Abstract: A semiconductor device includes a thin film transistor including: a substrate 1; a gate electrode 2 supported on the substrate 1; a semiconductor layer 4 provided on the gate electrode with a gate insulating layer 3 therebetween, wherein the semiconductor layer includes a first region Rs, a second region Rd, and a source-drain interval region SG that is located between the first region and the second region and overlaps with the gate electrode as seen from a direction normal to the substrate; a first contact layer Cs in contact with the first region and a second contact layer Cd in contact with the second region; a source electrode 8s electrically connected to the first region with the first contact layer therebetween; and a drain electrode 8d electrically connected to the second region with the second contact layer therebetween, wherein: the semiconductor layer includes a crystalline silicon region 4c, and at least a portion of the crystalline silicon region is located in the source-drain interval region SG;

Abstract: A semiconductor device includes a thin film transistor 101 including: a semiconductor layer 4 provided on a gate electrode 2 with a gate insulating layer 3 therebetween, wherein the semiconductor layer includes a first region Rs, a second region Rd, and a source-drain interval region RG that is located between the first region and the second region and overlaps with the gate electrode as seem from a direction normal to a substrate; a protection layer 5 arranged on the semiconductor layer 4; a first contact layer Cs in contact with the first region and a second contact layer Cd in contact with the second region; a source electrode 8s; and a drain electrode 8d, wherein: the semiconductor layer 4 includes a crystalline silicon region 4p, and at least a portion of the crystalline silicon region 4p is located in the source-drain interval region RG; and at least one opening 10 is provided that runs through the protection layer 5 and the semiconductor layer 4 and reaches the gate insulating layer 3, wherein the at l

Abstract: A thin film transistor (101) includes: a gate electrode (2) supported by a substrate (1); a gate insulating layer (3) covering the gate electrode; a semiconductor layer (4) being disposed on the gate insulating layer and including a polysilicon region (4p), the polysilicon region (4p) including a first region (Rs), a second region (Rd), and a channel region (Rc) that is located between the first region and the second region; a source electrode (8s) electrically connected to the first region; a drain electrode (8d) electrically connected to the second region; a protective insulating layer (5) disposed between the semiconductor layer and the source electrode and drain electrode; an i type semiconductor layer composed of an intrinsic semiconductor, the i type semiconductor layer being disposed between the protective insulating layer and the channel region so as to be directly in contact with a portion of the channel region; and a sidewall disposed on a side surface of the protective insulating layer.

Abstract: Provided are the following: a mixture of visible light-responsive photocatalytic titanium oxide fine particles which can conveniently produce a photocatalyst thin film that exhibits photocatalyst activity even with only visible light (400-800 nm) and that exhibits high transparency; a dispersion liquid of the fine particles; a method for producing the dispersion liquid; a photocatalyst thin film; and a member having the photocatalyst thin film on a surface thereof. The mixture of visible light-responsive photocatalytic titanium oxide fine particles is characterized by containing two kinds of titanium dioxide fine particles: first titanium oxide fine particles, in which a tin component and a transition metal component (excluding an iron group element component) that increases visible light response properties form a solid solution, and second titanium oxide fine particles, in which an iron group element component and a chromium group element component form a solid solution.

Abstract: In a rotary electric machine in which a controller and a heat sink are arranged in an extending direction of an output shaft of a motor, in order to provide a rotary electric machine which secures a heat rejection performance and an insulation performance of a semiconductor device to be mounted to the controller and is downsized as a whole, the controller includes a semiconductor device having a drive circuit provided so as to correspond to a stator winding of the motor, and the semiconductor device has a main face held in close contact with the heat sink. On a close contact face between the semiconductor device and the heat sink, a drive circuit is formed so as to extend along an outer edge portion of the heat sink to increase a cooling area.

