Abstract: A game device according to the present embodiment includes a camera as image pick-up means. An inner camera is accommodated in an upper housing. In addition, a microphone hole is provided in an inner surface of the upper housing so as to sense external sound through a microphone.

Abstract: There is obtained an ingot in which generation of crack is suppressed. The ingot includes: a seed substrate formed of silicon carbide; and a silicon carbide layer grown on the seed substrate. The silicon carbide layer has a thickness of 15 mm or more in a growth direction. When measuring a lattice constant in the silicon carbide layer at a plurality of measurement points in the growth direction, a difference between a maximum value of the lattice constant and a minimum value of the lattice constant is 0.004 nm or less. A distance between adjacent two points of the measurement points is 5 mm.

Abstract: Disclosed is a method for a repeated electroplating of a workpiece to be plated as a cathode by using an insoluble anode in a plating vessel accommodating a copper sulfate plating bath, wherein a copper dissolution vessel different from the plating vessel is provided, the plating bath is transferred to the copper dissolution vessel and is returned from the copper dissolution vessel to the plating vessel for circulating the plating bath between the plating vessel and the copper dissolution vessel, copper ion supplying salt is charged into the copper dissolution vessel and dissolved in the plating bath so that copper ions consumed by the plating can be replenished, and the workpiece to be plated is continuously electroplated, characterized in that the plating bath is permitted to transfer between the anode side and the cathode side, and the plating bath is returned to vicinity of the anode in the return of the plating bath from the copper dissolution vessel to the plating vessel.

Abstract: A group III nitride semiconductor crystal substrate has a diameter of at least 25 mm and not more than 160 mm. The resistivity of the group III nitride semiconductor crystal substrate is at least 1×10?4 ?·cm and not more than 0.1 ?·cm. The resistivity distribution in the diameter direction of the group III nitride semiconductor crystal is at least ?30% and not more than 30%. The resistivity distribution in the thickness direction of the group III nitride semiconductor crystal is at least ?16% and not more than 16%.

Abstract: A copper electroplating bath useful in filling non-through holes formed on a substrate which contains a water-soluble copper salt, sulfuric acid, and chloride ions and further contains a brightener, a carrier, and a leveler as additives, wherein the leveler contains at least one water-soluble polymer containing quaternary nitrogen, tertiary nitrogen, or both which are cationizable in a solution. In the copper electroplating bath, the filling power for non-through holes formed on a substrate can be easily controlled so as to fit to the size of the holes only by changing the quaternary nitrogen to tertiary nitrogen ratio of the water-soluble polymer to be used as the leveler, which enables copper electroplating of non-through holes of various sizes with a good fit to the sizes.

Abstract: An electrically conductive GaAs crystal has an atomic concentration of Si more than 1×1017 cm?3, wherein density of precipitates having sizes of at least 30 nm contained in the crystal is at most 400 cm?2. In this case, it is preferable that the conductive GaAs crystal has a dislocation density of at most 2×10?2 cm2 or at least 1×10?3 cm2.

Abstract: Provided is a system for helping an operator determine the target ion, collision energy and other analysis conditions. A chromatogram selected by an operator is displayed in a chromatogram display area of an MRM measurement parameter determination window. When the operator selects a point on this chromatogram, the name of a target compound which is registered in an event linked with a range of time including the selected point in time is displayed on a compound name display area. A plurality of mass spectra collected at that point in time are also displayed in a mass spectra display area in a vertically arranged form, using the same scale on the mass axis and the same scale on the intensity axis, with the scales of their mass axes aligned with each other in the vertical direction. The operator can then check whether the selected peak corresponds to the target compound.

Abstract: In processing chromatographic data, collected by performing a measurement for each of the segments which respectively define time ranges, a system determines whether there is any boundary sandwiched between two temporally continuous segments whose measurement modes are the same and which has the same m/z value designated by an operator to be displayed. If such a boundary exists, the measurement mode common to the two neighboring segments across that boundary is identified, and the system determines whether the parameter values corresponding to that measurement mode are the same. If they are the same, the partial chromatograms corresponding to the two segments show a temporal change in the intensity of the same kind of ion. Accordingly, the two neighboring measurement points across the boundary are connected by interpolation to create a chromatogram with no missing portion.

Abstract: Affords large-diametric-span AlN crystals, applicable to various types of semiconductor devices, with superior crystallinity, a method of growing the AlN crystals, and AlN crystal substrates. The AlN crystal growth method is a method in which an AlN crystal (4) is grown by vapor-phase epitaxy onto a seed crystal substrate (2) placed inside a crystal-growth compartment (24) within a crystal-growth vessel (12) provided within a reaction chamber, and is characterized in that during growth of the crystal, carbon-containing gas is supplied to the inside of the crystal-growth compartment (24).

Abstract: This III-nitride single-crystal growth method, being a method of growing a AlxGa1-xN single crystal (4) by sublimation, is furnished with a step of placing source material (1) in a crucible (12), and a step of sublimating the source material (1) to grow AlxGa1-xN (0<x?1) single crystal (4) in the crucible (12), with the AlyGa1-yN (0<y?1) source (2) and an impurity element (3), which is at least one selected from the group consisting of IVb elements and IIa elements, being included in the source material (1). This growth method makes it possible to stably grow bulk III-nitride single crystals of low dislocation density and of favorable crystallinity.

Abstract: Relates to a method of producing a semiconductor crystal having generation of a defect suppressed in the semiconductor single crystal. The production method includes the steps of: forming a boron oxide film on the inner wall of a growth container having a bottom section and a body section continuous to the bottom section; bringing the boron oxide film into contact with boron oxide melt containing silicon oxide to form a boron oxide film containing silicon oxide on the inner wall of the growth container; forming raw material melt above seed crystal placed in and on the bottom section of the growth container; and solidifying the raw material melt from the seed crystal side to grow a semiconductor single crystal.

