Abstract: A Johnsen-Rahbek force type electrostatic chuck including: a metal substrate; an electrode for electrostatic attraction provided on the metal substrate with an insulating layer interposed between the metal substrate and the electrode for electrostatic attraction; and a dielectric layer constituting an electrostatic attraction surface in contact with a workpiece. The dielectric layer includes a ceramic spray coating and a sealing component with which pores of the ceramic spray coating are filled, and the sealing component contains a metal organic salt containing a rare earth element.

Abstract: A Johnsen-Rahbek force type electrostatic chuck including: a metal substrate; an electrode for electrostatic attraction provided on the metal substrate with an insulating layer interposed between the metal substrate and the electrode for electrostatic attraction; and a dielectric layer constituting an electrostatic attraction surface in contact with a workpiece. The dielectric layer includes a ceramic spray coating and a sealing component with which pores of the ceramic spray coating are filled, and the sealing component contains a metal organic salt containing a rare earth element.

Abstract: A composite thermoelectric material includes: a thermoelectric material of an intermetallic compound series; and a film that is coated over the whole or a part of the surface of the thermoelectric material and contains aluminum phosphate (AlPO4) as a main component. Such a composite thermoelectric material is obtained by: applying a coating liquid obtained by dispersing or dissolving aluminum phosphate (AlPO4) into a solvent over the surface of a thermoelectric material; drying the coating liquid and obtaining a precursor film; and firing the thermoelectric material over which the precursor film is formed.

Abstract: There is provided a substrate processing apparatus, comprising: a processing chamber in which a plurality of substrates are housed, the substrate having thereon a lamination film composed of any one of copper-indium, copper-gallium, or copper-indium-gallium; a reaction tube formed so as to constitute the processing chamber; a gas supply tube configured to introduce elemental selenium-containing gas or elemental sulfur-containing gas to the processing chamber; an exhaust tube configured to exhaust an atmosphere in the processing chamber; and a heating section provided so as to surround the reaction tube, wherein a porous coating film having a void rate of 5% to 15% mainly composed of a mixture of chromium oxide (CrxOy:x, y are arbitrary integer of 1 or more) silica is formed on a surface exposed to at least the elemental selenium-containing gas or the elemental sulfur-containing gas, out of the surface of the reaction tube on the processing chamber side.