Patents by Inventor Tomohiro Nitta

Tomohiro Nitta has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nitride semiconductor device
    Publication number: 20070051977
    Abstract: A nitride semiconductor device comprises: a substrate body including a conductive substrate portion and a high resistance portion; a first semiconductor layer of a nitride semiconductor provided on the substrate body; a second semiconductor layer provided on the first semiconductor layer; a first main electrode provided on the second semiconductor layer; a second main electrode provided on the second semiconductor layer; and a control electrode provided on the second semiconductor layer between the first main electrode and the second main electrode. The second semiconductor layer is made of a nondoped or n-type nitride semiconductor having a wider bandgap than the first semiconductor layer. The first main electrode is provided above the conductive portion and the second main electrode is provided above the high resistance portion.
    Type: Application
    Filed: August 22, 2006
    Publication date: March 8, 2007
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Wataru Saito, Masaaki Onomura, Akira Tanaka, Koichi Tachibana, Masahiko Kuraguchi, Takao Noda, Tomohiro Nitta, Akira Yoshioka