Patents by Inventor Tomohisa Kato
Tomohisa Kato has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20190049939Abstract: To provide a data processing device of production equipment that can generate data usable by an operator or an administrator by performing processing for a collected plurality of types of data. A data processing device includes a reference-data acquiring unit configured to acquire, in production equipment, reference data including information concerning time in which a reference for grouping of data operates, a target-data acquiring unit configured to acquire target data concerning a state of the production equipment detected by detectors provided in the production equipment, and a combined-data generating unit configured to generate, for each group of the reference data, combined data for each group obtained by combining, with the reference data, data detected in the same period of time as an operation period of time of the reference data in the target data.Type: ApplicationFiled: August 7, 2018Publication date: February 14, 2019Applicant: JTEKT CORPORATIONInventors: Tomohisa KATO, Akio Uchino, Toshihiko Yotsui, Yuki Ishigure, Asami Hara, Tatiana KUNDOZEROVA, Tatsuo Oshiumi
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Publication number: 20180355324Abstract: This invention relates to a method for screening for a growth-promoting factor for pluripotent stem cells with a conditioned medium which is generated by culturing feeder cells in a serum-free medium that contains L-ascorbic acid, insulin, transferrin, selenium, and sodium bicarbonate and does not contain a serum nor serum replacement; a method for growing pluripotent stem cells via feeder-free culture using the conditioned medium; and a method for growing pluripotent stem cells by carrying out feeder-free culture of pluripotent stem cells cultured in advance on feeder cells in the serum-free medium.Type: ApplicationFiled: August 2, 2018Publication date: December 13, 2018Applicants: KANEKA CORPORATION, NATIONAL HOSPITAL ORGANIZATIONInventors: Tomohisa KATO, Yonehiro KANEMURA, Tomoko SHOFUDA, Hayato FUKUSUMI
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Publication number: 20180320130Abstract: It is an object of the present invention to provide a cell culture medium capable of enhancing cell growth efficiency without using feeder cells, in particular which does not comprise serum. The present invention provides a cell culture medium which comprises growth arrest-specific 6 (GAS6) and does not comprise serum.Type: ApplicationFiled: July 10, 2018Publication date: November 8, 2018Applicants: KANEKA CORPORATION, NATIONAL HOSPITAL ORGANIZATIONInventors: Tomohisa KATO, Yonehiro KANEMURA, Tomoko SHOFUDA, Hayato FUKUSUMI
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Patent number: 10119920Abstract: There is provided a method that makes it possible to observe fine crystal defects using light of a visible region. The method includes illuminating a substrate with polarized parallel light and evaluating a crystal quality of at least a part of the substrate from an image obtained by light transmitted through or reflected by the substrate. The half width HW, the divergence angle DA, and the center wavelength CWL of the parallel light satisfy conditions given below 3?HW?100 0.1?DA?5 250?CWL?1600 where the center wavelength CWL and the half width HW are expressed in units of nm and the divergence angle DA is expressed in units of mrad.Type: GrantFiled: January 10, 2018Date of Patent: November 6, 2018Assignees: Fuji Electric Co., Ltd., Mipox CorporationInventors: Seiji Mizutani, Kenji Nakagawa, Tomohisa Kato, Kensuke Takenaka
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Patent number: 10114304Abstract: The toner binder of the present invention contains a crystalline resin (A) and a resin (B) that is a polyester resin or its modified resin, the polyester resin being obtained by reaction of an alcohol component (X) and a carboxylic acid component (Y) as raw materials, wherein a temperature (Tp) of the top of an endothermic peak derived from the crystalline resin (A) as measured by a differential scanning calorimeter (DSC) is in the range of 40° C. to 100° C., and endothermic peak areas S1 and S2 during heating satisfy the following equation. (S2/S1)×100?35??(1) S1 is an area of the endothermic peak derived from the crystalline resin (A) in the first heating process, and S2 is an area of the endothermic peak derived from the crystalline resin (A) in the second heating process, when the toner binder is heated, cooled, and heated.Type: GrantFiled: January 26, 2018Date of Patent: October 30, 2018Assignee: SANYO CHEMICAL INDUSTRIES, LTD.Inventors: Satoshi Utsui, Tomohisa Kato, Eiji Iwawaki, Hiroshi Odajima, Mana Sanpei, Yuko Sugimoto
