Abstract: A TC wafer including a thermocouple is heated by irradiation with light from halogen lamps, and a temperature of the TC wafer is measured by the thermocouple. The true temperature of the TC wafer measured by the thermocouple is converted into a voltage value using a voltage conversion table. A voltage value output from a radiation thermometer when the TC wafer is measured by the radiation thermometer is acquired. Emissivity is calculated based on the voltage value obtained by conversion of the true temperature of the TC wafer and the voltage value output from the radiation thermometer, and the calculated emissivity is set for the radiation thermometer. The emissivity is calculated based on the voltage value obtained by direct conversion of the true temperature of the TC wafer measured by the thermocouple, so that accurate emissivity can rapidly be calculated.

Abstract: A reflectance measurement part measures the reflectance of a back surface of a semiconductor wafer. An imaging parameter of a camera is adjusted based on the measured reflectance. The imaging parameter includes exposure time and sensitivity of the camera. The camera with the adjusted imaging parameter images the back surface of the semiconductor wafer to determine the presence or absence of a flaw from the obtained image data. The camera is able to perform appropriate imaging in accordance with the reflectance of the back surface of the semiconductor wafer. Thus, a flaw in the back surface of the semiconductor wafer is detected with reliability even if the reflectance of the back surface is varied due to the deposition of a thin film on the back surface.

Abstract: A substrate processing apparatus includes a plurality of dry processing modules, a wet processing module, and a main transporter. The dry processing module includes a load lock unit switching an atmospheric pressure state and a vacuum state, a dry processing unit performing dry processing on a substrate in a vacuum state, and a local transporter transporting a substrate between the load lock unit and the dry processing unit in a vacuum state. The wet processing module performs wet processing on the substrate. The main transporter transports the substrate into and out of the load lock unit in an atmospheric pressure state, and transports the substrate between the dry processing module and the wet processing module.

Abstract: A substrate processing apparatus includes a processing unit and a transporter. The transporter includes an end effector including a first hand and a second hand and a hand movement driver moving the end effector in a horizontal direction. The first elevating driver moves the first support member to each of a first processing height position where a first direct contact part of the first support member having contact with a lower surface of the substrate is located above the first hand, a second processing height position where the first direct contact part is located between the first hand and the second hand, and a third processing height position where the first direct contact part is located below the second hand.

Abstract: A reflectance measurement part measures the reflectance of a back surface of a semiconductor wafer. An imaging parameter of a camera is adjusted based on the measured reflectance. The imaging parameter includes exposure time and sensitivity of the camera. The camera with the adjusted imaging parameter images the back surface of the semiconductor wafer to determine the presence or absence of a flaw from the obtained image data. The camera is able to perform appropriate imaging in accordance with the reflectance of the back surface of the semiconductor wafer. Thus, a flaw in the back surface of the semiconductor wafer is detected with reliability even if the reflectance of the back surface is varied due to the deposition of a thin film on the back surface.

Abstract: A heat treatment apparatus is a heat treatment apparatus managing a dummy wafer. The heat treatment apparatus includes: a heat treatment part performing a heat treatment on the dummy wafer; a damage detection part detecting a damage of the dummy wafer; and a controller determining whether or not the dummy wafer can be used based on damage information detected by the damage detection part.

Abstract: An abnormality detection device for detecting a treatment abnormality in a semiconductor wafer to be heat-treated in a heat treatment apparatus is provided. The abnormality detection device includes a lower radiation thermometer for measuring a temperature of the semiconductor wafer being heat-treated, a treatment information acquisition part (sensors) for acquiring a plurality of pieces of treatment information having a correlation with the temperature measured by the lower radiation thermometer, and a detection part for dividing heat treatment of the semiconductor wafer into a plurality of phases (heat treatment phases F1 to F7) to detect a treatment abnormality in the semiconductor wafer, based on a plurality of learning models created for the respective phases (heat treatment phases F1 to F7), based on the temperature and the treatment information.

Abstract: Provided is a testing circuit including a voltage supply unit which generates an output voltage, a pulse generation unit which generates a pulse signal by using the output voltage from the voltage supply unit in a functional test of a device under test and supplies the pulse signal to a device under test, and a measurement circuit which adjusts a voltage or a current supplied to a device under test in a voltage application current measurement test or a current application voltage measurement test of a device under test to a test voltage or a test current and performs the voltage application current measurement test or the current application voltage measurement test by using the test voltage or the test current, in which the measurement circuit is connected at least between the voltage supply unit and the pulse generation unit.

Abstract: Provided is a testing circuit including a measurement circuit which generates an output voltage and performs a voltage application current measurement test of a device under test by using the output voltage, a pulse generation circuit which generates a pulse signal by using the output voltage of the measurement circuit in a functional test of a device under test to supply the pulse signal to a terminal of a device under test and causes the output voltage of the measurement circuit to pass therethrough in the voltage application current measurement test to supply the output voltage to a terminal of a device under test as a test voltage, and an output end feedback line which is connected to an output end side of the pulse generation circuit and feeds back a voltage on the output end side to the measurement circuit.

Abstract: A heat treatment apparatus is a heat treatment apparatus managing a dummy wafer. The heat treatment apparatus includes: a heat treatment part performing a heat treatment on the dummy wafer; a damage detection part detecting a damage of the dummy wafer; and a controller determining whether or not the dummy wafer can be used based on damage information detected by the damage detection part.

