Abstract: To provide a nitride semiconductor element having a better contact resistance reduction effect also in the case of a light emitting element containing AlGaN having a high Al composition. The nitride semiconductor element has a substrate 1, a first conductivity type first nitride semiconductor layer 2 formed on the substrate 1, and a first electrode layer 4 formed on the first nitride semiconductor layer 2. The first electrode layer 4 contains aluminum and nickel, and both aluminum and an alloy containing aluminum and nickel are present in a contact surface to the first nitride semiconductor layer 2 or in the vicinity of the contact surface.

Abstract: To provide a nitride semiconductor element having a better contact resistance reduction effect also in the case of a light emitting element containing AlGaN having a high Al composition. The nitride semiconductor element has a substrate 1, a first conductivity type first nitride semiconductor layer 2 formed on the substrate 1, and a first electrode layer 4 formed on the first nitride semiconductor layer 2. The first electrode layer 4 contains aluminum and nickel, and both aluminum and an alloy containing aluminum and nickel are present in a contact surface to the first nitride semiconductor layer 2 or in the vicinity of the contact surface.

Abstract: To provide a nitride semiconductor element having a better contact resistance reduction effect also in the case of a light emitting element containing AlGaN having a high Al composition. The nitride semiconductor element has a substrate 1, a first conductivity type first nitride semiconductor layer 2 formed on the substrate 1, and a first electrode layer 4 formed on the first nitride semiconductor layer 2. The first electrode layer 4 contains aluminum and nickel, and both aluminum and an alloy containing aluminum and nickel are present in a contact surface to the first nitride semiconductor layer 2 or in the vicinity of the contact surface.

Abstract: A nitride semiconductor substrate includes a sapphire substrate and a nitride semiconductor layer formed thereon and containing a group III element including Al and nitrogen as a main component. A surface of the sapphire substrate where the nitride semiconductor layer is formed includes recesses having a maximum opening size of from 2 nm to 60 nm in an amount of from 1×109 pieces to 1×1011 pieces per cm2. The recesses and surfaces immediately above the recesses form spaces. Of a surface of the nitride semiconductor layer on the sapphire substrate side, a height difference ?H between a surface immediately above of each recess and a surface in contact with a flat surface is 10 nm or less. A portion of the nitride semiconductor layer above each recess has a crystalline structure produced by growth along a polar plane of the group III element.

Abstract: In various embodiments, light-emitting devices incorporate graded layers with compositional offsets at one or both end points of the graded layer to promote formation of two-dimensional carrier gases and polarization doping, thereby enhancing device performance.

Abstract: A nitride semiconductor substrate includes a sapphire substrate and a nitride semiconductor layer formed thereon and containing a group III element including Al and nitrogen as a main component. A surface of the sapphire substrate where the nitride semiconductor layer is formed includes recesses having a maximum opening size of from 2 nm to 60 nm in an amount of from 1×109 pieces to 1×1011 pieces per cm2. The recesses and surfaces immediately above the recesses form spaces. Of a surface of the nitride semiconductor layer on the sapphire substrate side, a height difference ?H between a surface immediately above of each recess and a surface in contact with a flat surface is 10 nm or less. A portion of the nitride semiconductor layer above each recess has a crystalline structure produced by growth along a polar plane of the group III element.

Abstract: In various embodiments, light-emitting devices incorporate graded layers with compositional offsets at one or both end points of the graded layer to promote formation of two-dimensional carrier gases and polarization doping, thereby enhancing device performance.

Abstract: To provide a nitride semiconductor element having a better contact resistance reduction effect also in the case of a light emitting element containing AlGaN having a high Al composition. The nitride semiconductor element has a substrate 1, a first conductivity type first nitride semiconductor layer 2 formed on the substrate 1, and a first electrode layer 4 formed on the first nitride semiconductor layer 2. The first electrode layer 4 contains aluminum and nickel, and both aluminum and an alloy containing aluminum and nickel are present in a contact surface to the first nitride semiconductor layer 2 or in the vicinity of the contact surface.

