Patents by Inventor Tomohiro Iwaida

Tomohiro Iwaida has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5804523
    Abstract: A sintered product of silicon nitride containing not smaller than 70 mol % of a .beta.-silicon nitride as well as an element of the Group 3a at least including Lu of periodic table and impurity oxygen, wherein when the content of the element of the Group 3a of periodic table and the content of the impurity oxygen are, respectively, expressed being reckoned as the amount of an oxide of the element of the Group 3a of periodic table (RE.sub.2 O.sub.3) and as the amount of SiO.sub.2 of impurity oxygen, their total amount is from 2 to 30 mol %, the molar ratio (SiO.sub.2 /RE.sub.2 O.sub.3) of the amount of the element of the Group 3a of periodic table reckoned as the oxide (RE.sub.2 O.sub.3) thereof to the amount of impurity oxygen reckoned as SiO.sub.2 is from 1.6 to 10, and the intergranular phase of the sintered product chiefly comprises a crystal phase consisting of the element of the Group 3a of periodic table, silicon and oxygen and a process for producing the same.
    Type: Grant
    Filed: May 9, 1997
    Date of Patent: September 8, 1998
    Assignee: Kyocera Corporation
    Inventors: Takehiro Oda, Koichi Tanaka, Tomohiro Iwaida, Sentaro Yamamoto, Shoji Kohsaka, Masahiro Sato, Hideki Uchimura, Kenichi Tajima