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Publication number: 20180274125Abstract: The present invention provides a p-type 4H—SiC single crystal, which is doped with both aluminum and nitrogen, and has a nitrogen concentration of 2.0×1019/cm3 or more.Type: ApplicationFiled: September 29, 2016Publication date: September 27, 2018Applicants: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, SHOWA DENKO K.K., DENSO CORPORATIONInventors: Kazuma ETO, Tomohisa KATO, Hiromasa SUO, Yuichiro TOKUDA
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Patent number: 10073040Abstract: A method and a device or kit for detecting a nucleic acid, which enable simple and precise visual detection of a nucleic acid amplified by an nucleic acid amplification method, without necessity of special devices are provided. The method for detecting a nucleic acid in a sample comprises: contacting a sample with a dye to react with each other; and observing a substance produced by the reaction with visible light, and evaluating the presence or absence of a nucleic acid by eye. The device or kit for detecting a nucleic acid in a sample comprises: a carrier that holds a dye which can bind to a nucleic acid; a path for passing a sample through the carrier; and an evaluation part for observing a substance produced by the reaction between the sample and the dye with visible light, and evaluating the presence or absence of a nucleic acid by eye.Type: GrantFiled: February 15, 2013Date of Patent: September 11, 2018Assignee: KANEKA CORPORATIONInventors: Shigehiko Miyamoto, Tomohisa Kato, Koji Takahashi, Jun Tomono
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Patent number: 10066211Abstract: This invention relates to a method for screening for a growth-promoting factor for pluripotent stem cells with a conditioned medium which is generated by culturing feeder cells in a serum-free medium that contains L-ascorbic acid, insulin, transferrin, selenium, and sodium bicarbonate and does not contain a serum nor serum replacement; a method for growing pluripotent stem cells via feeder-free culture using the conditioned medium; and a method for growing pluripotent stem cells by carrying out feeder-free culture of pluripotent stem cells cultured in advance on feeder cells in the serum-free medium.Type: GrantFiled: June 3, 2014Date of Patent: September 4, 2018Assignees: KANEKA CORPORATION, NATIONAL HOSPITAL ORGANIZATIONInventors: Tomohisa Kato, Yonehiro Kanemura, Tomoko Shofuda, Hayato Fukusumi
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Publication number: 20180218916Abstract: A surface machining method for a single crystal SiC substrate, including: a step of mounting a grinding plate which includes a soft pad and a hard pad sequentially attached onto a base metal having a flat surface, a step of generating an oxidation product by using the grinding plate, and a step of grinding the surface while removing the oxidation product, wherein abrasive grains made of at least one metallic oxide that is softer than single crystal SiC and has a bandgap are fixed to the surface of the hard pad.Type: ApplicationFiled: March 26, 2018Publication date: August 2, 2018Applicant: SHOWA DENKO K.K.Inventors: Takanori KIDO, Tomohisa KATO
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Publication number: 20180195952Abstract: There is provided a method that makes it possible to observe fine crystal defects using light of a visible region. The method includes illuminating a substrate with polarized parallel light and evaluating a crystal quality of at least a part of the substrate from an image obtained by light transmitted through or reflected by the substrate. The half width HW, the divergence angle DA, and the center wavelength CWL of the parallel light satisfy conditions given below 3?HW?100 0.1?DA?5 250?CWL?1600 where the center wavelength CWL and the half width HW are expressed in units of nm and the divergence angle DA is expressed in units of mrad.Type: ApplicationFiled: January 10, 2018Publication date: July 12, 2018Inventors: Seiji Mizutani, Kenji Nakagawa, Tomohisa Kato, Kensuke Takenaka
