Abstract: A driver support system includes a processor that acquires a heart rate of a target person; evaluates a health condition of the target person based on the heart rate of the target person; and performs an operation setting of a moving object into which the target person gets as a driver. The processor evaluates the health condition of the target person based on an ordinary heart rate, which is a heart rate of the target person during an ordinary period, and a pre-driving heart rate which is a heart rate of the target person when the target person arrives at the moving object, performs the operation setting of the moving object based on a result of the health condition of the target person evaluated when the target person gets into the moving object as a driver.

Abstract: Provided is a health evaluation system that includes: an acquisition unit that acquires a blood pressure value of a target person; and an evaluation unit that evaluates a health condition of the target person based on the acquired blood pressure value. The evaluation unit evaluates the health condition of the target person based on: a standing-state blood pressure value that is a blood pressure value measured when the target person is heading toward a moving body in a standing state; and a seated-state blood pressure value that is a blood pressure value of the target person measured after boarding the moving body and seated on a seat.

Abstract: A health assessment system includes a processor that acquires biometric measurement data measured by a wearable terminal worn by a target person, the biometric measurement data being biometric data of the target person; generates complementary biometric data for complementing the biometric measurement data in a missing period in which the acquisition unit is not able to acquire the biometric measurement data from the wearable terminal; and assesses a health condition of the target person based on the biometric measurement data and the complementary biometric data, the processor acquires exercise information, which is information about exercise of the target person, from a mobile terminal carried by the target person, generates the complementary biometric data in the missing period, based on the exercise information of the target person which is obtained from the mobile terminal.

Abstract: A driver support system includes: an acquisition unit that acquires biometric data of a driver of a moving object; an evaluation unit that evaluates a health condition of the driver; and an interactive response unit that executes an interaction operation for interactive response with the driver using an HMI device mounted on the moving object, the evaluation unit being configured to; when estimating based on the biometric data for the driver that the health condition of the driver is poor, instruct the interactive response unit to execute the interaction operation, thereby acquiring a response input, which is a response of the driver to a response facilitating output that facilitates the driver to respond in the interaction operation; and determine the health condition of the driver based on a degree of suitability of the response input to the response facilitating output.

Abstract: A navigation system includes an evaluation unit for evaluating a degree of a health state quality for a driver of a moving body, and a route guidance unit for searching a route from a current position of the moving body to a destination, and for performing guidance of the searched route, the route guidance unit determines a search condition of a route to the destination based on an evaluation result of a health state of the driver in the evaluation unit.

Abstract: An IGBT capable of handling high-speed switching while reducing a leakage current of a semiconductor device including the IGBT is provided. The semiconductor device according to one embodiment includes an IGBT including a p-type collector layer on a back surface of a silicon substrate and a dislocation suppressing layer for forming a hetero junction with silicon in the p-type collector layer. The dislocation suppressing layer includes a silicon germanium (SiGe) layer.

Abstract: An IGBT capable of handling high-speed switching while reducing a leakage current of a semiconductor device including the IGBT is provided. The semiconductor device according to one embodiment includes an IGBT including a p-type collector layer on a back surface of a silicon substrate and a dislocation suppressing layer for forming a hetero junction with silicon in the p-type collector layer. The dislocation suppressing layer includes a silicon germanium (SiGe) layer.

Abstract: A gate electrode is formed inside a trench via a gate insulating film. The gate insulating film formed on a semiconductor substrate is removed. An insulating film is formed on the semiconductor substrate. A p-type base region is formed in the semiconductor substrate. An n-type emitter region is formed in the base region. Hydrogen annealing process is performed to the semiconductor substrate. A boundary between the base region and the emitter region is located at a position deeper than the insulating film formed between a side surface of the trench and the gate insulating film.

Abstract: An interlayer insulating film includes a first insulating film formed on a semiconductor layer and a second insulating film formed on the first insulating film. The first insulating film is a silicon oxide film and the second insulating film is a BPSG film. A thickness of the second insulating film is larger than a thickness of the first insulating film. A contact hole is formed of a first contact hole and a second contact hole. The first contact hole penetrates an emitter region and reaches a base region. The second contact hole is formed in the first insulating film and the second insulating and communicates with the first contact hole. An opening width of the second contact hole is larger than an opening width of the first contact hole.

Abstract: An arousal state estimation apparatus includes: a feature value acquisition unit acquiring a plurality of types of feature values regarding an arousal state of a human body from physiological data obtained by measuring the human body; and an estimation unit estimating the arousal state of the human body by using a principal feature value that is some type among the plurality of types of feature values. In a case where the principal feature value is unacquirable due to a defect of the physiological data, the estimation unit estimates the arousal state of the human body by using a different type of feature value than the principal feature value among the plurality of types of feature values acquired by the feature value acquisition unit instead of the unacquirable principal feature value.