Abstract: In various embodiments, light-emitting devices incorporate graded layers with compositional offsets at one or both end points of the graded layer to promote formation of two-dimensional carrier gases and polarization doping, thereby enhancing device performance.

Abstract: In various embodiments, light-emitting devices incorporate graded layers with compositional offsets at one or both end points of the graded layer to promote formation of two-dimensional carrier gases and polarization doping, thereby enhancing device performance.

Abstract: In various embodiments, light-emitting devices incorporate graded layers with compositional offsets at one or both end points of the graded layer to promote formation of two-dimensional carrier gases and polarization doping, thereby enhancing device performance.

Abstract: In various embodiments, light-emitting devices incorporate graded layers with compositional offsets at one or both end points of the graded layer to promote formation of two-dimensional carrier gases and polarization doping, thereby enhancing device performance.

Abstract: In various embodiments, light-emitting devices incorporate graded layers with compositional offsets at one or both end points of the graded layer to promote formation of two-dimensional carrier gases and polarization doping, thereby enhancing device performance.

Abstract: In various embodiments, light-emitting devices incorporate graded layers with compositional offsets at one or both end points of the graded layer to promote formation of two-dimensional carrier gases and polarization doping, thereby enhancing device performance.

Abstract: In various embodiments, light-emitting devices incorporate graded layers with compositional offsets at one or both end points of the graded layer to promote formation of two-dimensional carrier gases and polarization doping, thereby enhancing device performance.

Abstract: In various embodiments, light-emitting devices incorporate graded layers with compositional offsets at one or both end points of the graded layer to promote formation of two-dimensional carrier gases and polarization doping, thereby enhancing device performance.

Abstract: An apparatus for attaching a molding to the peripheral edge of an article such as a glazing used in an automobile. A molding having a groove in its one side is extruded from an extruder. The molding is guided so that the leading end of the molding contacts the edge of an article which is held by a robot. The groove of the molding is expanded by a guide section, and the edge of the glazing enters the groove thus expanded. The robot then rotates the glazing, while pressure is applied to the molding so that the molding adheres to the glazing. When the glazing is rotated one turn, the molding is cut. The molding may be heated from the side having the groove, and cooled from the opposite side having a lip. This facilitates the attachment of the molding without causing any deterioration of the shape of the lip.

Abstract: A ceramics binder mixture having from 4.3 to 7 parts by weight, as calculated as silica, of a silica-sol mixed to 100 parts by weight of a mixture comprising (1) from 25 to 60 parts by weight of cordierite aggregates prepared by melting and vitrifying a mixture of an approximate cordierite composition (2MgO.2Al.sub.2 O.sub.3.5%SiO.sub.2), followed by crystallization to cordierite, and having a particle size of from 0.1 to 1 mm, (2) from 6 to 17 parts by weight of a fine powder of silica having particle sizes of from 0.1 to 10 .mu.m, and (3) the rest being a powder composed mostly of cordierite particles and having particle sizes smaller than 0.1 mm, whereby the Na.sub.2 O content in the binder mixture excluding moisture is not higher than 0.3 wt %.

Abstract: A ceramic filter for a dust-containing gas, which comprises a filter base having an average pore size of from 20 to 100 .mu.m, and a filter layer having an average pore size of from 0.2 to 10 .mu.m fixed at least to the filtering side surface of the filter base so that the filter layer fills the pores open on the surface of the filter base.

Abstract: A ceramic filter for a dust-containing gas, which comprises a filter base having an average pore size of from 10 to 100 .mu.m, with the pore size ratio at positions of 75 vol % and 25 vol % of the accumulated pore size distribution being at least 1.3, and a filter layer having an average pore size of from 0.2 to 10 .mu.m fixed at least to the filtering side surface of the filter base so that the filter layer fills the pores open on the surface of the filter base.