Abstract: A highly functional photoelectric conversion element is provided.

Abstract: Light reduction in a wiring part connected to an optical device of an electronic device including the optical device is prevented. The electronic device includes an insulating layer, an interlayer connection wiring, and an upper layer wiring. The insulating layer is disposed adjacent to the lower layer wiring and includes a through hole. The interlayer connection wiring is a transparent wiring that is connected to the lower layer wiring in the through hole and is formed into a shape extending to a surface side of the insulating layer. The upper layer wiring is a transparent wiring that is stacked and connected to the interlayer connection wiring extending to the surface side of the insulating layer.

Abstract: The present technology relates to an imaging device, an electronic device, and a manufacturing method capable of evaluating a chip at a desired timing. The imaging device includes: a first semiconductor chip; and a second semiconductor chip stacked on the first semiconductor chip, in which at least one surface of side surfaces of the first semiconductor chip and at least one surface of side surfaces of the second semiconductor chip are on the same plane. The first semiconductor chip includes a first structure having a ring-shape, and the second semiconductor chip is disposed at a position straddling the first structure on the first semiconductor chip. The present technology can be applied to, for example, an imaging device in which a plurality of semiconductor chips is stacked.

Abstract: A solid-state image sensor includes a semiconductor substrate having a photoelectric conversion element converting incident light into a charge and a charge retaining section temporarily retaining the charge photoelectrically converted by the photoelectric conversion element and a light shielding section having an embedded section extending in at least a region between the photoelectric conversion element and the charge retaining section of the semiconductor substrate.

Abstract: The present technology relates to a solid-state image pickup element, electronic equipment, and a semiconductor apparatus that make it possible to reduce a surface reflection in an area in which a slit is formed and improve flare characteristics. A solid-state image pickup element includes a pixel area in which a plurality of pixels is two-dimensionally arranged in a matrix, a chip mounting area in which a chip is flip-chip mounted, and a dam area that is arranged around the chip mounting area and in which one or more slits that block an outflow of a resin are formed. In the dam area, the same OCL as that in the pixel area is formed. The present technology can be applied to a solid-state image pickup element etc. in which a chip is flip-chip mounted, for example.

Abstract: The present technology relates to a solid-state image pickup element, electronic equipment, and a semiconductor apparatus that make it possible to reduce a surface reflection in an area in which a slit is formed and improve flare characteristics. A solid-state image pickup element includes a pixel area in which a plurality of pixels is two-dimensionally arranged in a matrix, a chip mounting area in which a chip is flip-chip mounted, and a dam area that is arranged around the chip mounting area and in which one or more slits that block an outflow of a resin are formed. In the dam area, the same OCL as that in the pixel area is formed. The present technology can be applied to a solid-state image pickup element etc. in which a chip is flip-chip mounted, for example.

Abstract: The present technology relates to a solid-state image pickup element, electronic equipment, and a semiconductor apparatus that make it possible to reduce a surface reflection in an area in which a slit is formed and improve flare characteristics. A solid-state image pickup element includes a pixel area in which a plurality of pixels is two-dimensionally arranged in a matrix, a chip mounting area in which a chip is flip-chip mounted, and a dam area that is arranged around the chip mounting area and in which one or more slits that block an outflow of a resin are formed. In the dam area, the same OCL as that in the pixel area is formed. The present technology can be applied to a solid-state image pickup element etc. in which a chip is flip-chip mounted, for example.

Abstract: A solid-state image sensor includes a semiconductor substrate having a photoelectric conversion element converting incident light into a charge and a charge retaining section temporarily retaining the charge photoelectrically converted by the photoelectric conversion element and a light shielding section having an embedded section extending in at least a region between the photoelectric conversion element and the charge retaining section of the semiconductor substrate.

Abstract: A solid-state image sensor includes a semiconductor substrate having a photoelectric conversion element converting incident light into a charge and a charge retaining section temporarily retaining the charge photoelectrically converted by the photoelectric conversion element and a light shielding section having an embedded section extending in at least a region between the photoelectric conversion element and the charge retaining section of the semiconductor substrate.

Abstract: A solid-state image sensor includes a semiconductor substrate having a photoelectric conversion element converting incident light into a charge and a charge retaining section temporarily retaining the charge photoelectrically converted by the photoelectric conversion element and a light shielding section having an embedded section extending in at least a region between the photoelectric conversion element and the charge retaining section of the semiconductor substrate.