Abstract: A storage apparatus includes: a display room 4 having an opening 4A open to the front and capable of storing an article inside; an input unit into which specified information associated with the article is inputted; and a control unit that associates the display room 4 with the specified information, and the control unit cancels the associated relation between the display room 4 and the specified information in a case in which a specified time has elapsed since the control unit received a specified signal.

Abstract: A semiconductor device according to one embodiment includes an IGBT having a p-type collector layer and an n-type field stop layer on a back surface of a silicon substrate. The n-type field stop layer is selectively provided on an upper side of the p-type collector layer such that a first end portion of the n-type field stop layer is separated from a first side surface of the silicon substrate by a predetermined distance, and an n-type drift layer is provided between the first side surface of the silicon substrate and the first end portion of the n-type field stop layer. An impurity concentration of the n-type drift layer is lower than an impurity concentration of the n-type field stop layer.

Abstract: An IGBT capable of handling high-speed switching while reducing a leakage current of a semiconductor device including the IGBT is provided. The semiconductor device according to one embodiment includes an IGBT including a p-type collector layer on a back surface of a silicon substrate and a dislocation suppressing layer for forming a hetero junction with silicon in the p-type collector layer. The dislocation suppressing layer includes a silicon germanium (SiGe) layer.

Abstract: A probe card board in the present disclosure includes a plurality of through holes designed to receive a probe brought into contact with a measurement object. The probe card board is composed of silicon nitride based ceramics. The probe card board includes a first surface opposed to the measurement object and a second surface located opposite to the first surface. The probe card board contains a plurality of crystal phases of metal silicide. Metal constituting the metal silicide is at least one kind selected from among molybdenum, chrome, iron, nickel, manganese, vanadium, niobium, tantalum, cobalt and tungsten.

Abstract: An IGBT with improved switching characteristics is disclosed. The contact hole CH1 in which the emitter potential electrode EE is buried is formed at a position overlapping with the trench T 1 in which the gate electrode G 1 is buried in plan view. The upper surface of gate electrode G1 in trench T1 is retracted, and an interlayer insulating film IL2 is formed on the top of trench T1. Since the bottom of the contact hole CH1 is located on the interlayer insulating film IL2 in the trench T 1 and in the base region PB, the emitter potential electrode EE is not in contact with the gate electrode G 1.

Abstract: An arousal state estimation apparatus includes: a feature value acquisition unit acquiring a plurality of types of feature values regarding an arousal state of a human body from physiological data obtained by measuring the human body; and an estimation unit estimating the arousal state of the human body by using a principal feature value that is some type among the plurality of types of feature values. In a case where the principal feature value is unacquirable due to a defect of the physiological data, the estimation unit estimates the arousal state of the human body by using a different type of feature value than the principal feature value among the plurality of types of feature values acquired by the feature value acquisition unit instead of the unacquirable principal feature value.

Abstract: A state determination apparatus includes: an acquisition unit acquiring first questionnaire information indicating an answer to a first questionnaire in which the answer does not indicate an individuality of an answerer, first physiological information indicating a physiological state of the answerer, second questionnaire information indicating an answer to a second questionnaire in which the answer indicates an individuality of the answerer, and second physiological information indicating a physiological state of the answerer; a membership cluster estimation unit estimating to which cluster a determination target person belongs on the basis of the second physiological information or the second questionnaire information provided by the target person, and a membership condition; and a state determination unit determining a state of the target person on the basis of state relationship information indicating a relationship between the first questionnaire information and the first physiological information in a c

Abstract: An IGBT with improved switching characteristics is disclosed. The contact hole CH1 in which the emitter potential electrode EE is buried is formed at a position overlapping with the trench T 1 in which the gate electrode G 1 is buried in plan view. The upper surface of gate electrode G1 in trench T1 is retracted, and an interlayer insulating film IL2 is formed on the top of trench T1. Since the bottom of the contact hole CH1 is located on the interlayer insulating film IL2 in the trench T 1 and in the base region PB, the emitter potential electrode EE is not in contact with the gate electrode G 1.

Abstract: A probe card board in the present disclosure includes a plurality of through holes designed to receive a probe brought into contact with a measurement object. The probe card board is composed of silicon nitride based ceramics. The probe card board includes a first surface opposed to the measurement object and a second surface located opposite to the first surface. The probe card board contains a plurality of crystal phases of metal silicide. Metal constituting the metal silicide is at least one kind selected from among molybdenum, chrome, iron, nickel, manganese, vanadium, niobium, tantalum, cobalt and tungsten.

Abstract: An object of the present invention is to obtain a fermentative yeast having a highly efficient ethanol production without introducing a foreign gene. A further object is to obtain a fermentative yeast that is resistant to proliferation inhibitors such as organic acids, which prevent the proliferation of the fermentative yeast. A yeast having an improved ethanol production ability was generated by introducing transaldolase and alcohol dehydrogenase genes by self-cloning to Meyerozyma guilliermondii that can produce ethanol effectively from pentose and hexose obtained by breeding, and further breeding the resultant yeast.