Patents by Inventor Tomohisa Konno
Tomohisa Konno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20150344739Abstract: A chemical mechanical polishing aqueous dispersion includes colloidal silica (A), an anionic water-soluble polymer (B), and at least one type of an alkanolamine salt (C) selected from the group consisting of an alkyl sulfate and an alkyl ether sulfate, the chemical mechanical polishing aqueous dispersion having a pH of 1 to 4.Type: ApplicationFiled: December 11, 2013Publication date: December 3, 2015Applicant: JSR CORPORATIONInventors: Yasutaka KAMEI, Yoshitaka MIYAZAKI, Tatsuya YAMANAKA, Tomohisa KONNO
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Publication number: 20140011360Abstract: A chemical mechanical polishing aqueous dispersion of the invention includes (A) a first water-soluble polymer having a weight average molecular weight of 500,000 to 2,000,000 and including a heterocyclic ring in its molecule, (B) a second water-soluble polymer or its salt having a weight average molecular weight of 1000 to 10,000 and including one group selected from a carboxyl group and a sulfonic group, (C) an oxidizing agent, and (D) abrasive grains, and has a pH of 7 to 12.Type: ApplicationFiled: September 16, 2013Publication date: January 9, 2014Applicant: JSR CORPORATIONInventors: Yuuji NAMIE, Tomohisa Konno, Masayuki Motonari, Hirotaka Shida, Akihiro Takemura
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Patent number: 8574330Abstract: A chemical mechanical polishing aqueous dispersion of the invention includes (A) a first water-soluble polymer having a weight average molecular weight of 500,000 to 2,000,000 and including a heterocyclic ring in its molecule, (B) a second water-soluble polymer or its salt having a weight average molecular weight of 1000 to 10,000 and including one group selected from a carboxyl group and a sulfonic group, (C) an oxidizing agent, and (D) abrasive grains, and has a pH of 7 to 12.Type: GrantFiled: September 27, 2007Date of Patent: November 5, 2013Assignee: JSR CorporationInventors: Yuuji Namie, Tomohisa Konno, Masayuki Motonari, Hirotaka Shida, Akihiro Takemura
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Patent number: 8524606Abstract: Planarization methods include depositing a mask material on top of an overburden layer on a semiconductor wafer. The mask material is planarized to remove the mask material from up areas of the overburden layer to expose the overburden layer without removing the mask material from down areas. The exposed overburden layer is wet etched and leaves a thickness remaining over an underlying layer. Remaining portions of the mask layer and the exposed portions of the overburden layer are planarized to expose the underlying layer.Type: GrantFiled: January 25, 2011Date of Patent: September 3, 2013Assignees: International Business Machines Corporation, JSR CorporationInventors: Leslie Charns, John M. Cotte, Jason E. Cummings, Lukasz J. Hupka, Dinesh R. Koli, Tomohisa Konno, Mahadevaiyer Krishnan, Michael F. Lofaro, Jakub W. Nalaskowski, Masahiro Noda, Dinesh K. Penigalapati, Tatsuya Yamanaka
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Patent number: 8513127Abstract: A planarization method includes planarizing a semiconductor wafer in a first chemical mechanical polish step to remove overburden and planarize a top layer leaving a thickness of top layer material over underlying layers. The top layer material is planarized in a second chemical mechanical polish step to further remove the top layer and expose underlying layers of a second material and a third material such that a selectivity of the top layer material to the second material to the third material is between about 1:1:1 to about 2:1:1 to provide a planar topography.Type: GrantFiled: January 25, 2011Date of Patent: August 20, 2013Assignees: International Business Machines Corporation, JSR CorporationInventors: Josephine B. Chang, Leslie Charns, Jason E. Cummings, Michael A. Guillorn, Lukasz J. Hupka, Dinesh R. Koli, Tomohisa Konno, Mahadevaiyer Krishnan, Michael F. Lofaro, Jakub W. Nalaskowski, Masahiro Noda, Dinesh K. Penigalapati, Tatsuya Yamanaka
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Patent number: 8507383Abstract: Methods for polishing multiple dielectric layers to form replacement metal gate structures include a first chemical mechanical polish step to remove overburden and planarize a top layer to leave a planarized thickness over a gate structure. A second chemical mechanical polish step includes removal of the thickness to expose an underlying covered surface of a dielectric of the gate structure with a slurry configured to polish the top layer and the underlying covered surface substantially equally to accomplish a planar topography. A third chemical mechanical polish step is employed to remove the dielectric of the gate structure and expose a gate conductor.Type: GrantFiled: January 25, 2011Date of Patent: August 13, 2013Assignees: International Business Machines Corporation, JRS CorporationInventors: Takashi Ando, Leslie Charns, Jason E. Cummings, Lukasz J. Hupka, Dinesh R. Koli, Tomohisa Konno, Mahadevaiyer Krishnan, Michael F. Lofaro, Jakub W. Nalaskowski, Masahiro Noda, Dinesh K. Penigalapati, Tatsuya Yamanaka
