Abstract: A cup holder includes a holder body, a supporter, an urger, and an inhibitor. The holder body has an accommodation space into which a container is inserted. The supporter is disposed rotatably to the holder body. The urger urges the supporter to rotate upward. The inhibitor is made of an elastic body, and inhibits the supporter from rotating upward and then retains the supporter at a standard position. The inhibitor has a retaining portion. The retaining portion of the inhibitor not only retains the supporter at the standard position by inhibiting the supporter from rotating upward by means of coming into contact with the supporter, but also enables the supporter to rotate more upward beyond the standard position when the supporter exerts a pressing force to the inhibitor to make the inhibitor undergo elastic deformation.

Abstract: A cup holder includes a holder body, an inner-peripheral-side supporting member, a first urging member, an outer-peripheral-side supporting member, and a second urging member. The holder body has an accommodation portion. The first urging member urges the inner-peripheral-side supporting member rotatably upward to a first datum position. The second urging member urges the outer-peripheral-side supporting member rotatably upward to a second datum position. The first rotary shaft-center of the inner-peripheral-side supporting member, which is located at the first datum position, being disposed at a position, which is displaced by a predetermined magnitude toward an imaginary center of the accommodation portion of the holder body with respect to the second rotary shaft-center of the outer-peripheral-side supporting member, which is located at the second datum position.

Abstract: A cup holder includes a holder body, an inner-peripheral-side supporting member, a first urging member, an outer-peripheral-side supporting member, and a second urging member. The holder body has an accommodation portion. The first urging member urges the inner-peripheral-side supporting member rotatably upward to a first datum position. The second urging member urges the outer-peripheral-side supporting member rotatably upward to a second datum position. The first rotary shaft-center of the inner-peripheral-side supporting member, which is located at the first datum position, being disposed at a position, which is displaced by a predetermined magnitude toward an imaginary center of the accommodation portion of the holder body with respect to the second rotary shaft-center of the outer-peripheral-side supporting member, which is located at the second datum position.

Abstract: An ultrasonic cleaning method for cleaning semiconductor manufacturing equipment with which a blast treated surface of a component of a sputtering equipment is cleaned, wherein de-aerated cleaning water in which the component is immersed has concentration of dissolved gasses of not more than 10 ppm, and ultrasonic power of the ultrasonic vibrator applying ultrasonic to the cleaning water is 50 W or more.

Abstract: A first polycide lead, which is formed on a silicon substrate, consists of a first doped polysilicon layer and a first tungsten silicide layer that is formed on the first doped polysilicon layer. An interlayer insulating film, which is formed on the silicon substrate, has an opening that reaches the first doped polysilicon layer. A second polycide lead, which is formed on the interlayer insulating film, consists of a second doped polysilicon layer that is connected to the first polycide lead in the opening and a second tungsten silicide layer that is formed on the second doped polysilicon layer. In the opening, the first and second doped polysilicon layers are in contact with each other at the side surfaces of the first polycide lead.

Abstract: A semiconductor device has a conductive interconnection layer formed on a semiconductor substrate covered with a protection insulation film. A pad electrode opening is provided in the protection insulation film so that the surface of the conductive interconnection layer is exposed in the region which becomes the pad electrode. The conductive interconnection layer is electrically connected to an external terminal by a bonding wire. At least the surface of the protection insulation film in the proximity of the pad electrode opening and the inner peripheral side face of the pad electrode opening are covered with an elastic insulation film. The pad electrode opening is covered with the bonding wire. Since the conductive interconnection layer is not exposed at the pad electrode opening according to this structure, the phenomenon of moisture intruding into the pad electrode opening to corrode the conductive interconnection layer is prevented to improve reliability.

Abstract: A semiconductor device has a conductive interconnection layer formed on a semiconductor substrate covered with a protection insulation film. A pad electrode opening is provided in the protection insulation film so that the surface of the conductive interconnection layer is exposed in the region which becomes the pad electrode. The conductive interconnection layer is electrically connected to an external terminal by a bonding wire. At least the surface of the protection insulation film in the proximity of the pad electrode opening and the inner peripheral side face of the pad electrode opening are covered with an elastic insulation film. The pad electrode opening is covered with the bonding wire. Since the conductive interconnection layer is not exposed at the pad electrode opening according to this structure, the phenomenon of moisture intruding into the pad electrode opening to corrode the conductive interconnection layer is prevented to improve reliability.

Abstract: In a multi-layer aluminum interconnection structure, improved reliability as well as a stable via-hole resistance are achieved by promoting mixing at an interface between aluminum interconnection layers and improving coverage of an upper aluminum interconnection layer at a connection hole. A first aluminum interconnection layer is electrically connected to a second aluminum interconnection layer through a connection hole. The second aluminum interconnection layer is provided with a titanium film, a titanium nitride film and aluminum alloy film. A connection hole is filled with a tungsten film. A tungsten film is formed on a surface of the first aluminum interconnection layer. The titanium film is in contact with the tungsten film through the connection hole.

Abstract: In a multi-layer aluminum interconnection structure, improved reliability as well as a stable via-hole resistance are achieved by promoting mixing at an interface between aluminum-containing interconnection layers and improving coverage of an upper aluminum interconnection layer at a connection hole. A first interconnection layer is electrically connected to a second interconnection layer through a connection hole. The second interconnection layer is provided with a titanium film, a titanium nitride film and aluminum alloy film. A connection hole is filled with a tungsten film. A tungsten film is formed on a surface of the first interconnection layer. The titanium film is in contact with the tungsten film through the connection hole.