Abstract: A simulation device is a device that simulates movement of a vehicle between a plurality of ports in a shared traffic service and includes a calculation unit that calculates a work time in a relocation port that is a port to be a target of relocation of the vehicle and simulates the relocation based on the work time.

Abstract: A population output device 1 includes a storage unit 11 that stores an estimation model that receives an input of area information related to an area and including information related to a population of the area and information related to a summation value, for each type of a map element, related to one or more map elements constituting map data of the area, and outputs population information related to a population estimated for each type of the map element of the area, an acquisition unit 10 that acquires the area information related to a target area that is an area to be targeted, and an output unit 13 that outputs the population information related to the target area, the population information being output by inputting the acquired area information related to the target area to the stored estimation model.

Abstract: Provided is a manufacturing method of a semiconductor device having a semiconductor substrate. The manufacturing method includes forming an interlayer insulating film above the semiconductor substrate; forming a metal electrode above the interlayer insulating film; acquiring an image of the metal electrode and detecting defect candidates on a surface of the metal electrode based on the image; and performing inspection by determining a quality of the semiconductor device, based on height information of each of the detected defect candidates in a direction perpendicular to the surface of the metal electrode.

Abstract: A user state determination device that can simply determine a location at which a user has fallen into a user state in which the user has lost an article or the like is provided. The user state determination device 100 includes: a user information acquiring unit 101 configured to acquire moving history information of a user; and a state determining unit 102 configured to determine that one spot (one location) serving as a start point of a predetermined moving pattern is likely to be a specific spot (a specific location) at which the user has fallen into a predetermined state (a state in which the user has lost an article) when the moving history information indicates the moving pattern. The predetermined state of a user refers to a state in which an article has been lost and is a state in which the user needs to perform a non-purposeful visit to the one spot (a visit to retrieve the lost article).

Abstract: A method of manufacturing a silicon carbide semiconductor device includes preparing a silicon carbide semiconductor substrate in which, on a front surface of a starting substrate of a first conductivity type, a first semiconductor layer of the first conductivity type is provided, the first semiconductor layer having an impurity concentration lower than an impurity concentration of the starting substrate. Next, at the surface of the first semiconductor layer, a second semiconductor layer of a second conductivity type is formed. Next, at the surface of the second semiconductor layer, an ohmic electrode is formed. Next, at the surface of the ohmic electrode, a Ti film and a TiN film are sequentially deposited to form a barrier metal. Next, the barrier metal is subjected to a heat treatment to form an annealed barrier metal. The heat treatment is performed in a range of 550 degrees C. to 750 degrees C.

Abstract: A silicon carbide semiconductor device has a semiconductor substrate, a trench gate structure disposed in the semiconductor substrate, a first electrode electrically connected to an impurity region and a bae layer of the semiconductor substrate, a second electrode connected to a substrate, and an interlayer insulating film disposed between a gate electrode and the first electrode. The trench gate structure includes a gate insulating film disposed in a trench of the semiconductor substrate and the gate electrode disposed on the gate insulating film. A portion of the semiconductor substrate adjoining the trench has a termination structure in which dangling bonds are terminated with at least one of nitrogen, hydrogen or phosphorous. The interlayer insulating film has a contact insulating film that is in contact with the gate electrode. The contact insulating film is provided by a deposited film.

Abstract: A method for manufacturing a semiconductor device includes: forming an insulating film on a surface of a semiconductor layer of a semiconductor substrate; forming a contact hole in the insulating film; forming a conductor material on the insulating film to be in contact with the semiconductor layer through the contact hole; and patterning the conductor material using an alignment key included in the conductor material.

Abstract: A simulation device is a device that simulates movement of a vehicle between a plurality of ports in a shared traffic service and includes a calculation unit that calculates a work time in a relocation port that is a port to be a target of relocation of the vehicle and simulates the relocation based on the work time.

Abstract: A population extraction device includes: a time-series population acquisition unit acquiring demographic data in daily time slots over a time period in a target area and acquiring a time-series population in a time slot each day by extracting a population at the same time slots from the demographic data in daily time slots; a clustering unit clustering the time-series population in a time slot each day into a plurality of classes based on fluctuation-similarity; a determination unit determining a class on a no-event day based on fluctuation in each class; a stationary population derivation unit deriving a time-series average population of the class on a no-event day as a time-series stationary population of a target area; and a population extraction unit extracting a difference between the time-series population on a target day in a target area and the time-series stationary population as an event-related population of the target area.

Abstract: Provided is a manufacturing method of a semiconductor device having a semiconductor substrate. The manufacturing method includes forming an interlayer insulating film above the semiconductor substrate; forming a metal electrode above the interlayer insulating film; acquiring an image of the metal electrode and detecting defect candidates on a surface of the metal electrode based on the image; and performing inspection by determining a quality of the semiconductor device, based on height information of each of the detected defect candidates in a direction perpendicular to the surface of the metal electrode.

Abstract: A method for manufacturing a semiconductor device includes: forming an insulating film on a surface of a semiconductor layer of a semiconductor substrate; forming a contact hole in the insulating film; forming a conductor material on the insulating film to be in contact with the semiconductor layer through the contact hole; and patterning the conductor material using an alignment key included in the conductor material.