Abstract: An ultrasonic cleaner according to the present invention includes a vibrating part 222 for enlarging ultrasonic vibration of a bolt-clamped Langevin type transducer (BLT) 100 on a side surface side in a cleaning tank 211, generates cavitation by the ultrasonic vibration with respect to cleaning liquid supplied into the cleaning tank 211 by driving the BLT 100 on the periphery of a nozzle without unevenness, and is capable of performing effective nozzle cleaning.

Abstract: Provided are a photocatalyst transfer film allowing a photocatalyst layer that is uniform, highly transparent, and exhibits an antimicrobial property in dark places to be transferred to the surfaces of various transfer base materials; and a production method thereof. The photocatalyst transfer film has, on a base film, a photocatalyst layer containing a titanium oxide particle-containing photocatalyst, antimicrobial metal-containing alloy particles, a silicon compound and a surfactant. The production method of the photocatalyst transfer film includes applying a photocatalyst coating liquid to a base film; and performing drying. The photocatalyst coating liquid contains a titanium oxide particle-containing photocatalyst, antimicrobial metal-containing alloy particles, a silicon compound, a surfactant and an aqueous dispersion medium.

Abstract: Provided are an interior material having a surface layer as a thin film with a high transparency and exhibiting deodorant and antimicrobial properties; and a production method thereof. The interior material has a surface layer containing (i) titanium oxide particles and (ii) antimicrobial metal-containing alloy particles. The interior material is such that an antimicrobial metal(s) contained in the (ii) antimicrobial metal-containing alloy particles is at least one kind of metal selected from the group consisting of silver, copper and zinc. The production method of the interior material of the present invention includes a step of applying a dispersion liquid containing the (i) titanium oxide particles and the (ii) antimicrobial metal-containing alloy particles to a surface of the interior material.

Abstract: Provided are a photocatalyst transfer film allowing a uniform and highly transparent photocatalyst layer to be transferred to the surfaces of various transfer base materials; and a production method thereof. The photocatalyst transfer film has, on a biaxially oriented polypropylene film, a photocatalyst layer containing a titanium oxide particle-containing photocatalyst, a silicon compound and a surfactant. The production method of the photocatalyst transfer film includes applying a photocatalyst coating liquid to a biaxially oriented polypropylene film; and performing drying. The photocatalyst coating liquid contains a titanium oxide particle-containing photocatalyst, a silicon compound, a surfactant and an aqueous dispersion medium.

Abstract: A laser annealing apparatus 100 includes a laser irradiation device 10 to emit a plurality of laser beams LB toward an irradiation region R1 of a stage 20, the laser irradiation device including: a laser device to emit a laser beam LA; and a convergence unit that includes a microlens array 34 having a plurality of microlenses 34A arranged in m rows and n columns and a mask 32 having a plurality of apertures 32A, the convergence unit 30 receiving the laser beam from the laser device to form respective convergence points of the plurality of laser beams within the irradiation region R1. The plurality of laser beams are p rows and q columns of laser beams formed by p rows and q columns of microlenses (p<m or q<n) among the m rows and n columns of microlenses.

Abstract: An ink set comprises black ink having a static surface tension A and yellow ink having a static surface tension B, wherein the static surface tension A is 28.7 mN/m or more and greater than the static surface tension B, wherein the ink set is used in an image forming device including an inkjet head including a nozzle plate including a first nozzle array and a second nozzle array disposed adjacent to the first nozzle array, the first nozzle array including multiple first nozzles configured to discharge the black ink and a second nozzle array including multiple second nozzles configured to discharge the yellow ink wherein each nozzle of the multiple first nozzles and the multiple second nozzles has a cylindrical portion having a length of 25 ?m or longer along an axial direction with an opening on an ink discharging side of the nozzle plate.

Abstract: An ultrasonic cleaner according to the present invention includes a vibrating part 222 for enlarging ultrasonic vibration of a BLT 100 on a side surface side in a cleaning tank 211, generates cavitation by the ultrasonic vibration with respect to cleaning liquid supplied into the cleaning tank 211 by driving the BLT 100 on the periphery of a nozzle without unevenness, and is capable of performing effective nozzle cleaning.