Abstract: Affords methods of manufacturing bulk III-nitride crystals whereby at least the surface dislocation density is low globally. The present III-nitride crystal manufacturing method includes: a step of preparing an undersubstrate (1) containing a III-nitride seed crystal, the III-nitride seed crystal having a matrix (1s), and inversion domains (1t) in which the polarity in the <0001> directions is inverted with respect to the matrix (1s); and a step of growing a III-nitride crystal (10) onto the matrix (1s) and inversion domains (it) of the undersubstrate (1) by a liquid-phase technique; and is characterized in that a first region (10s), being where the growth rate of III-nitride crystal (10) growing onto the matrix (1s) is greater, covers second regions (10t), being where the growth rate of III-nitride crystal (10) growing onto the inversion domains (1t) is lesser.

Abstract: An icon line is displayed on a screen. A display order for the icon line can be changed by using a switch input unit enabling a direction input. When an input in a first direction is made, objects are scrolled so as to sequentially display each object at a specific position or the objects are scrolled across the specific position. When an input in the second direction is made, an object positioned at the specific position is saved at a saving position or an object positioned at the saving position is positioned at the specific position. Thus, a user is allowed to easily change the display order in which a plurality of objects are displayed on a screen.

Abstract: Disclosed is an electroless plating solution exhibiting a good plating metal filling performance even for larger trenches or vias of several to one hundred and tens of ?m, in a manner free from voids or seams, and allowing maintenance of stabilized performance for prolonged time. The electroless plating solution contains at least a water-soluble metal salt, a reducing agent for reducing metal ions derived from the water-soluble metal salt, and a chelating agent. In addition, the electroless plating solution contains a sulfur-based organic compound as a leveler having at least one aliphatic cyclic group or aromatic cyclic group to which may be linked at least one optional substituent. The aliphatic cyclic group or the aromatic cyclic group contains optional numbers of carbon atoms, oxygen atoms, phosphorus atoms, sulfur atoms and nitrogen atoms.

Abstract: A method of producing a semiconductor crystal is provided. The method includes the steps of preparing a longitudinal container with a seed crystal and an impurity-containing melt placed in a bottom section and with a suspension part arranged in an upper section and suspending a dropping raw material block made of a semiconductor material having an impurity concentration lower than the impurity concentration of the impurity-containing melt, and creating a temperature gradient in the longitudinal direction of the longitudinal container to melt the dropping raw material block, and solidifying the impurity-containing melt from the side that is in contact with the seed crystal (8) while dropping a produced melt into the impurity-containing melt, thereby producing a semiconductor crystal.

Abstract: An information processing apparatus capable of being opened and closed includes storage means, display means, and taken image display control means. The storage means stores a taken image therein. The display means has a display screen provided in a surface which is located inside when the information processing apparatus is closed and which is located outside when the information processing apparatus is opened. The taken image display control means displays a taken image on the display screen, and changes a taken image to be displayed between before and after closing and opening the information processing apparatus when the information processing apparatus is closed and opened again.

Abstract: Disclosed is an electroless plating solution exhibiting a good plating metal filling performance even for larger trenches or vias of several to one hundred and tens of ?m, in a manner free from voids or seams, and allowing maintenance of stabilized performance for prolonged time. The electroless plating solution contains at least a water-soluble metal salt, a reducing agent for reducing metal ions derived from the water-soluble metal salt, and a chelating agent. In addition, the electroless plating solution contains a sulfur-based organic compound as a leveler having at least one aliphatic cyclic group or aromatic cyclic group to which may be linked at least one optional substituent. The aliphatic cyclic group or the aromatic cyclic group contains optional numbers of carbon atoms, oxygen atoms, phosphorus atoms, sulfur atoms and nitrogen atoms.

Abstract: Disclosed is an electroless plating solution exhibiting a good plating metal filling performance even for larger trenches or vias of several to one hundred and tens of ?m, in a manner free from voids or seams, and allowing maintenance of stabilized performance for prolonged time. The electroless plating solution contains at least a water-soluble metal salt, a reducing agent for reducing metal ions derived from the water-soluble metal salt, and a chelating agent. In addition, the electroless plating solution contains a sulfur-based organic compound as a leveler having at least one aliphatic cyclic group or aromatic cyclic group to which may be linked at least one optional substituent. The aliphatic cyclic group or the aromatic cyclic group contains optional numbers of carbon atoms, oxygen atoms, phosphorus atoms, sulfur atoms and nitrogen atoms.

Abstract: An electrically conductive GaAs crystal has an atomic concentration of Si more than 1×1017 cm?3, wherein density of precipitates having sizes of at least 30 nm contained in the crystal is at most 400 cm?2. In this case, it is preferable that the conductive GaAs crystal has a dislocation density of at most 2×10?2 cm2 or at least 1×10?3 cm2.

Abstract: Affords methods of manufacturing bulk III-nitride crystals whereby at least the surface dislocation density is low globally. The present III-nitride crystal manufacturing method includes: a step of preparing an undersubstrate (1) containing a III-nitride seed crystal, the III-nitride seed crystal having a matrix (1s), and inversion domains (1t) in which the polarity in the <0001> directions is inverted with respect to the matrix (1s); and a step of growing a III-nitride crystal (10) onto the matrix (1s) and inversion domains (it) of the undersubstrate (1) by a liquid-phase technique; and is characterized in that a first region (10s), being where the growth rate of III-nitride crystal (10) growing onto the matrix (1s) is greater, covers second regions (10t), being where the growth rate of III-nitride crystal (10) growing onto the inversion domains (1t) is lesser.