Abstract: A semiconductor device having a copper wiring and an insulating layer provided on the copper wiring, where after storage in air with a humidity of 5% for 168 hours at 150° C., the area of void portion of the copper wiring is 10% or less at the copper wiring surface in contact with the insulating layer. The insulating layer contains at least one polyimide that has (i) a structure derived from 4,4?-oxydiphthalic acid dianhydride and a structure derived from 4,4?-diaminodiphenyl ether; or (ii) a structure derived from 3,3?4,4?-biphenyltetracarboxylic acid dianhydride and a structure derived from 4,4?-diaminodiphenyl ether; or (iii) a structure derived from 4,4?-oxydiphthalic acid dianhydride and a structure derived from 2,2?-dimethyl-4,4?-diaminobiphenyl.

Abstract: A negative-type photosensitive resin composition that has a satisfactory imidization rate and can yield a resin layer with high chemical resistance, even under low-temperature curing conditions of 200° C. or below, the negative-type photosensitive resin composition containing a photopolymerization initiator (B) in a proportion of 0.1 part by mass to 20 parts by mass with respect to 100 parts by mass of a polyimide precursor (A), the polyimide precursor (A) being a polyamic acid ester or polyamic acid salt with a specific structure, and the weight-average molecular weight (Mw) of the polyimide precursor (A) being 3,000 or greater and less than 16,000, in terms of polystyrene, according to gel permeation chromatography (GPC).

Abstract: A negative-type photosensitive resin composition that has a satisfactory imidization rate and can yield a resin layer with high chemical resistance, even under low-temperature curing conditions of 200° C. or below, the negative-type photosensitive resin composition containing a photopolymerization initiator (B) in a proportion of 0.1 part by mass to 20 parts by mass with respect to 100 parts by mass of a polyimide precursor (A), the polyimide precursor (A) being a polyamic acid ester or polyamic acid salt with a specific structure, and the weight-average molecular weight (Mw) of the polyimide precursor (A) being 3,000 or greater and less than 16,000, in terms of polystyrene, according to gel permeation chromatography (GPC).

Abstract: A semiconductor device having a copper wiring and an insulating layer provided on the copper wiring, where after storage in air with a humidity of 5% for 168 hours at 150° C., the area of void portion of the copper wiring is 10% or less at the copper wiring surface in contact with the insulating layer. The insulating layer contains at least one polyimide that has (i) a structure derived from 4,4?-oxydiphthalic acid dianhydride and a structure derived from 4,4?-diaminodiphenyl ether; or (ii) a structure derived from 3,3?4,4?-biphenyltetracarboxylic acid dianhydride and a structure derived from 4,4?-diaminodiphenyl ether; or (iii) a structure derived from 4,4?-oxydiphthalic acid dianhydride and a structure derived from 2,2?-dimethyl-4,4?-diaminobiphenyl.

Abstract: A negative-type photosensitive resin composition that has a satisfactory imidization rate and can yield a resin layer with high chemical resistance, even under low-temperature curing conditions of 200° C. or below, the negative-type photosensitive resin composition containing a photopolymerization initiator (B) in a proportion of 0.1 part by mass to 2.

Abstract: A negative-type photosensitive resin composition that has a satisfactory imidization rate and can yield a resin layer with high chemical resistance, even under low-temperature curing conditions of 200° C. or below, the negative-type photosensitive resin composition containing a photopolymerization initiator (B) in a proportion of 0.1 part by mass to 20 parts by mass with respect to 100 parts by mass of a polyimide precursor (A), the polyimide precursor (A) being a polyamic acid ester or polyamic acid salt with a specific structure, and the weight-average molecular weight (Mw) of the polyimide precursor (A) being 3,000 or greater and less than 16,000, in terms of polystyrene, according to gel permeation chromatography (GPC).

Abstract: A photosensitive resin composition containing a resin and a compound each having a structure specified by the present specification provides a cured film having excellent adhesiveness to copper wiring.

Abstract: A photosensitive resin composition containing a resin and a compound each having a structure specified by the present specification provides a cured film having excellent adhesiveness to copper wiring.

Abstract: A semiconductor device having a copper wiring and an insulating layer provided on the copper wiring, where after storage in air with a humidity of 5% for 168 hours at 150° C., the area of void portion of the copper wiring is 10% or less at the copper wiring surface in contact with the insulating layer. The insulating layer contains at least one polyimide that has (i) a structure derived from 4,4?-oxydiphthalic acid dianhydride and a structure derived from 4,4?-diaminodiphenyl ether; or (ii) a structure derived from 3,3?4,4?-biphenyltetracarboxylic acid dianhydride and a structure derived from 4,4?-diaminodiphenyl ether; or (iii) a structure derived from 4,4?-oxydiphthalic acid dianhydride and a structure derived from 2,2?-dimethyl-4,4?-diaminobiphenyl.