Abstract: The exhaust gas purification controller is applied to a system with a catalyst and a supply valve for urea water. The exhaust gas purification controller performs an abnormality diagnosis of the supply valve, and includes a urea water filling portion, a valve opening command portion and an abnormality determiner. The urea water filling portion drives the pump at a start of operation of the exhaust gas purification system to start filling the supply passage with the urea water. The valve opening command portion outputs a valve opening command when a urea water pressure in the supply passage exceeds a predetermined valve opening pressure after filling the supply passage is started. The abnormality determiner determines presence or absence of a sticking abnormality of the supply valve based on the urea water pressure after the output of the valve opening command.

Abstract: A method of pretreating a blood sample for measuring ATP of a pathogenic microorganism in blood, comprising: preparing a pellet of platelets and the pathogenic microorganism from the blood sample; and subjecting the pellet of platelets and the pathogenic microorganism to the following steps (A) to (C) in any order (including multiple simultaneous steps). A method of pretreating a cultured blood sample, wherein the method is a simplified method, does not comprise the following step (A), and comprises the steps (B) and (C) only simultaneously performed. (A) digesting cell membrane proteins of the platelets with a protease; (B) swelling the platelets in a hypotonic solution; and (C) disrupting cell membranes of the platelets with a detergent solution under a condition of suppressing an effect on the pathogenic microorganism.

Abstract: A heat treatment apparatus includes: a chamber housing a semiconductor wafer W; a halogen heating part and a flash heating part heating the semiconductor wafer; a plurality of sensors measuring a parameter relating to the heating of the semiconductor wafer; a storage part storing data measured by the plurality of sensors; and a calculation part predicting an output value of the first sensor in the plurality of sensors. The output value of the first sensor is predicted based on the data measured by the first sensor and the data measured by the second data in the plurality of sensors.

Abstract: An assistance device assists a maintenance work for one or a plurality of substrate processing apparatuses. Further, the assistance device acquires deviation degree information. The deviation degree information represents respective degrees of deviation between a plurality of respective processing information pieces and a plurality of actually collected respective processing information pieces. The plurality of respective processing information pieces are predicted based on invariant relationships in regard to a plurality of processing information pieces representing operations or states related to a process for a substrate in each of one or a plurality of substrate processing apparatuses and a plurality of processing information pieces that are actually collected from the substrate processing apparatus. Further, the assistance device generates assistance information related to a maintenance work for the substrate processing apparatus based on the deviation degree information.

Abstract: A propriety determination device includes a dummy information generator that generates dummy information by replacing at least part of the plurality of processing information pieces collected from the substrate processing apparatus with a dummy data piece and provides the dummy information to the information analysis device, and a determiner that determines whether a detecting operation of the information analysis device is proper by determining whether the invariant relationships set in the information analysis device are adapted to the substrate processing apparatus based on whether, in a case in which the dummy information is provided to the information analysis device by the dummy information generator, an abnormality in the substrate processing apparatus has been detected by the information analysis device.

Abstract: A substrate processing apparatus management system includes an information analysis device including a model generator that generates a representative model representing correlations in regard to a plurality of processing information pieces representing operations or states relating to a substrate process in a representative chamber among a plurality of chambers, and an assistance device that acquires a plurality of processing information pieces for each of the plurality of chambers, and generates assistance information relating to a maintenance work for another chamber based on comparison information in which correlations in regard to a plurality of processing information pieces for the other chamber are compared with a representative model.

Abstract: A plurality of processing information pieces representing operations or states relating to a process for a substrate are collected from each of a plurality of substrate processing apparatuses. In regard to each substrate processing apparatus, a degree of abnormality of the substrate processing apparatus is calculated as an abnormality score based on a plurality of processing information pieces collected from the substrate processing apparatus and invariant relationships in regard to a plurality of processing information pieces. A management device accepts an inspection request in regard to an abnormality transmitted from each substrate processing apparatus. When two or more inspection requests are accepted, the abnormality scores of the substrate processing apparatuses corresponding to these inspection requests are acquired.

Abstract: Preheating is performed on a semiconductor wafer by irradiation with light from halogen lamps in a treatment chamber, and heating treatment is thereafter performed on the semiconductor wafer by irradiation with a flash of light from flash lamps. A controller transmits an advance notice signal to a planning part at a time that is a certain amount of time before the time at which the heating treatment of the semiconductor wafer is completed in the treatment chamber. The planning part executes replanning of transport so that the transport operation being performed by a transport robot when receiving the advance notice signal is followed by the transport of the semiconductor wafer from the treatment chamber. The planning part executes the replanning of the transport each time the heating treatment of a semiconductor wafer is performed. Thus, the transport of the semiconductor wafer is adjusted automatically and rapidly.

Abstract: The exhaust gas purification controller is applied to a system with a catalyst and a supply valve for urea water. The exhaust gas purification controller performs an abnormality diagnosis of the supply valve, and includes a urea water filling portion, a valve opening command portion and an abnormality determiner. The urea water filling portion drives the pump at a start of operation of the exhaust gas purification system to start filling the supply passage with the urea water. The valve opening command portion outputs a valve opening command when a urea water pressure in the supply passage exceeds a predetermined valve opening pressure after filling the supply passage is started. The abnormality determiner determines presence or absence of a sticking abnormality of the supply valve based on the urea water pressure after the output of the valve opening command.

Abstract: A reflectance measurement part measures the reflectance of a back surface of a semiconductor wafer. An imaging parameter of a camera is adjusted based on the measured reflectance. The imaging parameter includes exposure time and sensitivity of the camera. The camera with the adjusted imaging parameter images the back surface of the semiconductor wafer to determine the presence or absence of a flaw from the obtained image data. The camera is able to perform appropriate imaging in accordance with the reflectance of the back surface of the semiconductor wafer. Thus, a flaw in the back surface of the semiconductor wafer is detected with reliability even if the reflectance of the back surface is varied due to the deposition of a thin film on the back surface.