Abstract: To provide an Al connection material that may suppress generation of internal cracks at the time of manufacture and exhibits excellent temperature cycle reliability. The Al connection material containing 3.0% by mass or more and 12.0% by mass or less of Si, and containing 5 mass ppm or more and 800 mass ppm or less of one or more of Sr, Na, Eu, and Ca in total.

Abstract: To provide an Al connection material that may suppress generation of internal cracks at the time of manufacture and exhibits excellent temperature cycle reliability. An Al connection material containing 3.0% by mass or more and 12.0% by mass or less of Si, in which an average value of a ratio between a short side length c and a long side length d (c/d) of an Al phase in an L cross-section (cross section in a center axis direction including a center axis) of the Al connection material is equal to or larger than 0.25 and equal to or smaller than 0.7, and an average value of a ratio between a short side length e and a long side length f (e/f) of a Si phase in the L cross-section of the Al connection material is equal to or larger than 0.2 and equal to or smaller than 0.7.

Abstract: To provide an Al bonding wire exhibiting a favorable high-temperature and high-humidity service life in a high-temperature and high-humidity environment required for next-generation vehicle-mounted power devices. The Al bonding wire for semiconductor devices containing equal to or larger than 3 mass ppm and equal to or smaller than 500 mass ppm of one or more of Pd and Pt in total, in which, as a result of measuring a crystal orientation on a cross section parallel to a wire axis direction including a wire axis of the bonding wire, an orientation ratio of a <100> crystal orientation angled at 15 degrees or less to the wire axis direction is equal to or higher than 30% and equal to or lower than 90%.

Abstract: There is provided a novel Al wiring material that achieves both of a suppression of chip damage and a thermal shock resistance. In aspect 1, the Al wiring material includes an Al core material and an Al coating layer formed on a surface of the Al core material, and satisfies 1.2?H1h/H1s where H1h is a Vickers hardness of the Al core material (Hv) and H1s is a Vickers hardness of the Al coating layer (Hv). In aspect 2, the Al wiring material includes an Al core material and an Al coating layer formed on a surface of the Al core material, and satisfies 1.2?H2h/H2s where H2s is a Vickers hardness of the Al core material (Hv) and H2h is a Vickers hardness of the Al coating layer (Hv).

Abstract: There is provided a novel Ag alloy bonding wire for semiconductor devices which provides an excellent bonded ball shape during ball bonding, which is required for high-density packaging. The Ag alloy bonding wire for semiconductor devices is made of an Ag alloy that contains one or more elements selected from the group consisting of Te, Bi and Sb and that satisfies at least one of the following conditions (1) to (3): (1) a concentration of Te is 5 to 500 at. ppm; (2) a concentration of Bi is 5 to 500 at. ppm; and (3) a concentration of Sb is 5 to 1,500 at. ppm.

Abstract: An oscillator includes a resonator element, an oscillation circuit configured to cause the resonator element to oscillate, a temperature control element configured to control a temperature of the resonator element, a plurality of temperature sensors, a failure detection circuit, and a container configured to accommodate the resonator element, the oscillation circuit, the temperature control element, the plurality of temperature sensors, and the failure detection circuit. The failure detection circuit performs failure detection for the plurality of temperature sensors and the temperature control element based on output values of the plurality of temperature sensors in a state where the temperature control element operates.

Abstract: In a copper alloy bonding wire for semiconductor devices, the bonding longevity of a ball bonded part under high-temperature and high-humidity environments is improved. The copper alloy bonding wire for semiconductor devices includes in total 0.03% by mass or more to 3% by mass or less of at least one or more kinds of elements selected from Ni, Zn, Ga, Ge, Rh, In, Ir, and Pt (first element), with the balance Cu and inevitable impurities. The inclusion of a predetermined amount of the first element suppresses production of an intermetallic compound susceptible to corrosion under high-temperature and high-humidity environments at the wire bonding interface and improves the bonding longevity of a ball bonded part.

Abstract: There is provided a bonding wire for semiconductor devices that exhibits a favorable bondability even when being applied to wedge bonding at the room temperature, and also achieves an excellent bond reliability. The bonding wire includes a core material of Cu or Cu alloy (hereinafter referred to as a “Cu core material”), and a coating containing a noble metal formed on a surface of the Cu core material. A concentration of Cu at a surface of the wire is 30 to 80 at %.

Abstract: There is provided an Al bonding wire which can achieve a sufficient bonding reliability of bonded parts of the bonding wire under a high temperature state where a semiconductor device using the Al bonding wire is operated. The Al bonding wire contains 0.01 to 1% of Sc, and further contains 0.01 to 0.1% in total of at least one or more of Y, La, Ce, Pr and Nd. With regard to the Al bonding wire, a recrystallization temperature thereof is increased, so that the proceeding of recrystallization of the bonding wire can be suppressed, and strength of the wire can be prevented from being decreased even when the semiconductor device is continuously used under a high temperature environment. Accordingly, the Al bonding wire can sufficiently secure the reliability of the bonded parts after a high-temperature long-term hysteresis.

Abstract: To provide an Al bonding wire satisfying excellent temperature cycle reliability and a favorable 1st bondability. The Al bonding wire contains 3.0% by mass or more and 10.0% by mass or less of Si, and an average diameter of a Si phase in a cross section (L cross-section) in a center axis direction including a wire center axis of the Al alloy bonding wire is equal to or larger than 0.8 ?m and equal to or smaller than 5.5 ?m.

