Abstract: A solid-state image sensor including a semiconductor substrate having photoelectric conversion elements being two-dimensionally formed therein, and a color filter layer formed on the semiconductor substrate and having color filters of colors being two-dimensionally formed therein in a pattern such that the color filters correspond respectively to the photoelectric conversion elements. The color filter layer satisfies formulas (1) and (2): 200?A?700??(1) C?A+200??(2) where A represents a thickness in nm of a first-color color filter of a first color among the colors, and C represents a thickness in nm of color filters of colors other than the first color.

Abstract: A method of producing a color filter includes applying, on a semiconductor substrate, a first color filter material including a first resin dispersion including a first pigment and a resin material, curing the first color filter material such that a first color filter film is formed and serves as a precursor of a first color filter including the first pigment, forming a photosensitive resin mask material layer on the first color filter film, forming openings by photolithography in portions of the photosensitive resin mask material layer such that second and subsequent color filters including pigments of colors different from the first pigment are to be formed in the openings, and that portions of the first color filter film are exposed by the openings, dry-etching the portions of the first color filter film by using a dry etching gas and the photosensitive resin mask material layer as an etching mask, removing the etching mask such that the first color filter is formed, and forming the second and subsequent c

Abstract: A thermosetting coloring composition for manufacturing a color filter for a solid-state imaging element provided with a colored pattern formed by patterning a colored layer by dry etching is provided. The composition contains a pigment (A), a dispersant (B), a thermosetting compound (C), and a solvent (D). A ratio of the pigment (A) to a total solid content of the thermosetting coloring composition is 50 mass percent or more. The dispersant (B) contains a dispersant (b1) having an acidic functional group and/or a dispersant (b2) having a basic functional group. The thermosetting compound (C) contains a glycidyl therified epoxy compound of sorbitol.

Abstract: A solid-state imaging device including a semiconductor substrate having photoelectric conversion elements, a color filter layer having color filters of multiple colors, a partition wall, and a transparent resin layer. A thickness A of a color filter of a first color, a thickness B of the transparent resin layer, a thickness C of a color filter of a color other than the first color, a visible light transmittance D of the transparent resin layer, and a dimension E of the partition wall satisfy formulas (1) to (5): 200 nm?A?700 nm??(1); 0 nm<B?200 nm??(2); A+B?200 nm?C?A+B+200 nm??(3); D?90%??(4); and E?200 nm??(5).

Abstract: A solid-state image sensor including a semiconductor substrate having photoelectric conversion elements being two-dimensionally formed therein, and a color filter layer formed on the semiconductor substrate and having color filters of colors being two-dimensionally formed therein in a pattern such that the color filters correspond respectively to the photoelectric conversion elements. The color filter layer satisfies formulas (1) and (2): 200?A?700??(1) C?A+200??(2) where A represents a thickness in nm of a first-color color filter of a first color among the colors, and C represents a thickness in nm of color filters of colors other than the first color.

Abstract: There are provided a reflective mask and a reflective mask blank reducing reflection of out-of-band light and a manufacturing method therefor. A light shielding frame is formed on a mask region corresponding to a multiply exposed boundary region between a chip and a semiconductor substrate. The frame is provided with an antireflective layer causing surface reflection in antiphase to out-of-band light reflected from the surfaces of a rear-surface conductive film and the substrate to provide a reflective mask reducing reflection of out-of-band light. The antireflective layer of the present disclosure has an electrical conductivity of 1×104/m? or greater to minimize charging occurring in a pattern region in observing the region using an electron microscope.

Abstract: A thermosetting coloring composition for manufacturing a color filter for a solid-state imaging element provided with a colored pattern formed by patterning a colored layer by dry etching is provided. The composition contains a pigment (A), a dispersant (B), a thermosetting compound (C), and a solvent (D). A ratio of the pigment (A) to a total solid content of the thermosetting coloring composition is 50 mass percent or more. The dispersant (B) contains a dispersant (b1) having an acidic functional group and/or a dispersant (b2) having a basic functional group. The thermosetting compound (C) contains a glycidyl etherified epoxy compound of sorbitol.

Abstract: A method of producing a color filter includes applying, on a semiconductor substrate, a first color filter material including a first resin dispersion including a first pigment and a resin material, curing the first color filter material such that a first color filter film is formed and serves as a precursor of a first color filter including the first pigment, forming a photosensitive resin mask material layer on the first color filter film, forming openings by photolithography in portions of the photosensitive resin mask material layer such that second and subsequent color filters including pigments of colors different from the first pigment are to be formed in the openings, and that portions of the first color filter film are exposed by the openings, dry-etching the portions of the first color filter film by using a dry etching gas and the photosensitive resin mask material layer as an etching mask, removing the etching mask such that the first color filter is formed, and forming the second and subsequent c

Abstract: A reflective photomask includes: a substrate; a multilayer reflection film formed on the substrate and reflecting exposure light including light with a wavelength of about 5 nm to 15 nm for lithography; an absorption film formed on the multilayer reflection film and absorbing the exposure light, and formed therein with a circuit pattern or a circuit pattern forming region where the circuit pattern is formed; a shading region formed by removing part of the multilayer reflection film and the absorption film on the substrate, on an outer peripheral side of the circuit pattern or the circuit pattern forming region to shade part of the exposure light reflected by the multilayer reflection film; and a plurality of projections formed at a pitch of about 3000 nm or less on part of a surface of the substrate exposed in the shading region, and suppressing reflection of out-of-band light with a wavelength of about 140 nm to 800 nm included in the exposure light and incident on the shading region.

Abstract: There are provided a reflective mask and a reflective mask blank reducing reflection of out-of-band light and a manufacturing method therefor. A light shielding frame is formed on a mask region corresponding to a multiply exposed boundary region between a chip and a semiconductor substrate. The frame is provided with an antireflective layer causing surface reflection in antiphase to out-of-band light reflected from the surfaces of a rear-surface conductive film and the substrate to provide a reflective mask reducing reflection of out-of-band light. The antireflective layer of the present disclosure has an electrical conductivity of 1×104/m? or greater to minimize charging occurring in a pattern region in observing the region using an electron microscope.

Abstract: A reflective photomask includes: a substrate; a multilayer reflection film formed on the substrate and reflecting exposure light including light with a wavelength of about 5 nm to 15 nm for lithography; an absorption film formed on the multilayer reflection film and absorbing the exposure light, and formed therein with a circuit pattern or a circuit pattern forming region where the circuit pattern is formed; a shading region formed by removing part of the multilayer reflection film and the absorption film on the substrate, on an outer peripheral side of the circuit pattern or the circuit pattern forming region to shade part of the exposure light reflected by the multilayer reflection film; and a plurality of projections formed at a pitch of about 3000 nm or less on part of a surface of the substrate exposed in the shading region, and suppressing reflection of out-of-band light with a wavelength of about 140 nm to 800 nm included in the exposure light and incident on the shading region.