Abstract: The glass run includes: a trim portion attached to a flange portion of a door frame and formed in a substantially U-shaped cross section from a glass run-side side wall, a body-side side wall, and a bottom wall connecting the glass run-side side wall and the body-side side wall; and a glass run portion integrally formed with the trim portion and sealing a space between the glass run portion and a door glass. In the trim portion, an insert including a plurality of strip-like skeletal pieces made of metal and arranged in substantially parallel to each other and connecting portions connecting the skeletal pieces is embedded. The connecting portions of the insert are embedded in either one of the glass run-side side wall and the body-side side wall of the trim portion.

Abstract: A quantum cascade laser of an embodiment includes a semiconductor stacked body in which a ridge waveguide is provided. The semiconductor stacked body includes an active layer including a quantum well region including a layer including Al; and the active layer emits laser light. The layer that includes Al includes first regions, and a second region interposed between the first regions; the first region includes Al oxide and reaches a prescribed depth inward from an outer edge of the active layer along a direction parallel to a surface of the active layer in a cross section orthogonal to the optical axis; and the second region does not include Al oxide.

Abstract: A semiconductor laser wafer includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, and a composition evaluation layer. The active layer is provided on the first semiconductor layer; multiple periods of pairs of a light-emitting multi-quantum well region and an injection multi-quantum well region are stacked in the active layer; the light-emitting multi-quantum well region is made of a first compound semiconductor and a second compound semiconductor. The second semiconductor layer is provided on the active layer. The composition evaluation layer is provided above the active layer and includes a first film and a second film; the first film is made of the first compound semiconductor and has a first thickness; and the second film is made of the second compound semiconductor and has a second thickness.

Abstract: A semiconductor laser wafer includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, and a composition evaluation layer. The active layer is provided on the first semiconductor layer; multiple periods of pairs of a light-emitting multi-quantum well region and an injection multi-quantum well region are stacked in the active layer; the light-emitting multi-quantum well region is made of a first compound semiconductor and a second compound semiconductor. The second semiconductor layer is provided on the active layer. The composition evaluation layer is provided above the active layer and includes a first film and a second film; the first film is made of the first compound semiconductor and has a first thickness; and the second film is made of the second compound semiconductor and has a second thickness.

Abstract: A quantum cascade laser of an embodiment includes a semiconductor stacked body in which a ridge waveguide is provided. The semiconductor stacked body includes an active layer including a quantum well region including a layer including Al; and the active layer emits laser light. The layer that includes Al includes first regions, and a second region interposed between the first regions; the first region includes Al oxide and reaches a prescribed depth inward from an outer edge of the active layer along a direction parallel to a surface of the active layer in a cross section orthogonal to the optical axis; and the second region does not include Al oxide.

Abstract: A surface-emitting quantum cascade laser of an embodiment comprises a substrate, an active layer, and a photonic crystal layer. The active layer has optical nonlinearity, and is capable of emitting a first and a second infrared laser light. The photonic crystal layer includes a first and a second region. The rectangular grating of the first region is orthogonal to the rectangular grating of the second region. The first infrared laser light has a wavelength corresponding to a maximum gain outside a first photonic bandgap in a direction parallel to a first side of two sides constituting the rectangular grating. The second infrared laser light has a wavelength corresponding to a maximum gain outside a second photonic bandgap in a direction parallel to a second side of the two sides of the rectangular grating.

Abstract: A according to one embodiment, an optical measurement system has an optical waveguide sensor chip mounted thereon, the optical waveguide sensor chip has a space defined by a plurality of surfaces including a first surface along which an optical waveguide part is provided. The optical measurement system includes a holding surface, a light transceiver, and a contact sensor. The holding surface holds the bottom surface of the optical waveguide sensor chip. The light transceiver lets light be incident on the optical waveguide sensor chip through a first window in the holding surface, and receives light that has passed through the first surface via the optical waveguide part from a second window in the holding surface. The contact sensor detects contact state in two or more detection positions located along an array direction of the first window and the second window.

Abstract: A surface-emitting quantum cascade laser of an embodiment includes a semiconductor stacked body, an upper electrode, and a lower electrode. The semiconductor stacked body includes an active layer that includes a quantum well layer and emits infrared laser light, a first semiconductor layer that includes a photonic crystal layer in which pit parts constitute a rectangular grating, and a second semiconductor layer. The upper electrode is provided on the first semiconductor layer. The lower electrode is provided on a lower surface of a region of the second semiconductor layer overlapping at least the upper electrode. The photonic crystal layer is provided on the upper surface side of the first semiconductor layer. In plan view, the semiconductor stacked body includes a surface-emitting region including the photonic crystal layer and a current injection region. The upper electrode is provided on the current injection region.

Abstract: A surface-emitting quantum cascade laser of an embodiment comprises a substrate, an active layer, and a photonic crystal layer. The active layer has optical nonlinearity, and is capable of emitting a first and a second infrared laser light. The photonic crystal layer includes a first and a second region. The rectangular grating of the first region is orthogonal to the rectangular grating of the second region. The first infrared laser light has a wavelength corresponding to a maximum gain outside a first photonic bandgap in a direction parallel to a first side of two sides constituting the rectangular grating. The second infrared laser light has a wavelength corresponding to a maximum gain outside a second photonic bandgap in a direction parallel to a second side of the two sides of the rectangular grating.