Abstract: There is provided a novel Cu bonding wire for semiconductor devices that achieves a favorable shape stability of a 2nd bonded part.

Abstract: There is provided an Ag alloy bonding wire for semiconductor devices which exhibits a favorable bond reliability in a high-temperature environment even when using a mold resin of high S content and can suppress a chip damage at the time of ball bonding. The Ag alloy bonding wire is characterized by containing at least one element selected from the group consisting of Pd and Pt (hereinafter referred to as a “first element”) and at least one element selected from the group consisting of P, Cr, Zr and Mo (hereinafter referred to as a “second element”) so as to satisfy 0.05?x1?3.0, and 15?x2?700 where x1 is a total concentration of the first element [at. %] and x2 is a total concentration of the second element [at. ppm], with the balance including Ag.

Abstract: An oscillator includes a resonator element, a temperature control element that controls a temperature of the resonator element, a microcontroller that stores a temperature control program and controls an operation of the temperature control element based on the temperature control program, and an interface circuit, in which the temperature control program is rewritable via the interface circuit.

Abstract: There is provided a copper bonding wire having an improved storage life in the atmosphere. There is specifically provided a copper bonding wire for semiconductor devices characterized in that a density of crystal grain boundary on a surface of the wire is 0.6 (?m/?m2) or more and 1.6 (?m/?m2) or less.

Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers, a memory opening vertically extending through the alternating stack, and a memory opening fill structure located in the memory opening and including a set of dielectric-metal-oxide blocking dielectric portions located at levels of the electrically conductive layers, a memory material layer, and a vertical semiconductor channel. Each of the electrically conductive layers includes a tubular metal nitride portion and a metal fill material portion, each of the tubular metal nitride portions laterally surrounds and contacts a respective one of the dielectric-metal-oxide blocking dielectric portions, and each metal fill material portion either contacts respective overlying and underlying insulating layers of the insulating layers, or contacts respective upper and lower metal nitride liner portions which have a smaller thickness than the tubular metal nitride portions.

Abstract: Bonding wire for semiconductor devices contains one or more of Be, B, P, Ca, Y, La, and Ce in a total of 0.031 at % to obtain a 0.180 at %, further contains one or more of In, Ga, and Cd in a total of 0.05 at % to 5.00 at %, and has a balance of Ag and unavoidable impurities. Due to this, it is possible to obtain a bonding wire for semiconductor devices sufficiently forming an intermetallic compound layer at a ball bond interface to secure the bond strength of the ball bond, not causing neck damage even in a low loop, having a good leaning characteristic, and having a good FAB shape.

Abstract: There is provided an Al bonding wire which can achieve a sufficient bonding reliability of bonded parts of the bonding wire under a high temperature state where a semiconductor device using the Al bonding wire is operated. The Al bonding wire is characterized in that the wire contains 0.02 to 1% by mass of Fe, further contains 0.05 to 0.5% by mass in total of at least one or more of Mn and Cr, and the balance includes Al and inevitable impurities, wherein a total content of Fe, Mn and Cr in solid solution is 0.01 to 1% by mass. The Al bonding wire contains Mn and Cr in addition to Fe, so that Fe, Mn and Cr can be promoted to form a solid solution in quenching treatment after the solution treatment. Accordingly, the Al bonding wire can achieve an effect of solid-solution strengthening of the wire due to the increase in the total content of Fe, Mn and Cr in solid solution and an effect of preventing recrystallization from proceeding during use of the semiconductor device at a high temperature for a long time.

Abstract: A circuit apparatus includes: a first oscillation circuit configured to generate a first clock signal; a PLL circuit including a second oscillation circuit configured to generate a second clock signal and a frequency control voltage generation circuit configured to generate a frequency control voltage for controlling a frequency of the second clock signal, the PLL circuit being configured to synchronize a phase of the second clock signal with a phase of the first clock signal; and a failure detection circuit configured to monitor the frequency control voltage and detect whether there is a possibility that the frequency control voltage deviates from a predetermined voltage range in which the second oscillation circuit is capable of operating normally.

Abstract: An oscillator includes a resonator element, an oscillation circuit configured to cause the resonator element to oscillate, a temperature control element configured to control a temperature of the resonator element, a plurality of temperature sensors, a failure detection circuit, and a container configured to accommodate the resonator element, the oscillation circuit, the temperature control element, the plurality of temperature sensors, and the failure detection circuit. The failure detection circuit performs failure detection for the plurality of temperature sensors and the temperature control element based on output values of the plurality of temperature sensors in a state where the temperature control element operates.

Abstract: There is provided a copper bonding wire that exhibits a favorable bondability even when a scrub at the time of bonding is reduced. The copper bonding wire is characterized in that when a sum of percentages of Cu, Cu2O, CuO and Cu(OH)2 on a surface of the wire as measured by X-ray Photoelectron Spectroscopy (XPS) is defined as 100%, Cu[II]/Cu[I] which is a ratio of a total percentage of CuO and Cu(OH)2 (Cu[II]) corresponding to bivalent Cu to a percentage of Cu2O (Cu[I]) corresponding to monovalent Cu falls within a range from 0.8 to 12.