Abstract: The present technology relates to a solid-state image pickup element, electronic equipment, and a semiconductor apparatus that make it possible to reduce a surface reflection in an area in which a slit is formed and improve flare characteristics. A solid-state image pickup element includes a pixel area in which a plurality of pixels is two-dimensionally arranged in a matrix, a chip mounting area in which a chip is flip-chip mounted, and a dam area that is arranged around the chip mounting area and in which one or more slits that block an outflow of a resin are formed. In the dam area, the same OCL as that in the pixel area is formed. The present technology can be applied to a solid-state image pickup element etc. in which a chip is flip-chip mounted, for example.

Abstract: A solid-state image sensor includes a semiconductor substrate having a photoelectric conversion element converting incident light into a charge and a charge retaining section temporarily retaining the charge photoelectrically converted by the photoelectric conversion element and a light shielding section having an embedded section extending in at least a region between the photoelectric conversion element and the charge retaining section of the semiconductor substrate.

Abstract: An image sensor includes a plurality of unit pixels formed as a semiconductor chip, each of which has a photoelectric converting unit, a charge holding unit that holds charges stored in the photoelectric converting unit, a charge-voltage converting unit that converts a charge transferred from the charge holding unit to a voltage, and light shielding films between which an opening is formed above the photoelectric converting unit. The plurality of unit pixels are placed in a matrix in a pixel array. The shapes of the light shielding films are varied depending on the position of the unit pixel in the pixel array.

Abstract: An image sensor includes a plurality of unit pixels formed as a semiconductor chip, each of which has a photoelectric converting unit, a charge holding unit that holds charges stored in the photoelectric converting unit, a charge-voltage converting unit that converts a charge transferred from the charge holding unit to a voltage, and light shielding films between which an opening is formed above the photoelectric converting unit. The plurality of unit pixels are placed in a matrix in a pixel array. The shapes of the light shielding films are varied depending on the position of the unit pixel in the pixel array.

Abstract: A solid-state image sensor includes a semiconductor substrate having a photoelectric conversion element converting incident light into a charge and a charge retaining section temporarily retaining the charge photoelectrically converted by the photoelectric conversion element and a light shielding section having an embedded section extending in at least a region between the photoelectric conversion element and the charge retaining section of the semiconductor substrate.

Abstract: A solid-state image sensor includes a semiconductor substrate having a photoelectric conversion element converting incident light into a charge and a charge retaining section temporarily retaining the charge photoelectrically converted by the photoelectric conversion element and a light shielding section having an embedded section extending in at least a region between the photoelectric conversion element and the charge retaining section of the semiconductor substrate.

Abstract: A solid-state image sensor includes a semiconductor substrate having a photoelectric conversion element converting incident light into a charge and a charge retaining section temporarily retaining the charge photoelectrically converted by the photoelectric conversion element and a light shielding section having an embedded section extending in at least a region between the photoelectric conversion element and the charge retaining section of the semiconductor substrate.

Abstract: A solid-state image sensor includes a semiconductor substrate having a photoelectric conversion element converting incident light into a charge and a charge retaining section temporarily retaining the charge photoelectrically converted by the photoelectric conversion element and a light shielding section having an embedded section extending in at least a region between the photoelectric conversion element and the charge retaining section of the semiconductor substrate.

Abstract: An image sensor includes a plurality of unit pixels formed as a semiconductor chip, each of which has a photoelectric converting unit, a charge holding unit that holds charges stored in the photoelectric converting unit, a charge-voltage converting unit that converts a charge transferred from the charge holding unit to a voltage, and light shielding films between which an opening is formed above the photoelectric converting unit. The plurality of unit pixels are placed in a matrix in a pixel array. The shapes of the light shielding films are varied depending on the position of the unit pixel in the pixel array.

Abstract: A solid-state image sensor includes a semiconductor substrate having a photoelectric conversion element converting incident light into a charge and a charge retaining section temporarily retaining the charge photoelectrically converted by the photoelectric conversion element and a light shielding section having an embedded section extending in at least a region between the photoelectric conversion element and the charge retaining section of the semiconductor substrate.