Patents by Inventor Tomohiro Syounai

Tomohiro Syounai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for producing silicon carbide single crystal
    Patent number: 7993453
    Abstract: A method for the production of an SiC single crystal includes the steps of growing a first SiC single crystal in a first direction of growth on a first seed crystal formed of an SiC single crystal, disposing the first SiC single crystal grown on the first seed crystal in a direction parallel or oblique to the first direction of growth and cutting the disposed first SiC single crystal in a direction of a major axis in a cross section perpendicular to the first direction of growth to obtain a second seed crystal, using the second seed crystal to grow thereon in a second direction of growth a second SiC single crystal to a thickness greater than a length of the major axis in the cross section, disposing the second SiC single crystal grown on the second seed crystal in a direction parallel or oblique to the second direction of growth and cutting the disposed second SiC single crystal in a direction of a major axis in a cross section perpendicular to the second direction of growth to obtain a third seed crystal, u
    Type: Grant
    Filed: May 10, 2007
    Date of Patent: August 9, 2011
    Assignee: Showa Denko K.K.
    Inventors: Naoki Oyanagi, Tomohiro Syounai, Yasuyuki Sakaguchi
  • METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL
    Publication number: 20090184327
    Abstract: A method for the production of an SiC single crystal includes the steps of growing a first SiC single crystal in a first direction of growth on a first seed crystal formed of an SiC single crystal, disposing the first SiC single crystal grown on the first seed crystal in a direction parallel or oblique to the first direction of growth and cutting the disposed first SiC single crystal in a direction of a major axis in a cross section perpendicular to the first direction of growth to obtain a second seed crystal, using the second seed crystal to grow thereon in a second direction of growth a second SiC single crystal to a thickness greater than a length of the major axis in the cross section, disposing the second SiC single crystal grown on the second seed crystal in a direction parallel or oblique to the second direction of growth and cutting the disposed second SiC single crystal in a direction of a major axis in a cross section perpendicular to the second direction of growth to obtain a third seed crystal, u
    Type: Application
    Filed: May 10, 2007
    Publication date: July 23, 2009
    Applicant: Showa Denko K.K.
    Inventors: Naoki Oyanagi, Tomohiro Syounai, Yasuyuki Sakaguchi