Abstract: A semiconductor device includes a chip, a laser element formed on the chip and a heating element formed on the chip. The laser element is driven to emit a laser beam upon light-on of a laser. Upon light-off of a laser, switching is made so that the heating element is driven so as not to emit the laser beam in the normal laser beam emission direction by the laser element.

Abstract: An image recording apparatus for printing an image on a conveyed recording medium, includes a sensor, arranged on a convey path of the recording medium, for detecting presence/absence of the recording medium, a setting unit for setting a debouncing time of the recording medium, and a switching unit for switching the debouncing time.

Abstract: An image recording apparatus operated in synchronism with a vertical synchronization signal from an external device comprises a unit for sending out to the external device a signal indicating a status to accept the vertical synchronization signal, and switching device for switching between a plurality of operation modes related to an elapsed time from the send-out of the signal by the signal sending unit.

Abstract: A temperature control device for controlling a surface temperature of a member to be heated at a predetermined temperature includes a detector for detecting the surface temperature, and a control unit for controlling current supply for a heating source for heating the member to be heated so that a result of detection by the detector is maintained at a predetermined value. The control unit controls a time of current supply for the heating source during a constant temperature control according to data relating to peak temperatures of the surface temperature during the constant temperature control.

Abstract: In a power supply circuit for a motor in which a power source line can be opened and closed by a first opening-closing device, a construction is adopted which has a electrically controllable second opening-closing device connected in parallel to the first opening-closing device, a comparator for comparing the voltage of the motor load side with a predetermined value, a controller for controlling the opening and closing of the second opening-closing device on the basis of a signal from the comparator, and a current limiter device provided in parallel to the second opening-closing device, whereby a rush current when the first opening-closing device is closed can be suppressed to thereby prevent the fluctuation of the source voltage and the deterioration of the contacts of the first opening-closing device.

Abstract: An oxide superconducting film is formed by CVD. The starting material gas sources are Ba(DPM).sub.2, Ba(DPM).sub.2 .multidot.(THF).sub.n or Ba(DPM).sub.2 .multidot.(DMF).sub.n ; Cu(DPM).sub.2, Cu(DPM).sub.2 .multidot.(THF).sub.n or Cu(DPM).sub.2 .multidot.(DMF).sub.n ; and M(DPM).sub.3, M(DPM).sub.3 .multidot.(THF).sub.n or M(DPM).sub.3 .multidot.(DMF).sub.n, whereDPM is 2,2,6,6-tetramethyl-3,5-heptaneodianate represented by the chemical formula:CH.sub.3 C(CH.sub.3).sub.2 COCHCOC(CH.sub.3).sub.2 CH.sub.3THF is tetrahydrofuran represented by the chemical formula: ##STR1## DMF is dimethylformamide represented by the chemical formula:HCON(CH.sub.3).sub.2M is an element chosen from the list:Y, La, Nd, Pm, Sm, Eu, Er, Gd, Tb, Dy, Ho, Tm, Yb and Lu,and n is any integer. The starting gas sources are introduced into a growth tank after gasification together with at least one of the gases O.sub.2, O.sub.3, or N.sub.2 O, and the oxide film being formed on a substrate placed in said growth tank.

Abstract: A method for forming a superconductive thin film according to the invention wherein a superconductive thin film of an oxide obtaining Bi (bismuth) is formed on an substrate by a chemical vapor deposition technique makes use of triphenyl bismuth, Bi-(C.sub.6 H.sub.5).sub.3, as a gas source for bismuth. By this, the resultant superconductive thin film has a flat surface without damages, and good superconductive characteristics. Where the substrate is susceptible to oxidation, at least a mono-atomic layer of bismuth is formed on the substrate, after which the superconductive thin film is formed. Accordingly, stable transmission of a deposition gas is ensured with the substrate being prevented from oxidation.

Abstract: A heating resistor includes a conductive material, and an electrically insulating material made of a mixture of silicon carbide (SiC) and carbon (C) having a carbon content of not less than 3 wt % based on the mixture. The resistor is formed by sputtering of a target of the conductive material and the electrically insulating material having at least 5 wt % of carbon. The conductive material and the electrically insulating material may be respectively provided as separate targets. The conductive material is at least one metal selected from tantalum, niobium, titanium, tungsten, molybdenum, zirconium and chromium.