Abstract: Provided is a metal oxide containing a brownmillerite-type manganese oxide represented by (Ca2-xAx)(MnyAlzE2-y-z)wO5+? (in the formula, A represents one or more alkaline earth metal elements other than Ca; E represents one or more 3d transition metal elements or earth metal elements other than Mn and Al; and x, y, z, ?, and w satisfy 0?x?2, 0<y?2, 0?z<2, 0<y+z?2, 0???0.5, and 0.8?w?1.2), wherein the metal oxide has a defect in a (020) plane of a crystal of the brownmillerite-type manganese oxide.

Abstract: There is provided a method of developing an exposed resist film formed on a surface of a substrate to form a resist pattern, which includes: rotating the substrate about a rotation axis that extends in a direction perpendicular to the surface of the substrate that is horizontally supported; supplying a developing solution through a discharge hole positioned above the substrate onto the resist film such that the developing solution is widely spread on a surface of the resist film; and positioning a wetted part having a surface that faces the surface of the substrate, above a preceding region in the surface of the substrate, the preceding region being a region to which the developing solution is preferentially supplied through the discharge hole.

Abstract: There is provided a substrate processing apparatus, including: a mounting table configured to mount a substrate with a pattern mask formed on the substrate inside a process container; a depressurization mechanism configured to perform a pressure-decreasing process of depressurizing an interior of the process container to have a pressure of 1 Pa or lower; a light irradiation mechanism configured to irradiate the substrate with a vacuum ultraviolet light after the interior of the process container is depressurized so that an internal pressure of the process container reaches a pressure of 1 Pa or lower; and a controller configured to output a control signal such that an average depressurization rate inside the process container performed by the depressurization mechanism becomes 250 Pa/sec or lower while the interior of the process container is depressurized from 10,000 Pa to 1 Pa.

Abstract: There is provided a method of developing an exposed resist film formed on a surface of a substrate to form a resist pattern, which includes: rotating the substrate about a rotation axis that extends in a direction perpendicular to the surface of the substrate that is horizontally supported; supplying a developing solution through a discharge hole positioned above the substrate onto the resist film such that the developing solution is widely spread on a surface of the resist film; and positioning a wetted part having a surface that faces the surface of the substrate, above a preceding region in the surface of the substrate, the preceding region being a region to which the developing solution is preferentially supplied through the discharge hole.

Abstract: There is provided a semiconductor device manufacturing method, including: a film forming process in which, by supplying a solution for modifying a surface layer of a resist to a target object having a resist pattern and allowing the solution to infiltrate into the resist, a film having elasticity and having no compatibility with the resist is formed in the surface layer of the resist; and a heating process in which the target object having the film formed thereon is heated.

Abstract: There is provided a substrate processing apparatus, including: a mounting table configured to mount a substrate with a pattern mask formed on the substrate inside a process container; a depressurization mechanism configured to perform a pressure-decreasing process of depressurizing an interior of the process container to have a pressure of 1 Pa or lower; a light irradiation mechanism configured to irradiate the substrate with a vacuum ultraviolet light after the interior of the process container is depressurized so that an internal pressure of the process container reaches a pressure of 1 Pa or lower; and a controller configured to output a control signal such that an average depressurization rate inside the process container performed by the depressurization mechanism becomes 250 Pa/sec or lower while the interior of the process container is depressurized from 10,000 Pa to 1 Pa.

Abstract: There is provided a method of developing an exposed resist film formed on a surface of a substrate to form a resist pattern, which includes: rotating the substrate about a rotation axis that extends in a direction perpendicular to the surface of the substrate that is horizontally supported; supplying a developing solution through a discharge hole positioned above the substrate onto the resist film such that the developing solution is widely spread on a surface of the resist film; and positioning a wetted part having a surface that faces the surface of the substrate, above a preceding region in the surface of the substrate, the preceding region being a region to which the developing solution is preferentially supplied through the discharge hole.

Abstract: A developing method for forming a resist film having a high uniformity of CD distribution. After exposure of a resist film on a substrate surface to form a resist pattern, the method includes sequential steps of: (A) supplying a developer to the rotating substrate; (B) reacting the resist film with the developer; and (C) removing the developer from the surface of the resist film to terminate the reaction of the resist film with the developer. In step (A), a liquid-contact nozzle, having an ejection orifice for the developer and a lower surface extending laterally from the ejection orifice and disposed opposite the resist film, is used. In step (C), the boundary between a reaction-terminated area of the surface of the resist film, and an in-progress reaction area of the surface of the resist film, is moved from the center toward the periphery of the resist film.

Abstract: A light irradiation apparatus includes: a rotary holding unit that rotates a substrate around a rotary axis while holding the substrate; a lighting unit positioned to face the rotary holding unit; a light shielding mask positioned between the rotary holding unit and the lighting unit, and widened along a direction orthogonal to the rotary axis; and a driving unit that linearly moves the lighting unit along the direction orthogonal to the rotary axis. The light shielding mask overlaps with the substrate when viewed in the direction of the rotary axis. The light shielding mask has an opening portion. An opening width of the opening portion at a side away from the rotary axis is larger than the opening with near the rotary axis. The lighting unit irradiates light through the opening portion toward the surface of the substrate while being moved above the opening portion by the driving unit.

Abstract: A developing method includes: forming a puddle of a developer on a surface of the substrate held by the substrate holding unit by a first developer nozzle; subsequently spreading the puddle of the developer over the whole substrate surface, by moving the first developer nozzle discharging the developer from a central or peripheral part to the peripheral or central part of the rotating substrate, with a contacting part of the first developer nozzle contacting with the puddle; supplying the developer from a second developer nozzle onto the rotating substrate, thereby to uniformize, in the substrate plane, distribution of a degree of progress of development by the developer spreading step; and removing the developer between the developer spreading step and the developer supplying step to remove the developer on the substrate.

