Abstract: A temporary protective film comprising a support film and an adhesive layer provided on one surface or both surfaces of the support film is disclosed. The coefficient of linear expansion at 30° C. to 200° C. of the temporary protective film may be greater than or equal to 16 ppm/° C. and less than or equal to 20 ppm/° C. in at least one in-plane direction of the temporary protective film.

Abstract: A temporary protective film for semiconductor sealing molding includes a support film and an adhesive layer provided on one surface or both surfaces of the support film and containing a resin and a silane coupling agent. The content of the silane coupling agent in the temporary protective film may be more than 5% by mass and less than or equal to 35% by mass with respect to the total mass of the resin.

Abstract: A temporary protective film for semiconductor encapsulation molding includes a support film and an adhesive layer. The adhesive layer contains a thermoplastic resin and at least one compound selected from the group consisting of sorbitol polyglycidyl ether, polyethylene glycol diglycidyl ether, a glycidyl ether of an aliphatic alcohol having 10 to 20 carbon atoms, glycerol polyglycidyl ether, a polyalkylene glycol ester of a fatty acid having 2 to 30 carbon atoms, a dipentaerythritol ester of a fatty acid having 2 to 20 carbon atoms, polyethylene glycol monoalkyl ether, and polyethylene glycol dialkyl ether.

Abstract: A temporary protective film for semiconductor encapsulation molding includes a support film and an adhesive layer. The adhesive layer contains a thermoplastic resin and a low-molecular-weight additive having a molecular weight of less than 1000. The adhesive layer is configured to contain the low-molecular-weight additive so that X2 is smaller than X1 when X1 is a proportion of an oxygen atom in a surface of a copper plate as determined after the temporary protective film is bonded to the surface of the copper plate in a direction in which the adhesive layer comes into contact with the copper plate to form a bonded body having the copper plate and the temporary protective film, and then the bonded body is initially heated at 180° C. for 1 hour, while X2 is a proportion of the oxygen atom in the surface of the copper plate as determined after the bonded body is subjected to a thermal treatment at 400° C. for 2 minutes subsequent to the initial heating.

Abstract: A temporary protective film for semiconductor encapsulation molding, the temporary protective film including a support film, an adhesive layer provided on one surface of the support film, and a non-adhesive layer provided on a surface of the support film on an opposite side from the surface provided with the adhesive layer. The thickness of the non-adhesive layer is 10 ?m or less. A surface of the non-adhesive layer on an opposite side of a surface in contact with the support film, has a surface roughness Ra of 0.1 ?m or more.

Abstract: A temporary protective film including a support film and an adhesive layer provided on one surface or both surfaces of the support film. The support film is a polyimide film. The thickness of the adhesive layer is less than 8 ?m.

Abstract: Disclosed is a temporary protective film for semiconductor sealing molding comprising: a support film; and an adhesive layer provided on one surface or both surfaces of the support film and containing a resin and a silane coupling agent, and the content of the silane coupling agent in the temporary protective film may be more than 5% by mass and less than or equal to 35% by mass with respect to the total mass of the resin.

Abstract: A temporary protective film for semiconductor sealing molding includes a support film and an adhesive layer provided on one surface or both surfaces of the support film and containing a resin and a silane coupling agent. The content of the silane coupling agent in the temporary protective film may be more than 5% by mass and less than or equal to 35% by mass with respect to the total mass of the resin.

Abstract: A temporary protective film for temporarily protecting a surface of a semiconductor substrate that is opposite to a surface on which a semiconductor element is mounted. The temporary protective film includes an adhesive layer containing acrylic rubber. When the temporary protective film is attached to a copper alloy plate at 25° C. so that the adhesive layer is in contact with the copper alloy plate, and the obtained laminate is sequentially heated at 180° C. for 60 minutes and at 200° C. for 60 minutes, a 90-degree peeling strength of the temporary protective film against the copper alloy plate is 5 N/m or more at 25° C. before heating the laminate and 150 N/m or less at 50° C. after heating the laminate.

Abstract: Disclosed is a temporary protective film for semiconductor sealing molding 10 including a support film 1; and an adhesive layer 2 provided on the support film 1 and containing an acrylic rubber. A solid shear modulus at 200° C. of the temporary protective film for semiconductor sealing molding 10 may be 5.0 MPa or higher.

