of the case.Type: ApplicationFiled: December 14, 2017Publication date: October 18, 2018Applicant: Mitsubishi Electric CorporationInventors: Tetsuo YAMASHITA, Tomohiro HIEDA, Masaomi MIYAZAWA
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Patent number: 9721861Abstract: A semiconductor device includes a semiconductor element and a ceramic circuit substrate on which the semiconductor element is mounted. The ceramic circuit substrate includes a ceramic substrate having one surface and the other surface facing each other, a metal circuit board joined to the one surface of the ceramic substrate and electrically connected to the semiconductor element, and a metal heat-dissipation plate joined to the other surface of the ceramic substrate. The metal circuit board is greater in thickness than the metal heat-dissipation plate. A surface of the metal heat-dissipation plate on a side opposite to the ceramic substrate is larger in area than a surface of the metal circuit board on a side opposite to the ceramic substrate. Thereby, a semiconductor device capable of suppressing warpage of the ceramic substrate can be achieved.Type: GrantFiled: April 15, 2015Date of Patent: August 1, 2017Assignee: Mitsubishi Electric CorporationInventors: Yoshitaka Otsubo, Takuya Takahashi, Masaomi Miyazawa, Tetsuo Yamashita, Tomohiro Hieda, Mituharu Tabata
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Publication number: 20160095213Abstract: A semiconductor device includes a semiconductor element and a ceramic circuit substrate on which the semiconductor element is mounted. The ceramic circuit substrate includes a ceramic substrate having one surface and the other surface facing each other, a metal circuit board joined to the one surface of the ceramic substrate and electrically connected to the semiconductor element, and a metal heat-dissipation plate joined to the other surface of the ceramic substrate. The metal circuit board is greater in thickness than the metal heat-dissipation plate. A surface of the metal heat-dissipation plate on a side opposite to the ceramic substrate is larger in area than a surface of the metal circuit board on a side opposite to the ceramic substrate. Thereby, a semiconductor device capable of suppressing warpage of the ceramic substrate can be achieved.Type: ApplicationFiled: April 15, 2015Publication date: March 31, 2016Applicant: MITSUBISHI ELECTRIC CORPORATIONInventors: Yoshitaka OTSUBO, Takuya TAKAHASHI, Masaomi MIYAZAWA, Tetsuo YAMASHITA, Tomohiro HIEDA, Mituharu TABATA