Abstract: A piezoelectric thin film-stacked body is provided. A piezoelectric thin film-stacked body has a first electrode layer, a first oxide layer stacked on the first electrode layer, a second oxide layer stacked on the first oxide layer, and a piezoelectric thin film stacked on the second oxide layer, the electrical resistivity of the first oxide layer is higher than the electrical resistivity of the second oxide layer, the first oxide layer includes K, Na, and Nb, and the piezoelectric thin film includes (K,Na)NbO3.

Abstract: A piezoelectric ceramic sputtering target containing a perovskite type oxide represented by chemical formula (I) of ABO3 as a main component, wherein the component A of the chemical formula (I) contains at least K (potassium) and/or Na (sodium), the component B of the chemical formula (I) contains at least Nb (niobium), the piezoelectric ceramic sputtering target is composed of a plurality of crystal grains; and the average particle diameter of the crystal grains is larger than 3 ?m and not larger than 30 ?m.

Abstract: A piezoelectric ceramic sputtering target containing a perovskite type oxide represented by chemical formula (I) of ABO3 as a main component, wherein the component A of the chemical formula (I) contains at least K (potassium) and/or Na (sodium), the component B of the chemical formula (I) contains at least one selected from the group consisting of Nb (niobium), Ta (tantalum) and Zr (zirconium) with Nb (niobium) as a necessity, the piezoelectric ceramic sputtering target is composed of a plurality of crystal grains and grain boundaries existing among the crystal grains, and in the grain boundary, the molar ratio of at least one of Nb (niobium), Ta (tantalum), and Zr (zirconium) in the B components is higher than the molar ratio in the interior of the crystal grains by 30% or more.

Abstract: A piezoelectric thin film-stacked body is provided. A piezoelectric thin film-stacked body has a first electrode layer, a first oxide layer stacked on the first electrode layer, a second oxide layer stacked on the first oxide layer, and a piezoelectric thin film stacked on the second oxide layer, the electrical resistivity of the first oxide layer is higher than the electrical resistivity of the second oxide layer, the first oxide layer includes K, Na, and Nb, and the piezoelectric thin film includes (K,Na)NbO3.

Abstract: A piezoelectric ceramic sputtering target containing a perovskite type oxide represented by chemical formula (I) of ABO3 as a main component, wherein the component A of the chemical formula (I) contains at least K (potassium) and/or Na (sodium), the component B of the chemical formula (I) contains at least Nb (niobium), the piezoelectric ceramic sputtering target is composed of a plurality of crystal grains; and the average particle diameter of the crystal grains is larger than 3 ?m and not larger than 30 ?m.

Abstract: A piezoelectric ceramic sputtering target containing a perovskite type oxide represented by chemical formula (I) of ABO3 as a main component, wherein the component A of the chemical formula (I) contains at least K (potassium) and/or Na (sodium), the component B of the chemical formula (I) contains at least one selected from the group consisting of Nb (niobium), Ta (tantalum) and Zr (zirconium) with Nb (niobium) as a necessity, the piezoelectric ceramic sputtering target is composed of a plurality of crystal grains and grain boundaries existing among the crystal grains, and in the grain boundary, the molar ratio of at least one of Nb (niobium), Ta (tantalum), and Zr (zirconium) in the B components is higher than the molar ratio in the interior of the crystal grains by 30% or more.

Abstract: A piezoelectric device includes a first electrode film, a piezoelectric film disposed on the first electrode film, and a second electrode film disposed on the piezoelectric film. At least one of the first and second electrode films is composed of an alloy, and a main component of the alloy is a metal selected from the group consisting of Ti, Al, Mg, and Zn. The piezoelectric film has a main composition represented by (K1-x-y-w-vNaxLiyBawSrv)m(Nb1-z-uTazZru)O3 (1), where x, y, z, w, v, u, and m in formula (1) satisfy 0.4<x?0.7, 0.02?y?0.11, 0.5?x+y<0.75, 0<z?0.28, 0<w?0.02, 0.02?v?0.11, 0.02?u?0.11, and 0.95?m<1.2, and contains 1% by mass or less of MnO relative to the main composition.