Abstract: A photosensitive resin composition, ensuring that after a high-temperature storage test, a void is less likely to be generated at the interface of a Cu layer in contact with a polyimide layer and a high-adhesion polyimide layer is obtained, and a polyimide using the photosensitive resin composition, can be provided. Furthermore, a semiconductor device in which after a high-temperature storage test, a void is less likely to be generated at the interface of a Cu layer in contact with a polyimide layer and short circuiting or disconnection following a high-temperature storage test is unlikely to occur. A photosensitive resin composition is characterized by including a component (A) as a photosensitive polyimide precursor, and a component (B) containing a structure represented by formula (B1). (In formula (B1), Z is a sulfur or oxygen atom, and each of R1 to R4 independently represents a hydrogen atom or a monovalent organic group).

Abstract: A photosensitive resin composition containing a resin and a compound each having a structure specified by the present specification provides a cured film having excellent adhesiveness to copper wiring.

Abstract: A photosensitive resin composition, ensuring that after a high-temperature storage test, a void is less likely to be generated at the interface of a Cu layer in contact with a polyimide layer and a high-adhesion polyimide layer is obtained, and a polyimide using the photosensitive resin composition, can be provided. Furthermore, a semiconductor device in which after a high-temperature storage test, a void is less likely to be generated at the interface of a Cu layer in contact with a polyimide layer and short circuiting or disconnection following a high-temperature storage test is unlikely to occur. A photosensitive resin composition is characterized by including a component (A) as a photosensitive polyimide precursor, and a component (B) containing a structure represented by formula (B1). (In formula (B1), Z is a sulfur or oxygen atom, and each of R1 to R4 independently represents a hydrogen atom or a monovalent organic group).

Abstract: A negative-type photosensitive resin composition that has a satisfactory imidization rate and can yield a resin layer with high chemical resistance, even under low-temperature curing conditions of 200° C. or below, the negative-type photosensitive resin composition containing a photopolymerization initiator (B) in a proportion of 0.1 part by mass to 20 parts by mass with respect to 100 parts by mass of a polyimide precursor (A), the polyimide precursor (A) being a polyamic acid ester or polyamic acid salt with a specific structure, and the weight-average molecular weight (Mw) of the polyimide precursor (A) being 3,000 or greater and less than 16,000, in terms of polystyrene, according to gel permeation chromatography (GPC).

Abstract: Disclosed are: a resin composition for pattern formation, which enables the stable formation of a pattern at a level of the wavelength of light; a method for forming a pattern having a sea-island structure using the composition; and a process for producing a light-emitting element that can achieve high luminous efficiency properties.

Abstract: A photosensitive resin composition is used that comprises a photosensitive silicone having a styryl group as a photosensitive group, and a photopolymerization initiator having a specific structure. As a result, a photosensitive resin composition capable of being cured in air by photopolymerization that is preferable for use as a buffer coat material or rewiring layer of an LSI chip, a method for forming a cured relief pattern using this photosensitive resin composition, and a semiconductor device comprising the cured relief pattern are provided.

Abstract: Disclosed are: a resin composition for pattern formation, which enables the stable formation of a pattern at a level of the wavelength of light; a method for forming a pattern having a sea-island structure using the composition; and a process for producing a light-emitting element that can achieve high luminous efficiency properties.

Abstract: A photosensitive resin composition comprising a photosensitive silicone compound of specified molecular weight having any of specified photosensitive substituents and a photopolymerization initiator in any of specified proportions is used. Thus, there can be obtained a resin composition containing a photosensitive silicone compound that provides a material suitable for a rewiring layer or a buffer coat material of LSI chip, less in a film loss between before and after curing and improved in the stickiness of pre-exposure stage. Further, there can be obtained a resin insulating film utilizing the resin composition.

Abstract: A photosensitive resin composition comprising a photosensitive silicone compound of specified molecular weight having any of specified photosensitive substituents and a photopolymerization initiator in any of specified proportions is used. Thus, there can be obtained a resin composition containing a photosensitive silicone compound that provides a material suitable for a rewiring layer or a buffer coat material of LSI chip, less in a film loss between before and after curing and improved in the stickiness of pre-exposure stage. Further, there can be obtained a resin insulating film utilizing the resin composition.

Abstract: A photosensitive resin composition is used that comprises a photosensitive silicone having a styryl group as a photosensitive group, and a photopolymerization initiator having a specific structure. As a result, a photosensitive resin composition capable of being cured in air by photopolymerization that is preferable for use as a buffer coat material or rewiring layer of an LSI chip, a method for forming a cured relief pattern using this photosensitive resin composition, and a semiconductor device comprising the cured relief pattern are provided.

Abstract: Disclosed is a polyorganosiloxane composition containing the following components (a)-(c). (a) 100 parts by mass of a polyorganosiloxane obtained by mixing at least one silanol compound represented by the general formula (1) below, at least one alkoxysilane compound represented by the general formula (2) below, and at least one catalyst selected from the group consisting of compounds represented by the general formula (3) below, compounds represented by the general formula (4) below and Ba(OH)2, and polymerizing the mixture without actively adding water thereinto [chemical formula 1] R2Si(OH)2 (1) [chemical formula 2] R?Si(OR?)3 (2) (chemical formula 3] M(OR??)4 (3) [chemical formula 4] M?(OR??)3 (4) (b) 0.1-20 parts by mass of a photopolymerization initiator (c) 1-100 parts by mass of a compound other than the component (a) having two or more photopolymerizable unsaturated bonding groups.