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Publication number: 20180164708Abstract: The toner binder of the present invention contains a crystalline resin (A) and a resin (B) that is a polyester resin or its modified resin, the polyester resin being obtained by reaction of an alcohol component (X) and a carboxylic acid component (Y) as raw materials, wherein a temperature (Tp) of the top of an endothermic peak derived from the crystalline resin (A) as measured by a differential scanning calorimeter (DSC) is in the range of 40° C. to 100° C., and endothermic peak areas S1 and S2 during heating satisfy the following equation. (S2/S1)×100?35 ??(1) S1 is an area of the endothermic peak derived from the crystalline resin (A) in the first heating process, and S2 is an area of the endothermic peak derived from the crystalline resin (A) in the second heating process, when the toner binder is heated, cooled, and heated.Type: ApplicationFiled: January 26, 2018Publication date: June 14, 2018Applicant: SANYO CHEMICAL INDUSTRIES, LTD.Inventors: Satoshi UTSUI, Tomohisa KATO, Eiji IWAWAKI, Hiroshi ODAJIMA, Mana SANPEI, Yuko SUGIMOTO
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Publication number: 20180135002Abstract: A liquid injection method for injecting a liquid into a culture vessel includes tilting the culture vessel around a horizontal axis at a tilt angle (X°) of greater than 0° and 50° or less, wherein adherent cells are adhered to the culture vessel; and injecting the liquid into the culture vessel at a predetermined linear velocity (Y mm/s) via a wall surface of the culture vessel tilted at the tilt angle (X°), wherein the tilt angle (X) and the linear velocity (Y) satisfy the following (formula 1): Y?5.075X+123 (formula 1).Type: ApplicationFiled: December 21, 2017Publication date: May 17, 2018Applicants: Kaneka Corporation, Kyoto UniversityInventors: Tomohisa Kato, Kazuya Hamada, Haruhisa Inoue, Takayuki Kondo
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Patent number: 9960048Abstract: A surface machining method for a single crystal SiC substrate, including: a step of mounting a grinding plate which includes a soft pad and a hard pad sequentially attached onto a base metal having a flat surface, a step of generating an oxidation product by using the grinding plate, and a step of grinding the surface while removing the oxidation product, wherein abrasive grains made of at least one metallic oxide that is softer than single crystal SiC and has a bandgap are fixed to the surface of the hard pad.Type: GrantFiled: March 2, 2017Date of Patent: May 1, 2018Assignee: SHOWA DENKO K.K.Inventors: Takanori Kido, Tomohisa Kato
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Patent number: 9921505Abstract: The toner binder of the present invention contains a crystalline resin (A) and a resin (B) that is a polyester resin or its modified resin, the polyester resin being obtained by reaction of an alcohol component (X) and a carboxylic acid component (Y) as raw materials, wherein a temperature (Tp) of the top of an endothermic peak derived from the crystalline resin (A) as measured by a differential scanning calorimeter (DSC) is in the range of 40° C. to 100° C., and endothermic peak areas S1 and S2 during heating satisfy the following equation. (S2/S1)×100?35??(1) S1 is an area of the endothermic peak derived from the crystalline resin (A) in the first heating process, and S2 is an area of the endothermic peak derived from the crystalline resin (A) in the second heating process, when the toner binder is heated, cooled, and heated.Type: GrantFiled: May 7, 2015Date of Patent: March 20, 2018Assignee: SANYO CHEMICAL INDUSTRIES, LTD.Inventors: Satoshi Utsui, Tomohisa Kato, Eiji Iwawaki, Hiroshi Odajima, Mana Sanpei, Yuko Sugimoto
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Publication number: 20180012758Abstract: A method for manufacturing an epitaxial wafer comprising a silicon carbide substrate and a silicon carbide voltage-blocking-layer, the method includes: epitaxially growing a buffer layer on the substrate, doping a main dopant for determining a conductivity type of the buffer layer and doping an auxiliary dopant for capturing minority carriers in the buffer layer at a doping concentration less than the doping concentration of the main dopant, so that the buffer layer enhances capturing and extinction of the minority carriers, the minority carriers flowing in a direction from the voltage-blocking-layer to the substrate, so that the buffer layer has a lower resistivity than the voltage-blocking-layer, and so that the buffer layer includes silicon carbide as a main component; and epitaxially growing the voltage-blocking-layer on the buffer layer.Type: ApplicationFiled: September 22, 2017Publication date: January 11, 2018Applicant: FUJI ELECTRIC CO., LTD.Inventors: Hidekazu TSUCHIDA, Tetsuya MIYAZAWA, Yoshiyuki YONEZAWA, Tomohisa KATO, Kazutoshi KOJIMA, Takeshi TAWARA, Akihiro OTSUKl