Abstract: A piezoelectric ceramic with environmental friendliness including a composition as the main component composed of a composite oxide free from lead (Pb) as a constituent element, and with excellent piezoelectric characteristics such as the relative dielectric constant, the electromechanical coupling factor, and the piezoelectric constant, and a piezoelectric device using the piezoelectric ceramic, are provided. A piezoelectric ceramic including a composition represented by the following general formula as the main component: (K1-x-y-w-vNaxLiyBawSrv)m(Nb1-z-uTaz-Zru)O3 (wherein, x, y, z, w, v, u and m in the formula satisfy the following conditions respectively: 0.4<x?0.7; 0.02?y?0.1; 0<z?0.3; 0<w?0.01; 0.04?v?0.07; 0.04?u?0.07; and 0.95?m<1).

Abstract: A piezoelectric ceramic contains a major proportion of potassium sodium niobate and has a carbon content after firing of 55 to 1,240 ppm by mass.

Abstract: A piezoelectric device includes a first electrode film, a piezoelectric film disposed on the first electrode film, and a second electrode film disposed on the piezoelectric film. At least one of the first and second electrode films is composed of an alloy, and a main component of the alloy is a metal selected from the group consisting of Ti, Al, Mg, and Zn. The piezoelectric film has a main composition represented by (K1-x-y-w-vNaxLiyBawSrv)m(Nb1-z-uTazZru)O3 (1), where x, y, z, w, v, u, and m in formula (1) satisfy 0.4<x?0.7, 0.02?y?0.11, 0.5?x+y<0.75, 0<z?0.28, 0<w?0.02, 0.02?v?0.11, 0.02?u?0.11, and 0.95?m<1.2, and contains 1% by mass or less of MnO relative to the main composition.

Abstract: Provided is a piezoelectric ceramic composition which can increase Qmax of a resonator and inhibit the resonator from changing its oscillation frequency F0 under a low temperature environment. The piezoelectric ceramic composition has a structure represented by the following general formula (1): (Pb?Ln?Me?)(Ti1?(x+y+z)ZrxMnyNbz)O3??(1) where Ln is a lanthanoid element, Me is an alkaline-earth metal element, ?>0, ?>0, ??0, 0.965??+?+??1.000, 0.158?x?0.210, y?0, z?0, and 1?(x+y+z)>0.

Abstract: A piezoelectric ceramic composition excellent in all of the electric property Qmax, heat resisting properties and temperature characteristics of oscillation frequencies is provided. The piezoelectric ceramic composition comprises a phase mainly comprising lead zirconate titanate having a perovskite structure and an Al-containing phase. In the piezoelectric ceramic composition, the main component preferably comprises Mn and Nb, and is preferably represented by a composition formula of Pb?[(Mn1/3Nb2/3)xTiyZrz]O3 (wherein 0.97???1.01, 0.04?x?0.16, 0.48?y?0.58, 0.32?z?0.41).

Abstract: Provided is a piezoelectric ceramic composition which can increase Qmax of a resonator and inhibit the resonator from changing its oscillation frequency F0 under a low temperature environment. The piezoelectric ceramic composition has a structure represented by the following general formula (1): (Pb?Ln?Me?)(Ti1?(x+y+z)ZrxMnyNbz)O3??(1) where Ln is a lanthanoid element, Me is an alkaline-earth metal element, ?>0, ?>0, ??0, 0.965??+?+??1.000, 0.158?x?0.210, y?0, z?0, and 1?(x+y+z)>0.

Abstract: A piezoelectric ceramic composition is provided which contains Perovskite oxides expressed by General Formula 1 below and an aluminum compound, and in which the content ratio of the aluminum compound to the Perovskite oxides is from 1% by mass to 11% by mass, (Pb?-?-?-?M1?M2?Bi?)[Ti{1-(x+y+z)}ZrxMnyNbz]O3??(1) wherein in the General Formula (1), M1 represents at least one kind of element selected from the group consisting of La, Ce, Pr, and Nd, M2 represents at least one kind of element selected from the group consisting of Sr, Ca, and Ba, and ?, ?, ?, ?, x, y, and z satisfy the following numerical conditions: 0.96???1.01 0.03???0.07 0???0.10 0???0.02 0?x?0.24 0.02?y?0.04 0.03?z?0.

