Abstract: A drive circuit for an electromagnetic brake is used in a circuit including a motor, a converter converting a DC voltage into an AC voltage to be generated between a pair of DC link buses, and an inverter converting the DC voltage into an AC voltage and driving the motor. A full-bridge circuit has a pair of power supply terminals connected to the pair of DC link buses, and a pair of output terminals connected to the electromagnetic brake.

Abstract: A drive circuit for an electromagnetic brake is used in a circuit including a motor, a converter converting a DC voltage into an AC voltage to be generated between a pair of DC link buses, and an inverter converting the DC voltage into an AC voltage and driving the motor. A full-bridge circuit has a pair of power supply terminals connected to the pair of DC link buses, and a pair of output terminals connected to the electromagnetic brake.

Abstract: According to an aspect of the present invention, there is provided a semiconductor device including a semiconductor substrate which includes a number of chip areas, a processed film which is formed on the semiconductor substrate, and a ring-shaped pattern which is formed on the processed film and along a peripheral portion of the semiconductor substrate.

Abstract: According to an aspect of the present invention, there is provided a semiconductor device including a semiconductor substrate which includes a number of chip areas, a processed film which is formed on the semiconductor substrate, and a ring-shaped pattern which is formed on the processed film and along a peripheral portion of the semiconductor substrate.

Abstract: A semiconductor chip comprise a semiconductor substrate; circuit elements formed on a surface of the semiconductor substrate; a wiring layer including wiring electrically connected to the circuit elements; an intermediate insulation layer provided between the wiring layer and the semiconductor substrate; a first guard ring provided in the intermediate insulation layer so as to surround a periphery of the circuit elements; a plurality of capacitor electrodes provided at intervals in the intermediate insulation layer and located between the first guard ring and the circuit elements or outside the first guard ring; and a plurality of capacitor pads electrically connected to each of the capacitor electrodes, respectively.

Abstract: A semiconductor device comprises a semiconductor substrate, a multilayer interconnect provided on the semiconductor substrate, the multilayer interconnect comprising a plurality of layers of insulating films and interconnects, at least one fuse interconnect provided in a layer higher than the multilayer interconnect, and a moisture absorption preventing hollow member including a hollow structure, the moisture absorption preventing hollow member selectively surrounding the at least one fuse interconnect and reaching a surface of the semiconductor substrate through the multilayer interconnect, the moisture absorption preventing hollow member comprising a material having a lower hygroscopicity than the plurality of layers of insulating films.