Abstract: A surface-emitting quantum cascade laser of an embodiment includes a semiconductor stacked body, an upper electrode, and a lower electrode. The semiconductor stacked body includes an active layer that includes a quantum well layer and emits infrared laser light, a first semiconductor layer that includes a photonic crystal layer in which pit parts constitute a rectangular grating, and a second semiconductor layer. The upper electrode is provided on the first semiconductor layer. The lower electrode is provided on a lower surface of a region of the second semiconductor layer overlapping at least the upper electrode. The photonic crystal layer is provided on the upper surface side of the first semiconductor layer. In plan view, the semiconductor stacked body includes a surface-emitting region including the photonic crystal layer and a current injection region. The upper electrode is provided on the current injection region.

Abstract: According to one embodiment, a measuring system using an optical waveguide is provided. The measuring system has an optical waveguide, magnetic fine particles, a magnetic field applying unit, a light source and a light receiving element. The optical waveguide has a sensing area to which first substances having a property of specifically bonding to subject substances to be measured are fixed. Second substances having a property of specifically bonding to the subject substances are fixed to the magnetic fine particle. The magnetic field applying unit generates a magnetic field for moving the magnetic fine particles. The light source inputs a light into the optical waveguide. The light receiving element receives the light output from the optical waveguide.

Abstract: A cartridge for inspection apparatus includes a container, a flow path, and a reservoir. The container is configured to contain a liquid and includes a bottom surface having a functional layer that is reactive to a test sample contained in the liquid. The flow path includes an opening above the container and introduces the liquid that has flowed therein from the opening to the container. The reservoir is configured to retain the liquid, and includes an opening that is larger than the opening of the flow path and a bottom surface that is connected to the opening of the flow path.

Abstract: A according to one embodiment, an optical measurement system has an optical waveguide sensor chip mounted thereon, the optical waveguide sensor chip has a space defined by a plurality of surfaces including a first surface along which an optical waveguide part is provided. The optical measurement system includes a holding surface, a light transceiver, and a contact sensor. The holding surface holds the bottom surface of the optical waveguide sensor chip. The light transceiver lets light be incident on the optical waveguide sensor chip through a first window in the holding surface, and receives light that has passed through the first surface via the optical waveguide part from a second window in the holding surface. The contact sensor detects contact state in two or more detection positions located along an array direction of the first window and the second window.

Abstract: An optical-waveguide sensor chip includes an optical waveguide having a first substance immobilized on the surface thereof, the first substance being specifically reactive with an analyte substance, and fine particles dispersed on the optical waveguide and having a second substance immobilized on the surface thereof, the second substance being specifically reactive with the analyte substance.

Abstract: According to one embodiment, an optical waveguide sensor chip includes an optical waveguide layer; a pair of optical elements disposed at both ends of the optical waveguide layer so that light enters the optical waveguide layer and the light exits from the optical waveguide layer; a functional film formed on a predetermined region of the optical waveguide layer; a covering layer formed in a planar region on the light entrance surface of the optical waveguide layer, in which at least the optical elements are disposed; a first through hole configured to allow the light entering the entrance-side optical element to pass therethrough; and a second through hole configured to allow the light exiting from the exit-side optical element to pass therethrough.

Abstract: An optical-waveguide sensor chip includes an optical waveguide having a first substance immobilized on the surface thereof, the first substance being specifically reactive with an analyte substance, and fine particles dispersed on the optical waveguide and having a second substance immobilized on the surface thereof, the second substance being specifically reactive with the analyte substance.

Abstract: An optical-waveguide sensor chip includes an optical waveguide having a first substance immobilized on the surface thereof, the first substance being specifically reactive with an analyte substance, and fine particles dispersed on the optical waveguide and having a second substance immobilized on the surface thereof, the second substance being specifically reactive with the analyte substance.

Abstract: A sub-lip is provided on an interior side wall portion of a main body having a U-shaped cross section in a vertical section of a glass run. The sub-lip extends from the interior side wall portion of the main body while inclined towards an inner side of a glass opening. A projecting length of the sub-lip is set such that a distal end portion of the sub-lip is brought into contact with a back surface of an interior seal lip when a door glass is inserted into an inner space of the main body.

Abstract: According to one embodiment, a measuring system using an optical waveguide is provided. The measuring system has an optical waveguide, magnetic fine particles, a magnetic field applying unit, a light source and a light receiving element. The optical waveguide has a sensing area to which first substances having a property of specifically bonding to subject substances to be measured are fixed. Second substances having a property of specifically bonding to the subject substances are fixed to the magnetic fine particle. The magnetic field applying unit generates a magnetic field for moving the magnetic fine particles. The light source inputs a light into the optical waveguide. The light receiving element receives the light output from the optical waveguide.

Abstract: An optical-waveguide sensor chip includes an optical waveguide having a first substance immobilized on the surface thereof, the first substance being specifically reactive with an analyte substance, and fine particles dispersed on the optical waveguide and having a second substance immobilized on the surface thereof, the second substance being specifically reactive with the analyte substance.