Abstract: Disclosed is a bubble removing method in which fine bubbles are removed from a filter to improve the performance of the filter. The bubble removing method includes a step of degassing a processing liquid supplied from a supply source to prepare a highly degassed liquid (highly degassed liquid preparation), a step of supplying the prepared highly degassed liquid at a first processing liquid from a pump device to a filter device (temporary liquid permeation), a step of supplying the highly degassed liquid at a second processing liquid flow rate higher than the first processing liquid flow rate from the pump device to the filter device (initial liquid permeation), and a step of causing the highly degassed liquid to flow from the pump device to the filter device for a predetermined length of time (liquid permeation).

Abstract: There is provided a substrate processing method including: supplying a developing liquid to a surface of an exposed substrate to form a resist pattern; supplying a cleaning liquid to the surface of the substrate to remove a residue generated in the developing step from the substrate; supplying a replacing liquid to the surface of the substrate to replace the cleaning liquid existing on the substrate with the replacing liquid, the replacing liquid having a surface tension of 50 mN/m or less and containing a percolation inhibitor for restraining the replacing liquid from percolating into a resist wall portion constituting the resist pattern; and forming a dry region by supplying a gas to a central portion of the substrate while rotating the substrate so as to dry the surface of the substrate by expanding the dry region to a peripheral edge portion of the substrate with a centrifugal force.

Abstract: There is provided a semiconductor device manufacturing method, including: a film forming process in which, by supplying a solution for modifying a surface layer of a resist to a target object having a resist pattern and allowing the solution to infiltrate into the resist, a film having elasticity and having no compatibility with the resist is formed in the surface layer of the resist; and a heating process in which the target object having the film formed thereon is heated.

Abstract: A light irradiation apparatus includes: a rotary holding unit that rotates a substrate around a rotary axis while holding the substrate; a lighting unit positioned to face the rotary holding unit; a light shielding mask positioned between the rotary holding unit and the lighting unit, and widened along a direction orthogonal to the rotary axis; and a driving unit that linearly moves the lighting unit along the direction orthogonal to the rotary axis. The light shielding mask overlaps with the substrate when viewed in the direction of the rotary axis. The light shielding mask has an opening portion. An opening width of the opening portion at a side away from the rotary axis is larger than the opening with near the rotary axis. The lighting unit irradiates light through the opening portion toward the surface of the substrate while being moved above the opening portion by the driving unit.

Abstract: A developing method includes: forming a puddle of a developer on a surface of the substrate held by the substrate holding unit by a first developer nozzle; subsequently spreading the puddle of the developer over the whole substrate surface, by moving the first developer nozzle discharging the developer from a central or peripheral part to the peripheral or central part of the rotating substrate, with a contacting part of the first developer nozzle contacting with the puddle; supplying the developer from a second developer nozzle onto the rotating substrate, thereby to uniformize, in the substrate plane, distribution of a degree of progress of development by the developer spreading step; and removing the developer between the developer spreading step and the developer supplying step to remove the developer on the substrate.

Abstract: There is provided a semiconductor device manufacturing method, including: a film forming process in which, by supplying a solution for modifying a surface layer of a resist to a target object having a resist pattern and allowing the solution to infiltrate into the resist, a film having elasticity and having no compatibility with the resist is formed in the surface layer of the resist; and a heating process in which the target object having the film formed thereon is heated.

Abstract: There is provided a method of developing an exposed resist film formed on a surface of a substrate to form a resist pattern, which includes: rotating the substrate about a rotation axis that extends in a direction perpendicular to the surface of the substrate that is horizontally supported; supplying a developing solution through a discharge hole positioned above the substrate onto the resist film such that the developing solution is widely spread on a surface of the resist film; and positioning a wetted part having a surface that faces the surface of the substrate, above a preceding region in the surface of the substrate, the preceding region being a region to which the developing solution is preferentially supplied through the discharge hole.

Abstract: There is provided a developing method which can form a resist having a sufficiently high uniformity of CD distribution. The developing method for developing a resist film after exposure on a substrate surface to form a resist pattern, includes the sequential steps of: (A) supplying a developer to the rotating substrate; (B) reacting the resist film with the developer; and (C) removing the developer from the surface of the resist film to terminate the reaction of the resist film with the developer.

Abstract: Disclosed is a bubble removing method in which fine bubbles are removed from a filter to improve the performance of the filter. The bubble removing method includes a step of degassing a processing liquid supplied from a supply source to prepare a highly degassed liquid (highly degassed liquid preparation), a step of supplying the prepared highly degassed liquid at a first processing liquid from a pump device to a filter device (temporary liquid permeation), a step of supplying the highly degassed liquid at a second processing liquid flow rate higher than the first processing liquid flow rate from the pump device to the filter device (initial liquid permeation), and a step of causing the highly degassed liquid to flow from the pump device to the filter device for a predetermined length of time (liquid permeation).

Abstract: A pretreatment process, carried out prior to a developing process, spouts pure water, namely, a diffusion-assisting liquid for assisting the spread of a developer over the surface of a wafer, through a cleaning liquid spouting nozzle onto a central part of the wafer to form a puddle of pure water. The developer is spouted onto the central part of the wafer for prewetting while the wafer is rotated at a high rotating speed to spread the developer over the surface of the wafer. The developer dissolves the resist film partly and produces a solution. The rotation of the wafer is reversed, for example, within 7 s in which the solution is being produced to reduce the water-repellency of the wafer by spreading the solution over the entire surface of the wafer. Then, the developer is spouted onto the rotating wafer to spread the developer on the surface of the wafer.