Abstract: A temporary protective film comprising a support film and an adhesive layer provided on one surface or both surfaces of the support film is disclosed. The coefficient of linear expansion at 30° C. to 200° C. of the temporary protective film may be greater than or equal to 16 ppm/° C. and less than or equal to 20 ppm/° C. in at least one in-plane direction of the temporary protective film.

Abstract: Disclosed is a temporary protective film for semiconductor sealing molding comprising: a support film; and an adhesive layer provided on one surface or both surfaces of the support film and containing a resin and a silane coupling agent, and the content of the silane coupling agent in the temporary protective film may be more than 5% by mass and less than or equal to 35% by mass with respect to the total mass of the resin.

Abstract: Disclosed is a temporary protective film for semiconductor sealing molding 10 including a support film 1; and an adhesive layer 2 provided on the support film 1 and containing an acrylic rubber. A solid shear modulus at 200° C. of the temporary protective film for semiconductor sealing molding 10 may be 5.0 MPa or higher.

Abstract: The object of the present invention is to provide an adhesion film for semiconductor that is capable of bonding a semiconductor chip to a lead frame tightly at an adhesion temperature lower than that of the adhesion film of a traditional polyimide resin without generation of voids and that can also be used for protection of lead frame-exposed area, a thermoplastic resin composition for semiconductor for use in the adhesive agent layer therein, and a lead frame having the adhesive film and a semiconductor device; and, to achieve the object, the present invention provides a thermoplastic resin composition for semiconductor, comprising a thermoplastic resin obtained in reaction of an amine component containing an aromatic diamine mixture (A) containing 1,3-bis(3-aminophenoxy)benzene, 3-(3?-(3?-aminophenoxy)phenyl)amino-1-(3?-(3?-aminophenoxy)phenoxy)benzene and 3,3?-bis(3?-aminophenoxy)diphenylether, and an acid component (C), an adhesion film for semiconductor using the same, a lead frame having the adhesion fi

Abstract: The object of the present invention is to provide an adhesion film for semiconductor that is capable of bonding a semiconductor chip to a lead frame tightly at an adhesion temperature lower than that of the adhesion film of a traditional polyimide resin without generation of voids and that can also be used for protection of lead frame-exposed area, a thermoplastic resin composition for semiconductor for use in the adhesive agent layer therein, and a lead frame having the adhesive film and a semiconductor device; and, to achieve the object, the present invention provides a thermoplastic resin composition for semiconductor, comprising a thermoplastic resin obtained in reaction of an amine component containing an aromatic diamine mixture (A) containing 1,3-bis(3-aminophenoxy)benzene, 3-(3?-(3?-aminophenoxy)phenyl)amino-1-(3?-(3?-aminophenoxy)phenoxy)benzene and 3,3?-bis(3?-aminophenoxy)diphenylether, and an acid component (C), an adhesion film for semiconductor using the same, a lead frame having the adhesion fi

Abstract: The present invention provides an adhesive film that combines low temperature adhesion with favorable wire bonding characteristics. The adhesive film used for bonding a semiconductor element to a target adherend comprises an adhesive layer formed on one surface, or both surfaces, of a heat resistant film, the adhesive layer comprises a resin A and a resin B, a glass transition temperature of the resin A is lower than a glass transition temperature of the resin B, and the adhesive layer has a sea-island structure, in which the resin A forms the sea, and the resin B forms the islands.

Abstract: There are disclosed a photosensitive resin composition comprising: at least one photosensitive resin among a polyamide resin (A) having a repeating unit (U1) represented by general formula (I) below and a polyamideimide resin (B) having a repeating unit (U2) represented by general formula (II); and at least one photopolymerizable compound among a silane coupling agent (C) having a photopolymerizable unsaturated bond and a photopolymerizable unsaturated monomer (D) comprising a monomer (d1) having at least 5 photopolymerizable unsaturated bonds per molecule General formula (I): (in the formula, X1 denotes a trivalent organic group having an aromatic ring, Y1 denotes a divalent organic group having an aromatic ring, and R1 denotes a monovalent organic group having a photosensitive group) General formula (II): (in the formula, X2 and Y2 denote trivalent organic groups having an aromatic ring, and R2 denotes a monovalent organic group having a photosensitive group), a pattern production process using s

Abstract: There are disclosed a photosensitive resin composition comprising: