Abstract: A method for cutting apart a glass substrate is provided whereby scribing of the glass substrate is possible without being affected by the presence or thickness of a deposited film formed thereon and without scratching the deposited film. To treat a glass substrate having a deposited film, such as a thin film or resin film, formed on one surface thereof, there are provided a shaving device, which is a blade that removes strip-shaped portions of the deposited film to expose strip-shaped regions on the glass substrate, and a wheel cutter (14a) that forms scribed lines along the strip-shaped regions exposed on the glass substrate. The glass substrate is cut apart along the scribed lines.

Abstract: A method for cutting apart a glass substrate is provided whereby scribing of the glass substrate is possible without being affected by the presence or thickness of a deposited film formed thereon and without scratching the deposited film. To treat a glass substrate having a deposited film, such as a thin film or resin film, formed on one surface thereof, there are provided a shaving device, which is a blade that removes strip-shaped portions of the deposited film to expose strip-shaped regions on the glass substrate, and a wheel cutter (14a) that forms scribed lines along the strip-shaped regions exposed on the glass substrate. The glass substrate is cut apart along the scribed lines.

Abstract: A method for cutting apart a glass substrate is provided whereby scribing of the glass substrate is possible without being affected by the presence or thickness of a deposited film formed thereon and without scratching the deposited film. To treat a glass substrate having a deposited film, such as a thin film or resin film, formed on one surface thereof, there are provided a shaving device, which is a blade that removes strip-shaped portions of the deposited film to expose strip-shaped regions on the glass substrate, and a wheel cutter that forms scribed lines along the strip-shaped regions exposed on the glass substrate. The glass substrate is cut apart along the scribed lines.

Abstract: A method for cutting apart a glass substrate is provided whereby scribing of the glass substrate is possible without being affected by the presence or thickness of a deposited film formed thereon and without scratching the deposited film. To treat a glass substrate (1) having a deposited film (1a), such as a thin film or resin film, formed on one surface thereof, there are provided a shaving means (202), which is a blade that removes strip-shaped portions of the deposited film (1a) to expose strip-shaped regions on the glass substrate (1), and a wheel cutter (14a) that forms scribed lines along the strip-shaped regions exposed on the glass substrate (1). The glass substrate (1) is cut apart along the scribed lines.

Abstract: A thermal-type infrared radiation detector cell includes a diaphragm structural body that forms a gap of a predetermined width over a semiconductor substrate. The diaphragm structural body is capable of either providing metal wiring films that doubles as an infrared radiation reflector film or providing a high refractive index film having a thickness set to satisfy the expression d=&lgr;×{1/(4×n)}, where n is the refractive index of the high refractive index film, and &lgr; is the wavelengths of infrared rays. As a result, in the former option, no separate infrared radiation reflector film is required, whilst in the latter no separate infrared radiation absorption layer is required. This facilitates the manufacturing process and improves the sensitivity in infrared radiation detection.

Abstract: A magnetoresistive effect device is formed by layering a nonmagnetic Co oxide film, a pinned magnetization layer made of Co, a nonmagnetic layer made of Cu, a free magnetization layer made of NiFe in this order on a substrate made of glass or Si. By arranging the nonmagnetic Co oxide film in contact with the pinned magnetization layer, it is possible to produce a magnetoresistive effect device with a high saturation field and a high sensitivity.

Abstract: A magnetoresistance effect type thin film magnetic head includes a MR element having the electrical resistance changed according to a change in an applied signal magnetic field, a lead electrode for detecting a voltage change generated across the ends of the MR element in which a change in electrical resistance is generated, and high coercive force films for applying a weak magnetic field to the MR element. The high coercive force films are arranged in the proximity of the ends of the MR element and at a predetermined position between the ends. According to this structure, a weak magnetic field is applied in uniform over the entire MR element to facilitate unification of magnetic domain of the MR element even in the case of a long MR element.

Abstract: A Co-Cr perpendicular magnetic recording medium includes a chromium oxide film formed on a Co-Cr perpendicular magnetization film, and a SiO.sub.2 protective film formed on the chromium oxide film. The chromium oxide film is formed by conducting a heating treatment to the surface of the Co-Cr perpendicular magnetization film in an oxygen atmosphere of about 10 .sup.-4 to 10.sup.-3 Torr, at a temperature of about 300.degree. C. to 400.degree. C. for about two hours. The chromium oxide film has a thickness of about 20 to 200 .ANG.. The SiO.sub.2 protective film has a thickness greater than 50 .ANG., but the total thickness of the chromium oxide film and the SiO.sub.2 protective film is selected between 70 and 300 .ANG..

Abstract: A Co-Cr perpendicular magnetic recording medium includes a chromium oxide film formed on a Co-Cr perpendicular magnetization film, and a SiO.sub.2 protective film formed on the chromium oxide film. The chromium oxide film is formed by conducting a heating treatment to the surface of the Co-Cr perpendicular magnetization film in an oxygen atmosphere of about 10.sup.-4 to 10.sup.-3 Torr, at a temperature of about 300.degree. C. to 400.degree. C. for about two hours. The chromium oxide film has a thickness of about 20 to 200 .ANG.. The SiO.sub.2 protective film has a thickness greater than 50 .ANG., but the total thickness of the chromium oxide film and the SiO.sub.2 protective film is selected between 70 and 300 .ANG..