Patents by Inventor Tomohiro Nishiwaki

Tomohiro Nishiwaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Bipolar electrode bubble detection method and apparatus
    Patent number: 11619604
    Abstract: A bubble detection method includes flowing a fluid through a conduit containing at least one bipolar electrode, applying an electric field across the fluid in the conduit, and detecting a presence of a bubble in the fluid when the bubble flows around or through the bipolar electrode by detecting a current or voltage output from the at least one bipolar electrode.
    Type: Grant
    Filed: May 14, 2021
    Date of Patent: April 4, 2023
    Assignee: SANDISK TECHNOLOGIES LLC
    Inventors: Yutaka Ishiguro, Shoichi Taniguchi, Tomohiro Nishiwaki, Ruinian Tian
  • BIPOLAR ELECTRODE BUBBLE DETECTION METHOD AND APPARATUS
    Publication number: 20220365016
    Abstract: A bubble detection method includes flowing a fluid through a conduit containing at least one bipolar electrode, applying an electric field across the fluid in the conduit, and detecting a presence of a bubble in the fluid when the bubble flows around or through the bipolar electrode by detecting a current or voltage output from the at least one bipolar electrode.
    Type: Application
    Filed: May 14, 2021
    Publication date: November 17, 2022
    Inventors: Yutaka ISHIGURO, Shoichi TANIGUCHI, Tomohiro NISHIWAKI, Ruinian TIAN
  • Method for manufacturing semiconductor integrated circuit device
    Patent number: 7943054
    Abstract: Cracks are generated in a resist film part used to form an opening part in a photoreceptor part, whereby etching is performed as far as the inter-layer insulating film in unintended portions. In order to prevent this, the resist pattern used as an etching mask is formed in a shape that disperses the stress. The stress is generated because the resist is hardened by post baking after having been exposed and developed. In order to disperse the stress, the opening part of the resist pattern is formed in a planar shape that has no corners.
    Type: Grant
    Filed: March 24, 2008
    Date of Patent: May 17, 2011
    Assignees: Sanyo Electric Co., Ltd., Sanyo Semiconductor Co., Ltd.
    Inventors: Tomohiro Nishiwaki, Kazushige Kaneko, Tetsuya Yamada, Yoji Nomura
  • Method for manufacturing semiconductor integrated circuit device
    Publication number: 20080242093
    Abstract: Cracks are generated in a resist film part used to form an opening part in a photoreceptor part, whereby etching is performed as far as the inter-layer insulating film in unintended portions. In order to prevent this, the resist pattern used as an etching mask is formed in a shape that disperses the stress. The stress is generated because the resist is hardened by post baking after having been exposed and developed. In order to disperse the stress, the opening part of the resist pattern is formed in a planar shape that has no corners.
    Type: Application
    Filed: March 24, 2008
    Publication date: October 2, 2008
    Applicants: SANYO ELECTRIC CO., LTD., SANYO SEMICONDUCTOR CO., LTD.
    Inventors: Tomohiro Nishiwaki, Kazushige Kaneko, Tetsuya Yamada, Yoji Nomura