Abstract: A ceramic electronic device includes an element body including a ceramic layer and an internal electrode layer, and an external electrode formed on an end surface of the element body and electrically connected to at least one end of the internal electrode layer. The external electrode includes a baked electrode layer. The baked electrode layer includes a main component comprising copper and/or a copper alloy. The baked electrode layer includes a void. An inner wall surface defining the void is at least partly covered by a film comprising nickel and/or a nickel alloy.

Abstract: A ceramic electronic device including a ceramic body having ceramic layers and internal electrode layers stacked in alternating manner and a terminal electrode formed at an end face of the ceramic body. The terminal electrode includes a base electrode including a metal component and a glass component, an intermediate electrode layer including Ni and formed at an outer face of the base electrode layer, and an upper electrode layer including Pd or Au and formed at an outer face of the intermediate electrode layer. Also, a surface roughness Ra1 of the base electrode layer in the terminal electrode is 5.0 ?m or less; or the surface roughness Ra1 of the base electrode layer, a surface roughness Ra2 of the intermediate electrode layer, and a surface roughness Ra3 of the upper electrode layer satisfy a relationship of Ra1>Ra3?Ra2.

Abstract: The present invention relates to a ceramic electronic device including a ceramic body having ceramic layers and internal electrode layers stacked in alternating manner and a terminal electrode formed at an end face of the ceramic body. The terminal electrode includes a base electrode including a metal component and a glass component, an intermediate electrode layer including Ni and formed at an outer face of the base electrode layer, and an upper electrode layer including Pd or Au and formed at an outer face of the intermediate electrode layer. Also, a surface roughness Ra1 of the base electrode layer in the terminal electrode is 5.0 ?m or less; or the surface roughness Ra1 of the base electrode layer, a surface roughness Ra2 of the intermediate electrode layer, and a surface roughness Ra3 of the upper electrode layer satisfy a relationship of Ra1>Ra3?Ra2.

Abstract: To improve a mounting reliability while maintaining a thickness of the external electrode at a side face of a multilayer electronic component thin. The multilayer electronic component includes ceramic body in which ceramic layers and an external electrode formed to an end face of the ceramic body. The upper electrode layer includes an element having higher standard electrode potential than Cu. The external electrode includes an external electrode end part and an external electrode extension part which is integrally formed with the external electrode end part. 1.20?t2/t1?4.50 is satisfied in which t1 is a total thickness of a thickness of the intermediate electrode layer thickness and t2 is a length from an end of the base electrode layer to an end of the upper electrode layer along the first axis of the external electrode extension part connected by the conductive adhesive.

Abstract: A dielectric ceramic composition includes at least dielectric particles having a core-shell structure and segregation particles, a concentration of a rare earth compound in the segregation particle is twice or more than an average concentration of the rare earth compound in a shell part of the dielectric particle having the core-shell structure, an area occupied by the segregation particles is 0.1 to 1.1%, when a maximum particle size of the segregation particle is defined as rbmax, a minimum particle size of the segregation particle is defined as rbmin, and an average particle size of the dielectric particle having the core-shell structure is defined as ra, a relation of rbmax/ra?2.00 and rbmin/ra?0.25 is satisfied, and the segregation particles substantially do not include Mg.

Abstract: A multilayer ceramic composition showing good characteristics, even when electric intensity on dielectric layers is high and a stacked number of a multilayer ceramic capacitor is increased, and an electronic device thereof. Said composition comprises: a perovskite compound ABO3, and with respect to 100 moles of said compound, 0.6 or more to 1.4 or less moles of Ra2O3 in which Ra is at least one of Dy, Gd and Tb, 0.2 or more to 0.7 or less moles of Rb2O3 in which Rb is at least one of Ho and Y, and 0.2 or more to 0.7 or less moles of Rc2O3 in which Rc is at least one of Yb and Lu, in terms of each oxide, 0.6 or more to 1.6 or less moles of Mg oxide in terms of Mg, and 0.6 or more to less than 1.2 moles of Si included compound in terms of Si.

Abstract: A dielectric ceramic composition includes at least dielectric particles having a core-shell structure and segregation particles, a concentration of a rare earth compound in the segregation particle is twice or more than an average concentration of the rare earth compound in a shell part of the dielectric particle having the core-shell structure, an area occupied by the segregation particles is 0.1 to 1.1%, when a maximum particle size of the segregation particle is defined as rbmax, a minimum particle size of the segregation particle is defined as rbmin, and an average particle size of the dielectric particle having the core-shell structure is defined as ra, a relation of rbmax/ra?2.00 and rbmin/ra?0.25 is satisfied, and the segregation particles substantially do not include Mg.

