Abstract: A liquid discharge head includes a liquid discharge substrate that has a discharge-orifice row, pressure generating elements, and pressure chambers. The liquid discharge head discharges a liquid in a block-by-block manner using sequential driving. The discharge-orifice row is disposed so as to incline at an angle ?=Arctan (d1/d2) relative to a direction extending orthogonal to the conveyance direction of the medium, in which d1 (?m) is a disposition spacing of the discharge orifices in the discharge-orifice row in the conveyance direction and d2 (?m) is a disposition spacing of the discharge orifices in the discharge-orifice row in the direction orthogonal to the conveyance direction. A partition wall is formed between adjacent pressure chambers so as to separate the adjacent pressure chambers from each other. The partition wall has a communicating portion that communicates the adjacent pressure chambers with each other.

Abstract: On a surface of a portion of a front electrode exposed in an opening of a passivation film, a Ni-deposited film having high solder wettability is provided apart from the sidewalls of the opening of the passivation film. Metal wiring is soldered to the Ni-deposited film. The solder layer is formed only on the Ni-deposited film and thus, the solder layer and the passivation film do not contact each other. The front electrode contains Al and an entire area of the surface of the front electrode excluding the portion where the Ni-deposited film is formed is covered by a surface oxide film that is constituted by an aluminum oxide film formed by intentionally oxidizing the surface of the front electrode. The surface oxide film intervenes between the front electrode, the passivation film, and a sealant, whereby the adhesive strength of the passivation film and the sealant is increased.

Abstract: In an intermediate region between an active region and an edge termination region, on a front surface of a semiconductor substrate, a gate polysilicon wiring layer is provided via an insulating layer in which a gate insulating film and a field oxide film are stacked sequentially. An inner peripheral end of the field oxide film is positioned directly beneath the gate polysilicon wiring layer, which extends inward from the field oxide film and terminates on the gate insulating film. At the surface of the insulating layer directly beneath the gate polysilicon wiring layer, on the inner peripheral end of the field oxide film, a drop is formed by a difference in thickness due to whether the field oxide film is present. A distance from the drop to a contact hole of the active region is 21 ?m or less.

Abstract: A FLR structure is provided in an edge termination region as a voltage withstanding structure. The FLR structure is configured by multiple FLRs that concentrically surround a periphery of an active region. An impurity concentration of the FLRs is less than 1×1018/cm3 or preferably, may be in a range of 3×1017/cm3 to 9×1017/cm3. A thickness of each of the FLRs is in a range of 0.7 ?m to 1.1 ?m. A first interval between an innermost FLR and an outer peripheral pt-type region is at most about 1.2 ?m.

Abstract: A semiconductor device includes n-type drift layer, n-type current spreading layer having higher impurity concentration than the drift layer, p-type base region provided on top surface, p-type gate-bottom protection region located in the current spreading layer, having first bottom edge portion formed of curved surface, p-type base-bottom embedded region in contact with bottom surface of the base region, having second bottom edge portion formed of curved surface on side surface facing the gate-bottom protection region, being separated from the gate-bottom protection region, and insulated gate electrode structure provided in trench penetrating through the base region to reach the gate-bottom protection region. Bottom surface of the base-bottom embedded region is deeper than bottom surface of the gate-bottom protection region, and minimum value of curvature radius of the first bottom edge portion is larger than minimum value of curvature radius of the second bottom edge portion.

Abstract: A magnetic recording medium with a reduced average grain diameter and reduced grain diameter dispersion is provided. A magnetic recording medium having a magnetic property (magnetic anisotropy energy) applicable as a magnetic recording medium is provided. It is a magnetic recording medium containing a substrate, a grain diameter control layer, a first seed layer, a second seed layer, and a magnetic recording layer containing an ordered alloy in this order, in which the second seed layer is composed of crystal grains having TiN as a main component, and a grain boundary material having at least one or more selected from the group consisting of metal oxides and carbon as a main component.

Abstract: The invention provides a magnetic recording medium including a magnetic layer or a magnetic recording layer having a granular structure in which magnetic crystal grains are well separated from each other. The magnetic recording medium includes a substrate, a seed layer, and a magnetic recording layer, wherein the magnetic recording layer includes a first magnetic layer which is a continuous film consisting of an ordered alloy, and a second magnetic layer having a granular structure consisting of magnetic crystal grains consisting of an ordered alloy and a non-magnetic crystal grain boundary, and the seed layer consists of a material selected from the group consisting of an NaCl-type compound, a spinel-type compound, and a perovskite-type compound.

Abstract: The purpose of the present invention is to provide a magnetic recording medium having a stacked structure of a seed layer including (Mg1-xTix)O and a magnetic recording layer including an L10 ordered alloy, and having improved properties. The method for producing a magnetic recording layer according to the present invention includes the steps of: (1) preparing a substrate; (2) forming a seed layer including (Mg1-xTix)O onto the substrate; (3) plasma etching the seed layer in an atmosphere including inert gas; and (4) forming a magnetic recording layer including an ordered alloy onto the seed layer which has been subjected to the step (3).

Abstract: The purpose of the present invention is to provide a perpendicular magnetic recording medium which uses an Ru seed layer having a (002)-oriented hcp structure, and has a magnetic recording layer including a (001)-oriented L10 ordered alloy suitable to perpendicular magnetic recording. The magnetic recording medium of the present invention includes a substrate, a first seed layer containing Ru, a second seed layer containing ZnO, a third seed layer containing MgO, and a magnetic recording layer containing an ordered alloy, in this order, the first seed layer having the (002)-oriented hexagonal closest packed structure.