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Patent number: 9816200Abstract: A silicon carbide powder which, when used as a raw material in a sublimation recrystallization method, enables improvement in productivity of a silicon carbide single crystal by exhibiting a high sublimation rate and allowing a small amount of silicon carbide to remain without being sublimated, and enables an increase in size of the silicon carbide single crystal (for example, a single crystal wafer). The silicon carbide powder has a Blaine specific surface area of from 250 cm2/g to 1,000 cm2/g and a ratio of a silicon carbide powder having a particle size of more than 0.70 mm and 3.00 mm or less of 50 vol % or more with respect to a total amount of the silicon carbide powder. When a silicon carbide powder accommodated in a crucible is heated to be sublimated, a silicon carbide single crystal is formed on a seed crystal provided on an undersurface of a lid.Type: GrantFiled: November 27, 2013Date of Patent: November 14, 2017Assignees: TAIHEIYO CEMENT CORPORATION, NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGYInventors: Kenta Masuda, Kouki Ichitsubo, Masakazu Suzuki, Kiyoshi Nonaka, Tomohisa Kato, Hideaki Tanaka
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Publication number: 20170226471Abstract: It is an object of the present invention to provide a cell culture medium capable of enhancing cell growth efficiency without using feeder cells, in particular wherein the cell culture medium does not comprise serum. According to the present invention, a cell culture medium comprising fibrin 5 and Zeta polypeptide is provided.Type: ApplicationFiled: August 19, 2015Publication date: August 10, 2017Applicants: KANEKA CORPORATION, NATIONAL HOSPITAL ORGANIZATIONInventors: Tomohisa KATO, Yonehiro KANEMURA, Tomoko SHOFUDA, Hayato FUKUSUMI
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Publication number: 20170184990Abstract: The toner binder of the present invention contains a crystalline resin (A) and a resin (B) that is a polyester resin or its modified resin, the polyester resin being obtained by reaction of an alcohol component (X) and a carboxylic acid component (Y) as raw materials, wherein a temperature (Tp) of the top of an endothermic peak derived from the crystalline resin (A) as measured by a differential scanning calorimeter (DSC) is in the range of 40° C. to 100° C., and endothermic peak areas S1 and S2 during heating satisfy the following equation. (S2/S1)×100?35??(1) S1 is an area of the endothermic peak derived from the crystalline resin (A) in the first heating process, and S2 is an area of the endothermic peak derived from the crystalline resin (A) in the second heating process, when the toner binder is heated, cooled, and heated.Type: ApplicationFiled: May 7, 2015Publication date: June 29, 2017Applicant: SANYO CHEMICAL INDUSTRIES, LTD.Inventors: Satoshi UTSUI, Tomohisa KATO, Eiji IWAWAKI, Hiroshi ODAJIMA, Mana SANPEI, Yuko SUGIMOTO
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Publication number: 20170178919Abstract: A surface machining method for a single crystal SiC substrate, including: a step of mounting a grinding plate which includes a soft pad and a hard pad sequentially attached onto a base metal having a flat surface, a step of generating an oxidation product by using the grinding plate, and a step of grinding the surface while removing the oxidation product, wherein abrasive grains made of at least one metallic oxide that is softer than single crystal SiC and has a bandgap are fixed to the surface of the hard pad.Type: ApplicationFiled: March 2, 2017Publication date: June 22, 2017Applicant: SHOWA DENKO K.K.Inventors: Takanori KIDO, Tomohisa KATO
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Patent number: 9620374Abstract: A surface machining method for a single crystal SiC substrate, including: a step of mounting a grinding plate which includes a soft pad and a hard pad sequentially attached onto a base metal having a flat surface, a step of generating an oxidation product by using the grinding plate, and a step of grinding the surface while removing the oxidation product, wherein abrasive grains made of at least one metallic oxide that is softer than single crystal SiC and has a bandgap are fixed to the surface of the hard pad.Type: GrantFiled: February 13, 2014Date of Patent: April 11, 2017Assignee: SHOWA DENKO K.K.Inventors: Takanori Kido, Tomohisa Kato