Abstract: A multilayer ceramic composition showing good characteristics, even when electric intensity on dielectric layers is high and a stacked number of a multilayer ceramic capacitor is increased, and an electronic device thereof. Said composition comprises: a perovskite compound ABO3, and with respect to 100 moles of said compound, 0.6 or more to 1.4 or less moles of Ra2O3 in which Ra is at least one of Dy, Gd and Tb, 0.2 or more to 0.7 or less moles of Rb2O3 in which Rb is at least one of Ho and Y, and 0.2 or more to 0.7 or less moles of Rc2O3 in which Rc is at least one of Yb and Lu, in terms of each oxide, 0.6 or more to 1.6 or less moles of Mg oxide in terms of Mg, and 0.6 or more to less than 1.2 moles of Si included compound in terms of Si.

Abstract: A dielectric ceramic composition includes a compound having perovskite type crystal structure shown by a general formula ABO3, where A is at least one selected from Ba, Ca and Sr, and B is at least one selected from Ti and Zr. The dielectric ceramic composition includes, as subcomponents, an oxide of RA (Dy, Gd and Tb); an oxide of RB (Ho and Y); an oxide of RC (Yb and Lu); Mg oxide and an oxide including Si in terms of RA2O3, RB2O3, RC2O3, Mg and Si, respectively. Also, when contents of the oxide of RA, RB and RC with respect to 100 moles of the compound are defined as “?”, “?” and “?”, respectively, they satisfy relations of 1.2?(?/?)?5.0 and 0.5?(?/?)?10.0.

Abstract: A dielectric ceramic composition includes a compound having perovskite type crystal structure shown by a general formula ABO3, where A is at least one selected from Ba, Ca and Sr, and B is at least one selected from Ti and Zr, as a main component. The dielectric ceramic composition includes, as subcomponents, with respect to 100 moles of the compound, 1.0 to 2.5 moles of an oxide of RA (Dy, Gd and Tb); 0.2 to 1.0 mole of an oxide of RB (Ho and Y); 0.1 to 1.0 mole of an oxide of RC (Yb and Lu); 0.8 to 2.0 moles of Mg oxide and 1.2 to 3.0 moles of an oxide including Si in terms of RA2O3, RB2O3, RC2O3, Mg and Si, respectively. Also, when contents of the oxide of RA, RB and RC with respect to 100 moles of the compound are defined as “?”, “?” and “?”, respectively, the “?”, “?” and “?” satisfy relations of 2.5?(?/?)?5.0 and 1.0?(?/?)?10.0. According to the present invention, a dielectric ceramic composition having good properties can be provided.

Abstract: A dielectric ceramic composition includes a compound having perovskite type crystal structure shown by a general formula ABO3, where A is at least one selected from Ba, Ca and Sr, and B is at least one selected from Ti and Zr. The dielectric ceramic composition includes, as subcomponents, an oxide of RA (Dy, Gd and Tb); an oxide of RB (Ho and Y); an oxide of RC (Yb and Lu); Mg oxide and an oxide including Si in terms of RA2O3, RB2O3, RC2O3, Mg and Si, respectively. Also, when contents of the oxide of RA, RB and RC with respect to 100 moles of the compound are defined as “?”, “?” and “?”, respectively, they satisfy relations of 1.2?(?/?)?5.0 and 0.5?(?/?)?10.0.

Abstract: A dielectric ceramic composition includes a compound having perovskite type crystal structure shown by a general formula ABO3, where A is at least one selected from Ba, Ca and Sr, and B is at least one selected from Ti and Zr, as a main component. The dielectric ceramic composition includes, as subcomponents, with respect to 100 moles of the compound, 1.0 to 2.5 moles of an oxide of RA (Dy, Gd and Tb); 0.2 to 1.0 mole of an oxide of RB (Ho and Y); 0.1 to 1.0 mole of an oxide of RC (Yb and Lu); 0.8 to 2.0 moles of Mg oxide and 1.2 to 3.0 moles of an oxide including Si in terms of RA2O3, RB2O3, RC2O3, Mg and Si, respectively. Also, when contents of the oxide of RA, RB and RC with respect to 100 moles of the compound are defined as “?”, “?” and “?”, respectively, the “?”, “?” and “?” satisfy relations of 2.5?(?/?)?5.0 and 1.0?(?/?)?10.0. According to the present invention, a dielectric ceramic composition having good properties can be provided.