Abstract: A high frequency semiconductor device package includes a metal plate, a frame body, a first lead part, a second lead part, a first conductive layer, and a second conductive layer. The frame body includes a first frame part made and a second frame part. The first frame part has a lower surface bonded to the metal plate. The first frame part has an upper surface including a first region and a second region. The first lead part protrudes outward along a line passing through a central part of the first region and a central part of the second region in plan view. The second lead part protrudes outward along the line in plan view. The first conductive layer includes a first stripe part and a first connection part. The second conductive layer includes a second stripe part and a second connection part.

Abstract: A high frequency semiconductor amplifier includes a package base part, and a monolithic microwave integrated circuit. The package base part includes a metal plate provided with an attachment hole, a frame body bonded to the metal plate and provided with an opening, a first lead part, and a second lead part. The monolithic microwave integrated circuit is provided with a first amplification element and a second amplification element. An output electrode of the second amplification element is connected to the second lead part via an output combiner. Each finger electrode of the second amplification element is generally orthogonal to the first line. Each finger electrode of the first amplification element is generally parallel to the first line. The attachment hole of the metal plate is provided in a region lying along a second line generally orthogonal to the first line and protruding outside the frame body.

Abstract: A high frequency semiconductor amplifier includes a package base part, and a monolithic microwave integrated circuit. The package base part includes a metal plate provided with an attachment hole, a frame body bonded to the metal plate and provided with an opening, a first lead part, and a second lead part. The monolithic microwave integrated circuit is provided with a first amplification element and a second amplification element. An output electrode of the second amplification element is connected to the second lead part via an output combiner. Each finger electrode of the second amplification element is generally orthogonal to the first line. Each finger electrode of the first amplification element is generally parallel to the first line. The attachment hole of the metal plate is provided in a region lying along a second line generally orthogonal to the first line and protruding outside the frame body.

Abstract: A high frequency semiconductor device package includes a metal plate, a frame body, a first lead part, a second lead part, a first conductive layer, and a second conductive layer. The frame body includes a first frame part made and a second frame part. The first frame part has a lower surface bonded to the metal plate. The first frame part has an upper surface including a first region and a second region. The first lead part protrudes outward along a line passing through a central part of the first region and a central part of the second region in plan view. The second lead part protrudes outward along the line in plan view. The first conductive layer includes a first stripe part and a first connection part. The second conductive layer includes a second stripe part and a second connection part.

Abstract: A high frequency ceramic package includes: a first conductive pattern placed on the top surface of a ceramic RF substrate; a second conductive pattern placed on the bottom surface of the ceramic RF substrate; a through hole for passing through the top surface and bottom surface of the ceramic RF substrate; a through hole metal layer which is filled up in the through hole and which connects the first conductive pattern and the second conductive pattern; a ceramic seal ring placed on the ceramic RF substrate; an insulating adhesive bond placed on the ceramic seal ring; and a ceramic cap placed on the insulating adhesive bond, wherein the second conductive pattern is used as an external terminal, and between the ceramic cap and the top surfaces of the ceramic seal ring is sealed with the insulating adhesive bond and it is simple for structure and excellent in high frequency characteristics.

Abstract: According to an embodiment, a semiconductor package includes: a base substrate made of a metal; a frame body made of a dielectric, placed on a surface of the base substrate, and including an opening portion in its center portion; a seal member placed on an upper surface of the frame body, and including an opening portion in its center portion; and a lid portion placed on an upper surface of the seal member. The thickness of the seal member is substantially equal to that of the base substrate, and a coefficient of linear expansion of the seal member is substantially equal to that of the base substrate. The base substrate, the first frame body, the second frame body, the seal member and the lid portion form a space.

Abstract: A high frequency ceramic package includes: a first conductive pattern placed on the top surface of a ceramic RF substrate; a second conductive pattern placed on the bottom surface of the ceramic RF substrate; a through hole for passing through the top surface and bottom surface of the ceramic RF substrate; a through hole metal layer which is filled up in the through hole and which connects the first conductive pattern and the second conductive pattern; a ceramic seal ring placed on the ceramic RF substrate; an insulating adhesive bond placed on the ceramic seal ring; and a ceramic cap placed on the insulating adhesive bond, wherein the second conductive pattern is used as an external terminal, and between the ceramic cap and the top surfaces of the ceramic seal ring is sealed with the insulating adhesive bond and it is simple for structure and excellent in high frequency characteristics.