Abstract: A light-emitting element includes comb-shaped electrodes on a surface of a substrate made of a crystal containing a rare earth element as a light-emitting center. The comb-shaped electrodes are formed on a surface of zinc oxide thin films formed on the substrate.

Abstract: An electronic timepiece includes: a hand; a wheel corresponding to the hand and having a hole; a detector corresponding to the wheel, the detector being configured to detect light that passes through the hole of the wheel in response to voltage being applied to the detector and configured to output current corresponding to an intensity of the detected light; and a processor. The processor obtains, at a predetermined timing, a current-based value that is based on the current output by the detector. The processor determines whether or not the current-based value is greater than or equal to a predetermined threshold. Based on the determination, the processor performs position detection of the hand. The predetermined timing is earlier than a timing at which the current-based value, which is based on the current output by the detector, becomes a value in a steady state.

Abstract: Disclosed is an electronic timepiece including: a first light detector and a second light detector that detect external light; a first mechanism that limits an amount of the external light detected by the first light detector; and a second mechanism that limits an amount of the external light detected by the second light detector and has a different structure from a structure of the first mechanism.

Abstract: An electronic timepiece includes a plurality of hands; a plurality of detection units that detect external light, arranged corresponding to the plurality of hands; and a control unit, wherein the control unit is configured to perform external light detection operations that respectively determine whether or not external light of a threshold value or more is detected at the plurality of detection units while moving the plurality of hands by a predetermined distance, respectively, and when there is a hand among the plurality of hands for which the external light detection operation detected external light and there is another hand among the plurality of hands for which the external light detection operation did not detect external light, perform the external light detection operation for said another hand again.

Abstract: There is a manufacturing error even if an RGB coupler is appropriately designed, and thus a problem that it is difficult to achieve the function as designed with good yield arises. To solve this problem, an optical circuit with a first waveguide in which light in a zero-th order mode is guided and a second waveguide having a larger width than the first waveguide, in which light in a primary mode is guided in which the first and second waveguides at least include a first curved portion in a curve shape curved toward the first waveguide while maintaining a combination of waveguide widths satisfying mode conversion conditions is provided.

Abstract: In an embodiment method for growing a rare earth oxide crystal, a surface of a Si substrate is cleaned by carrying out treatments using chemical solutions such as a mixed sulfuric acid-hydrogen peroxide solution, hot nitric acid, or diluted hydrofluoric acid several times to remove impurities on the surface of the Si substrate. A silicon oxide layer including amorphous SiOx is formed on the Si substrate. A metal layer including a rare earth metal is formed in contact with an upper surface of the silicon oxide layer. The silicon oxide layer is reacted with the metal layer through heating to form a first crystal layer including a rare earth oxide crystal obtained by oxidizing the rare earth metal on the Si substrate.

Abstract: In an embodiment method for growing a rare earth oxide crystal, a surface of a Si substrate is cleaned by carrying out treatments using chemical solutions such as a mixed sulfuric acid-hydrogen peroxide solution, hot nitric acid, or diluted hydrofluoric acid several times to remove impurities on the surface of the Si substrate. A silicon oxide layer including amorphous SiOx is formed on the Si substrate. A metal layer including a rare earth metal is formed in contact with an upper surface of the silicon oxide layer. The silicon oxide layer is reacted with the metal layer through heating to form a first crystal layer including a rare earth oxide crystal obtained by oxidizing the rare earth metal on the Si substrate.

Abstract: There is a manufacturing error even if an RGB coupler is appropriately designed, and thus a problem that it is difficult to achieve the function as designed with good yield arises. To solve this problem, an optical circuit with a first waveguide in which light in a zero-th order mode is guided and a second waveguide having a larger width than the first waveguide, in which light in a primary mode is guided in which the first and second waveguides at least include a first curved portion in a curve shape curved toward the first waveguide while maintaining a combination of waveguide widths satisfying mode conversion conditions is provided.

Abstract: Provided is a technique for manufacturing a semiconductor light-emitting element for which it is possible to dramatically increase light emission efficiency to a greater degree than in the past. An AlInN film provided on a GaN epitaxial film that is formed on a substrate, wherein: the AlInN film is formed by lamination of AlInN layers; between the laminated AlInN layers, there is provided a cap layer that comprises GaN, AlN, or AlGaN, and has a thickness of 0.1-10 nm; a super lattice structure is formed; the total thickness exceeds 200 nm; and the root-mean-square height RMS is 3 nm or less. A method for forming an AlInN film, the method being such that: a step for forming an AlInN layer is repeated a plurality of times, said step involving using any of an organometallic vapor phase growth method, a molecular beam epitaxy method, and a sputtering method to form the AlInN layer to a thickness of 200 nm or less by epitaxial growth in an atmosphere of 700-850° C.

Abstract: Disclosed is a push button including: a module that has a fixed contact part which is able to contact and separate from a movable contact part; an elastically deformable dynamic contact member that is supported in a cantilever state with a base part fixed to the module, and that has the movable contact part electrically contactable with the fixed contact part; and an operation receiving member that makes the movable contact part contact the fixed contact part by having one end acting on an acting portion. The movable contact part is arranged out of (i) a line connecting the acting portion and the base part and (ii) an extended line thereof, the dynamic contact member has a first movable part and a second movable part, the acting portion is arranged in the first movable part, and the movable contact part is arranged in the second movable part.

Abstract: Disclosed is a push button including: a module that has a fixed contact part which is able to contact and separate from a movable contact part; an elastically deformable dynamic contact member that is supported in a cantilever state with a base part fixed to the module, and that has the movable contact part electrically contactable with the fixed contact part; and an operation receiving member that makes the movable contact part contact the fixed contact part by having one end acting on an acting portion. The movable contact part is arranged out of (i) a line connecting the acting portion and the base part and (ii) an extended line thereof, the dynamic contact member has a first movable part and a second movable part, the acting portion is arranged in the first movable part, and the movable contact part is arranged in the second movable part.

Abstract: Provided is a technique for manufacturing a semiconductor light-emitting element for which it is possible to dramatically increase light emission efficiency to a greater degree than in the past. An AlInN film provided on a GaN epitaxial film that is formed on a substrate, wherein: the AlInN film is formed by lamination of AlInN layers; between the laminated AlInN layers, there is provided a cap layer that comprises GaN, AlN, or AlGaN, and has a thickness of 0.1-10 nm; a super lattice structure is formed; the total thickness exceeds 200 nm; and the root-mean-square height RMS is 3 nm or less. A method for forming an AlInN film, the method being such that: a step for forming an AlInN layer is repeated a plurality of times, said step involving using any of an organometallic vapor phase growth method, a molecular beam epitaxy method, and a sputtering method to form the AlInN layer to a thickness of 200 nm or less by epitaxial growth in an atmosphere of 700-850° C.