Abstract: The present invention aims at providing a magnetic recording medium that can lower a Curie temperature (Tc) of a magnetic material, without increasing an in-plane coercive force and lowering magnetic properties. The magnetic recording medium is a magnetic recording medium comprising a substrate and a magnetic recording layer, the magnetic recording layer comprising an FePtRh ordered alloy, wherein a Rh content in the FePtRh ordered alloy is 10 at % or less.

Abstract: The purpose of the present invention is to provide a magnetic recording medium capable of reducing the surface roughness of the magnetic recording layer without adversely affecting the magnetic properties of the magnetic recording layer. The magnetic recording medium of the present invention includes a substrate, a seed layer on the substrate, and a magnetic recording layer on the seed layer, wherein the seed layer has a structure of: (a) a spinel structure consisting of Mg, Cr and O; (b) a spinel structure consisting of Zn, Fe and O; or (c) an inverse spinel structure consisting of Mg, Ti and O.

Abstract: The present invention relates to a magnetic recording medium, and this magnetic recording medium includes at least a non-magnetic substrate and a magnetic recording layer. In the magnetic recording medium of the present invention, the magnetic recording layer includes an ordered alloy having an L10-ordered structure, includes Fe, Pt, and V, and has a composition of Pt>Fe. The magnetic recording layer preferably has a granular structure composed of magnetic crystal grains including the ordered alloy and a non-magnetic crystal grain boundary, and the non-magnetic crystal grain boundary includes V.

Abstract: A magnetic recording medium with a reduced average grain diameter and reduced grain diameter dispersion is provided. A magnetic recording medium having a magnetic property (magnetic anisotropy energy) applicable as a magnetic recording medium is provided. It is a magnetic recording medium containing a substrate, a grain diameter control layer, a first seed layer, a second seed layer, and a magnetic recording layer containing an ordered alloy in this order, in which the second seed layer is composed of crystal grains having TiN as a main component, and a grain boundary material having at least one or more selected from the group consisting of metal oxides and carbon as a main component.

Abstract: The purpose of the invention is to provide a magnetic recording medium in which the surface roughness of the magnetic recording layer can be reduced without deterioration of the magnetic properties of the magnetic recording layer. The magnetic recording medium of the present invention includes a substrate, a seed layer on the substrate, and a magnetic recording layer on the seed layer, wherein the seed layer contains Mn, Cr, and O, and has a spinel structure.

Abstract: A magnetic recording medium is provided that includes, in the order recited, a substrate; a first seed layer; a second seed layer containing ZnO; a third seed layer containing MgO; and a magnetic recording layer containing an ordered alloy. The first seed layer contains Ru and at least one material selected from the group consisting of oxides, carbides, and nitrides. Employing seed layers enables the magnetic recording medium to be a perpendicular magnetic recording medium by having the magnetic recording layer contain an ordered alloy suitable for perpendicular magnetic recording. Recording density is improved thereby while ensuring required thermal stability. Further, the invention achieves an increased thickness of the magnetic layer and a reduced grain size.

Abstract: The present invention provides a magnetic recording layer that has a high magnetic anisotropy constant Ku and a low Curie temperature Tc, as well as a magnetic recording medium that incorporates such a magnetic recording layer. The magnetic recording medium of the present invention includes a nonmagnetic substrate and a magnetic recording layer containing an ordered alloy. The ordered alloy may contain at least one element selected from the group consisting of Fe and Ni; at least one element selected from the group consisting of Pt, Pd, Au, Rh and Ir; and Ru.

Abstract: The invention provides a magnetic recording medium including a magnetic layer or a magnetic recording layer having a granular structure in which magnetic crystal grains are well separated from each other. The magnetic recording medium includes a substrate, a seed layer, and a magnetic recording layer, wherein the magnetic recording layer includes a first magnetic layer which is a continuous film consisting of an ordered alloy, and a second magnetic layer having a granular structure consisting of magnetic crystal grains consisting of an ordered alloy and a non-magnetic crystal grain boundary, and the seed layer consists of a material selected from the group consisting of an NaCl-type compound, a spinel-type compound, and a perovskite-type compound.

Abstract: The purpose of the present invention is to provide a perpendicular magnetic recording medium which uses an Ru seed layer having a (002)-oriented hcp structure, and has a magnetic recording layer including a (001)-oriented L10 ordered alloy suitable to perpendicular magnetic recording. The magnetic recording medium of the present invention includes a substrate, a first seed layer containing Ru, a second seed layer containing ZnO, a third seed layer containing MgO, and a magnetic recording layer containing an ordered alloy, in this order, the first seed layer having the (002)-oriented hexagonal closest packed structure.

Abstract: A magnetic recording medium is provided that includes, in the order recited, a substrate; a first seed layer; a second seed layer containing ZnO; a third seed layer containing MgO; and a magnetic recording layer containing an ordered alloy. The first seed layer contains Ru and at least one material selected from the group consisting of oxides, carbides, and nitrides. Employing seed layers enables the magnetic recording medium to be a perpendicular magnetic recording medium by having the magnetic recording layer contain an ordered alloy suitable for perpendicular magnetic recording. Recording density is improved thereby while ensuring required thermal stability. Further, the invention achieves an increased thickness of the magnetic layer and a reduced grain size.

Abstract: The purpose of the present invention is to provide a magnetic recording medium having a stacked structure of a seed layer including (Mg1-xTix)O and a magnetic recording layer including an L10 ordered alloy, and having improved properties. The method for producing a magnetic recording layer according to the present invention includes the steps of: (1) preparing a substrate; (2) forming a seed layer including (Mg1-xTix)O onto the substrate; (3) plasma etching the seed layer in an atmosphere including inert gas; and (4) forming a magnetic recording layer including an ordered alloy onto the seed layer which has been subjected to the step (3).