Patents by Inventor Tomohiro Nomiyama

Tomohiro Nomiyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130093314
    Abstract: ?-SiAlON represented by a general formula Si6-zAlzOzN8-z with Eu dissolved therein, whose spin density corresponding to absorption g=2.00±0.02 at 25° C. obtained by the electron spin resonance method is equal to or lower than 6.0×1016 spins/g. A method of manufacturing the ?-SiAlON includes: a mixing step of mixing ?-SiAlON materials; a baking step of baking the ?-SiAlON having undergone the mixing step; a heating step of increasing the ambient temperature of the materials having undergone the mixing step from 1500° C. to a baking temperature of the baking step at a rate equal to or lower than 2° C/min.; an annealing step of annealing the ?-SiAlON having undergone the baking step; and an acid treatment step of acid-treating the ?-SiAlON having undergone the annealing step. The objective of the present invention is to provide ?-SiAlON capable of achieving high luminescent efficiency, a method of manufacturing the ?-SiAlON, and a light-emitting device using the ?-SiAlON.
    Type: Application
    Filed: July 28, 2011
    Publication date: April 18, 2013
    Applicant: DENKI KAGAKU KOGYO KABUSHIKI KAISHA
    Inventors: Go Takeda, Hisayuki Hashimoto, Masayoshi Ichikawa, Tomohiro Nomiyama, Suzuya Yamada
  • Publication number: 20120223448
    Abstract: Provided is a production method of a ?-sialon phosphor that europium ions are solid-solved in ?-sialon, including a mixing process for mixing raw materials of the ?-sialon phosphor; a burning process for burning the raw materials after the mixing process to form the ?-sialon phosphor; a HIP treatment process in which the ?-sialon phosphor after the burning process is subjected to a HIP treatment; an annealing process in which the ?-sialon phosphor after the HIP treatment process is subjected to an annealing treatment; and an acid treatment process in which the ?-sialon phosphor after the annealing process is subjected to an acid treatment. According to the production method of a ?-sialon phosphor, a ?-sialon phosphor excellent in luminescence intensity is obtained.
    Type: Application
    Filed: November 1, 2010
    Publication date: September 6, 2012
    Inventors: Tomohiro Nomiyama, Suzuya Yamada, Hisayuki Hashimoto
  • Publication number: 20110279018
    Abstract: ?-sialon phosphor that is ?-sialon represented by a general expression: (M)x(Eu)y(Si, Al)12(O, N)16 (where M is one or more types of elements selected from a group consisting of Li, Mg, Ca, and Y as well as lanthanide element (except for La and Ce) and including at least Ca), the ?-sialon phosphor being structured so that an oxygen content is 1.2 mass % or less and primary particles constituting the ?-sialon have a columnar shape. When the ?-sialon phosphor receives ultraviolet rays or visible light having a wavelength from 250 to 500 nm as an excitation source, the ?-sialon phosphor shows a fluorescent characteristic having a peak in a wavelength region from 595 to 630 nm.
    Type: Application
    Filed: January 26, 2010
    Publication date: November 17, 2011
    Inventors: Hideyuki Emoto, Mitsuru Kawagoe, Tomohiro Nomiyama