Abstract: A motor driving control device has a motor driving unit configured to supply a current to coils of a motor, and a control unit configured to control an operation of the motor driving unit in a vector control mode. The control unit includes a state signal output unit configured to output a pulse signal indicating a predetermined value corresponding to a state of the motor or a control state of the control unit among values generated in a process of calculation processing in the vector control mode.

Abstract: A toroidal continuously variable transmission includes a preload spring disposed between a rotary assembly including a first disc and a pressing device, and a driving force transmission shaft, and a thrust bearing disposed between a first member and the preload spring, the first member being one of the rotary assembly and the driving force transmission shaft. In a direction of an axis line, a gap is formed between a second member and the thrust bearing, the second member being the other of the rotary assembly and the driving force transmission shaft. A dimension of the gap in the direction of the axis line is less than a deformation amount of the preload spring in the direction of the axis line, at an elastic limit.

Abstract: A photocatalyst/alloy fine-particle dispersion containing two kinds of fine particles dispersed in an aqueous dispersion medium, (i) photocatalyst fine particles and (ii) alloy fine particles containing an antibacterial/antifungal metal, easily forms a photocatalyst/alloy fine-particle thin film of high transparency that exhibits antibacterial/antifungal properties regardless of the presence or absence of light irradiation.

Abstract: The present invention provides: an interior material having a surface layer which has visible light-responsive photocatalytic activity and which contains two types of titanium oxide microparticles, the two types of titanium oxide microparticles comprising first titanium oxide microparticles, in which a tin component and a transition metal component for enhancing visible light responsiveness (excluding iron group components) are in solid solution, and second titanium oxide microparticles, in which an iron group component is in solid solution; and a method for manufacturing the interior material.

Abstract: Provided is an ink containing at least: an inorganic pigment having a surface hydrophobicity; resin particles; and water.

Abstract: A semiconductor device includes a thin film transistor including: a substrate 1; a gate electrode 2 supported on the substrate 1; a semiconductor layer 4 provided on the gate electrode with a gate insulating layer 3 therebetween, wherein the semiconductor layer includes a first region Rs, a second region Rd, and a source-drain interval region SG that is located between the first region and the second region and overlaps with the gate electrode as seen from a direction normal to the substrate; a first contact layer Cs in contact with the first region and a second contact layer Cd in contact with the second region; a source electrode 8s electrically connected to the first region with the first contact layer therebetween; and a drain electrode 8d electrically connected to the second region with the second contact layer therebetween, wherein: the semiconductor layer includes a crystalline silicon region 4c, and at least a portion of the crystalline silicon region is located in the source-drain interval region SG;

Abstract: A semiconductor device includes a thin film transistor 101 including: a semiconductor layer 4 provided on a gate electrode 2 with a gate insulating layer 3 therebetween, wherein the semiconductor layer includes a first region Rs, a second region Rd, and a source-drain interval region RG that is located between the first region and the second region and overlaps with the gate electrode as seem from a direction normal to a substrate; a protection layer 5 arranged on the semiconductor layer 4; a first contact layer Cs in contact with the first region and a second contact layer Cd in contact with the second region; a source electrode 8s; and a drain electrode 8d, wherein: the semiconductor layer 4 includes a crystalline silicon region 4p, and at least a portion of the crystalline silicon region 4p is located in the source-drain interval region RG; and at least one opening 10 is provided that runs through the protection layer 5 and the semiconductor layer 4 and reaches the gate insulating layer 3, wherein the at l

Abstract: A liquid discharge apparatus includes a conveyance path, a liquid discharge head, and a drying device. A medium is to be conveyed on the conveyance path. The liquid discharge head discharges liquid onto the medium conveyed on the conveyance path. The conveyance path includes a switchback path and an ejection path. The switchback path switches back a conveyance direction of the medium onto which the liquid has been discharged. The ejection path conveys the medium onto which the liquid has been discharged to an ejection port. The drying device dries the medium both on the switchback path and on the ejection path.