Abstract: A semiconductor device includes: a drain region; a drift layer made of a first conductivity type semiconductor with lower impurity concentration than the drain region; a base region made of a second conductivity type semiconductor; a source region made of the first conductivity type semiconductor with higher concentration; a contact region made of the second conductivity type semiconductor with higher concentration; a trench structure having a first gate insulation film and a first gate electrode arranged at an opening side of the trench and to be deeper than the base region, and a bottom part insulation film; a source electrode electrically connected to the source and contact regions; and a drain electrode at a rear side of the drain region. The drain is arranged to be deeper than the base region. The first gate insulation film is made of higher dielectric insulation material than the bottom part insulation film.

Abstract: A semiconductor device includes: a drain region made of a first or second conductivity type semiconductors; a drift layer made of the first conductivity type semiconductor; a base region made of the second conductivity type semiconductor; a source region made of the first conductivity type semiconductor with higher concentration; a contact region made of the second conductivity semiconductor with higher concentration; a trench gate structure having upper and lower gate structures; a source electrode connected to the source and contact regions; and a drain electrode at a rear side of the drain region. The upper gate structure is inside the trench at an upper side, and includes a first gate insulation film and a first gate electrode. The lower gate structure is inside the trench at a lower side, and includes a second gate insulation film made of higher dielectric insulation material and a second gate electrode.

Abstract: A semiconductor device includes: a drain region made of a first or second conductivity type semiconductors; a drift layer made of the first conductivity type semiconductor; a base region made of the second conductivity type semiconductor; a source region made of the first conductivity type semiconductor with higher concentration; a contact region made of the second conductivity semiconductor with higher concentration; a trench gate structure having upper and lower gate structures; a source electrode connected to the source and contact regions; and a drain electrode at a rear side of the drain region. The upper gate structure is inside the trench at an upper side, and includes a first gate insulation film and a first gate electrode. The lower gate structure is inside the trench at a lower side, and includes a second gate insulation film made of higher dielectric insulation material and a second gate electrode.

Abstract: A semiconductor device includes: a drain region; a drift layer made of a first conductivity type semiconductor with lower impurity concentration than the drain region; a base region made of a second conductivity type semiconductor; a source region made of the first conductivity type semiconductor with higher concentration; a contact region made of the second conductivity type semiconductor with higher concentration; a trench structure having a first gate insulation film and a first gate electrode arranged at an opening side of the trench and to be deeper than the base region, and a bottom part insulation film; a source electrode electrically connected to the source and contact regions; and a drain electrode at a rear side of the drain region. The drain is arranged to be deeper than the base region. The first gate insulation film is made of higher dielectric insulation material than the bottom part insulation film.

Abstract: A carbon dioxide gas recovery device is provided which includes an absorption tower causing an absorbent to absorb carbon dioxide gas to generate a rich absorbent and a regeneration tower regenerating a lean absorbent by heating the rich absorbent to separate carbon dioxide gas therefrom. The regeneration tower includes a reboiler system heating the absorbent led out from the regeneration tower and reintroducing the heated absorbent into the regeneration tower and a mixed gas cooling system cooling a mixed gas led out from the regeneration tower, condensing a vapor fraction of a solute and a solvent, reintroducing the condensed vapor fraction into the regeneration tower, and discharging carbon dioxide gas. The carbon dioxide gas recovery device further includes a heat pump as a heat source of an endothermic reaction in which carbon dioxide gas is separated from the rich absorbent in the regeneration tower.

Abstract: In a semiconductor substrate preparation step, a semiconductor substrate which is made of SiC and in which a first semiconductor region of a first conductivity type is formed is prepared. In a second semiconductor region forming step, a second semiconductor region is formed by implanting an impurity of a second conductivity type into a first semiconductor region through multiple ion implantation steps while varying implantation depths of the respective multiple ion implantation steps. In the second semiconductor region forming step, a dose amount of the impurity when an implantation energy of multiple ion implantation steps is the largest is smaller than a dose amount of impurity when the implantation energy is not the largest.

Abstract: A carbon dioxide recovery method according to the present application includes a carbon dioxide absorption step of bringing an absorbing solution into contact with a gas to be treated including carbon dioxide to absorb the carbon dioxide in the gas to be treated, and a carbon dioxide separation step of heating the absorbing solution in which the carbon dioxide is absorbed to separate the carbon dioxide from the absorbing solution, wherein an aqueous amine solution having properties that a rate of change in an absorbed amount of carbon dioxide relative to a temperature change gradually decreases as the temperature increases in a heating temperature range in the carbon dioxide separation step is used as the absorbing solution, and the heating temperature of the absorbing solution in the carbon dioxide separation step is set to 87° C. to 100° C.

Abstract: In a semiconductor substrate preparation step, a semiconductor substrate which is made of SiC and in which a first semiconductor region of a first conductivity type is formed is prepared. In a second semiconductor region forming step, a second semiconductor region is formed by implanting an impurity of a second conductivity type into a first semiconductor region through multiple ion implantation steps while varying implantation depths of the respective multiple ion implantation steps. In the second semiconductor region forming step, a dose amount of the impurity when an implantation energy of multiple ion implantation steps is the largest is smaller than a dose amount of impurity when the implantation energy is not the largest.

Abstract: An SiC semiconductor device includes a substrate, a drift layer, a base region, a source region, a trench, a gate oxide film, a gate electrode, a source electrode and a drain electrode. The substrate has a Si-face as a main surface. The source region has the Si-face. The trench is provided from a surface of the source region to a portion deeper than the base region and extends longitudinally in one direction and has a Si-face bottom. The trench has an inverse tapered shape, which has a smaller width at an entrance portion than at a bottom, at least at a portion that is in contact with the base region.