Patents by Inventor Tomohiro MATSUMURA

Tomohiro MATSUMURA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240229241
    Abstract: A method for more easily improving adhesion of an yttrium-based thin film to an aluminum substrate in a coated aluminum member having the yttrium-based thin film formed on the aluminum substrate is provided. A method for improving adhesion of an yttrium-based thin film to an aluminum substrate in a coated aluminum member having the yttrium-based thin film formed on the aluminum substrate comprises a BHF treatment step of bringing a surface of the yttrium-based thin film into contact with a buffered hydrofluoric acid solution.
    Type: Application
    Filed: December 1, 2023
    Publication date: July 11, 2024
    Inventors: Yuriko YANAI, Yoshitaka OZAKI, Tomohiro MATSUMURA
  • Publication number: 20240133037
    Abstract: A method for more easily improving adhesion of an yttrium-based thin film to an aluminum substrate in a coated aluminum member having the yttrium-based thin film formed on the aluminum substrate is provided. A method for improving adhesion of an yttrium-based thin film to an aluminum substrate in a coated aluminum member having the yttrium-based thin film formed on the aluminum substrate comprises a BHF treatment step of bringing a surface of the yttrium-based thin film into contact with a buffered hydrofluoric acid solution.
    Type: Application
    Filed: December 1, 2023
    Publication date: April 25, 2024
    Inventors: Yuriko YANAI, Yoshitaka OZAKI, Tomohiro MATSUMURA
  • Patent number: 11753714
    Abstract: A method for cleaning a semiconductor fabrication equipment part having gas holes used in single-wafer type semiconductor fabrication equipment for processing semiconductor wafers, wherein the semiconductor fabrication equipment part having gas holes is formed of aluminum or an aluminum alloy, and has a distribution plate having a plurality of gas holes, the method including: a step (1) of scanning a gas injection surface of the distribution plate, which is a surface facing the wafer, with a laser beam; and a step (2) of bringing the gas injection surface and insides of the gas holes into contact with a cleaning liquid containing an inorganic acid.
    Type: Grant
    Filed: January 18, 2022
    Date of Patent: September 12, 2023
    Assignee: Shinryo Corporation
    Inventors: Tomohiro Matsumura, Akihiro Matsumoto
  • Publication number: 20220136101
    Abstract: A method for cleaning a semiconductor fabrication equipment part having gas holes used in single-wafer type semiconductor fabrication equipment for processing semiconductor wafers, wherein the semiconductor fabrication equipment part having gas holes is formed of aluminum or an aluminum alloy, and has a distribution plate having a plurality of gas holes, the method including: a step (1) of scanning a gas injection surface of the distribution place, which is a surface facing the wafer, with a laser beam; and a step (2) of bringing the gas injection surface and insides of the gas holes into contact with a cleaning liquid containing an inorganic acid.
    Type: Application
    Filed: January 18, 2022
    Publication date: May 5, 2022
    Applicant: Shinryo Corporation
    Inventors: Tomohiro MATSUMURA, Akihiro MATSUMOTO