Abstract: The present invention relates to a raw material of an organoruthenium compound for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method. This organoruthenium compound is an organoruthenium compound represented by the following Formula 1 and including a trimethylenemethane-based ligand (L1) and three carbonyl ligands coordinated to divalent ruthenium. In Formula 1, the trimethylenemethane-based ligand L1 is represented by the following Formula 2: wherein a substituent R of the ligand L1 is hydrogen, or any one of an alkyl group, a cyclic alkyl group, an alkenyl group, an alkynyl group, and an amino group having a predetermined number of carbon atoms.

Abstract: The present invention relates to an organoruthenium compound raw material for a chemical deposition method. An organoruthenium compound is represented by the following Formula 1 in which a trimethylenemethane-based ligand (L1), and two carbonyl ligands and a ligand X coordinate to divalent ruthenium. In Formula 1, the trimethylenemethane-based ligand (L1) is represented by the following Formula 2. Besides, the ligand X is any one of an isocyanide ligand, a pyridine ligand, an amine ligand, an imidazole ligand, a pyridazine ligand, a pyrimidine ligand, and a pyrazine ligand. wherein a substituent R of the ligand L1 is hydrogen, or any one of an alkyl group, a cyclic alkyl group, an alkenyl group, an alkynyl group, and an amino group having a predetermined number of carbon atoms.

Abstract: The present invention relates to a raw material of an organoruthenium compound for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method. This organoruthenium compound is an organoruthenium compound represented by the following Formula 1 and including a trimethylenemethane-based ligand (L1) and three carbonyl ligands coordinated to divalent ruthenium. In Formula 1, the trimethylenemethane-based ligand L1 is represented by the following Formula 2: wherein a substituent R of the ligand L1 is hydrogen, or any one of an alkyl group, a cyclic alkyl group, an alkenyl group, an alkynyl group, and an amino group having a predetermined number of carbon atoms.

Abstract: A raw material for chemical deposition for producing a manganese thin film or a manganese compound thin film by chemical deposition method, including an organomanganese compound represented Chemical Formula 1 in which a cyclopentadienyl ligand and an isocyanide ligand are coordinated to manganese, which has basic characteristics as a raw material for chemical deposition and enables formation of a manganese thin film with a reducing gas such as hydrogen used as a reaction gas.