Abstract: Provided is a piezoelectric ceramic composition which enables the attainment of sufficiently high Qmax and good temperature characteristics of oscillation frequency F0 when applied in an oscillator utilizing third harmonic mode of thickness longitudinal vibration. The piezoelectric ceramic composition contains a composite oxide having a perovskite structure. The composite oxide has a composition expressed by the chemical formula (1), while satisfying 0.91???1.00, 0<??0.08, 0.125?x?0.300, 0.020?y?0.050, and 0.040?z?0.070 (Pb?Ln?)(Ti1?(x+y+z)ZrxMnyNbz)O3 ??(1) where Ln signifies at least one element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu.

Abstract: There are provided steps of polarizing a ceramic composition including a perovskite compound containing Pb, Zr, Ti and Mn as main components and a heat treatment step for keeping the polarized ceramic composition within a temperature range lower than Tc (Tc denoting the Curie temperature of the ceramic composition) for 1 to 100 minutes.

Abstract: There is provided a resonator having a piezoelectric ceramic resonator which has excellent free-fall resistance. The resonator comprises a piezoelectric ceramic resonator 2 with a vibrating electrode formed, and a substrate 3 which supports the piezoelectric ceramic resonator 2, wherein the piezoelectric ceramic resonator 2 satisfies the condition of U?0.88×H+20.28, wherein U=maximum elastic energy (kJ/m3) per unit volume, and H=drop height (m) (H>1). The present invention can be applied to a resonator 1, wherein the substrate 3 has terminal electrodes 31, 32, and the piezoelectric ceramic resonator 2 is in electrical continuity with the vibrating electrode and is supported on the substrate 3 at both ends via a conductive stator 4.

Abstract: Provided is a piezoelectric ceramic composition which enables the attainment of sufficiently high Qmax and good temperature characteristics of oscillation frequency F0 when applied in an oscillator utilizing third harmonic mode of thickness longitudinal vibration. The piezoelectric ceramic composition contains a composite oxide having a perovskite structure. The composite oxide has a composition expressed by the chemical formula (1), while satisfying 0.91???1.00, 0<??0.08, 0.125?x?0.300, 0.020?y?0.050, and 0.040?z?0.070. (Pb?Ln?)(Ti1?(x+y+z)ZrxMnyNbz)O3 ??(1) where Ln signifies at least one element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Th, Dy, Ho, Er, Tm, Yb, and Lu.

Abstract: To provide a method for producing a piezoelectric ceramic which can improve toughness thereof. Provided is a method for producing a piezoelectric ceramic which includes a step of polarizing a piezoelectric ceramic having a main component represented by a composition formula Pba[(MnbNbc)dTieZrf]O3, wherein a to f satisfy 0.98?a?1.01, 0.340?b?0.384, 0.616?c?0.660, 0.08?d?0.12, 0.500?e?0.540, 0.37?f?0.41, and bd+cd+e+f=1, and 1 to 10% by weight of Al in terms of Al2O3 as an additive, and heat-treating the polarized piezoelectric ceramic for 10 to 60 minutes in a range of 200 to 300° C. As a result of this heat treatment, toughness of the piezoelectric ceramic can be improved.

Abstract: To obtain a piezoelectric ceramic composition having extremely high heat resisting property. Provided is a piezoelectric ceramic composition comprising a main component represented by Pba[(MnbNbc)dTieZrf]O3 (wherein 0.98?a?1.01, 0.340?b?0.384, 0.616?c?0.660, 0.08?d?0.12, 0.500?e?0.540, 0.37?f?0.41, bd+cd+e+f=1), and 1 to 10% by weight of Al in terms of Al2O3 as an additive. Preferably, b is such that 0.345?b?0.375 and c is such that 0.625?c?0.655, and the Al as the additive is preferably 2 to 6% by weight in terms of Al2O3.