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Patent number: 8497210Abstract: A polishing method includes polishing, in a first polish, a wafer to remove overburden and planarize a top layer leaving a portion remaining on an underlying layer. A second polishing step includes two phases. In a first phase, the top layer is removed and the underlying layer is exposed, with a top layer to underlying layer selectivity of between about 1:1 to about 2:1 to provide a planar topography. In a second phase, residual portions of the top layer are removed from a top of the underlying layer to ensure complete exposure of an underlying layer surface.Type: GrantFiled: January 24, 2011Date of Patent: July 30, 2013Assignees: International Business Machines Corporation, JRS CorporationInventors: Leslie Charns, Jason E. Cummings, Lukasz J. Hupka, Dinesh R. Koli, Tomohisa Konno, Mahadevaiyer Krishnan, Michael F. Lofaro, Jakub W. Nalaskowski, Masahiro Noda, Dinesh K. Penigalapati, Tatsuya Yamanaka
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CHEMICAL MECHANICAL POLISHING AQUEOUS DISPERSION AND CHEMICAL MECHANICAL POLISHING METHOD USING SAME
Publication number: 20130005219Abstract: A chemical mechanical polishing aqueous dispersion includes (A) silica particles that include at least one functional group selected from the group consisting of a sulfo group or salts thereof, and (B) an acidic compound.Type: ApplicationFiled: January 17, 2011Publication date: January 3, 2013Applicant: JSR CorporationInventors: Akihiro Takemura, Kohei Yoshio, Tatsuya Yamanaka, Tomohisa Konno -
Publication number: 20120083123Abstract: A planarization method includes planarizing a semiconductor wafer in a first chemical mechanical polish step to remove overburden and planarize a top layer leaving a thickness of top layer material over underlying layers. The top layer material is planarized in a second chemical mechanical polish step to further remove the top layer and expose underlying layers of a second material and a third material such that a selectivity of the top layer material to the second material to the third material is between about 1:1:1 to about 2:1:1 to provide a planar topography.Type: ApplicationFiled: January 25, 2011Publication date: April 5, 2012Applicants: JSR CORPORATION, INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Josephine B. Chang, Leslie Charns, Jason E. Cummings, Michael A. Guillorn, Lukasz J. Hupka, Dinesh R. Koli, Tomohisa Konno, Mahadevaiyer Krishnan, Michael F. Lofaro, Jakub W. Nalaskowski, Masahiro Noda, Dinesh K. Penigalapati, Tatsuya Yamanaka
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Publication number: 20120083125Abstract: Planarization methods include depositing a mask material on top of an overburden layer on a semiconductor wafer. The mask material is planarized to remove the mask material from up areas of the overburden layer to expose the overburden layer without removing the mask material from down areas. The exposed overburden layer is wet etched and leaves a thickness remaining over an underlying layer. Remaining portions of the mask layer and the exposed portions of the overburden layer are planarized to expose the underlying layer.Type: ApplicationFiled: January 25, 2011Publication date: April 5, 2012Applicants: JSR CORPORATION, INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Leslie Charns, John M. Cotte, Jason E. Cummings, Lukasz J. Hupka, Dinesh R. Koli, Tomohisa Konno, Mahadevaiyer Krishnan, Michael F. Lafaro, Jakub W. Nalaskowski, Masahiro Noda, Dinesh K. Penigalapati, Tatsuya Yamanaka
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Publication number: 20120083121Abstract: Methods for polishing multiple dielectric layers to form replacement metal gate structures include a first chemical mechanical polish step to remove overburden and planarize a top layer to leave a planarized thickness over a gate structure. A second chemical mechanical polish step includes removal of the thickness to expose an underlying covered surface of a dielectric of the gate structure with a slurry configured to polish the top layer and the underlying covered surface substantially equally to accomplish a planar topography. A third chemical mechanical polish step is employed to remove the dielectric of the gate structure and expose a gate conductor.Type: ApplicationFiled: January 25, 2011Publication date: April 5, 2012Applicants: JSR CORPORATION, INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Takashi Ando, Leslie Charns, Jason E. Cummings, Lukasz J. Hupka, Dinesh R. Koli, Tomohisa Konno, Mahadevaiyer Krishnan, Michael F. Lofaro, Jakub W. Nalaskowski, Masahiro Noda, Dinesh K. Penigalapati, Tatsuya Yamanaka
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Publication number: 20120083122Abstract: A polishing method includes polishing, in a first polish, a wafer to remove overburden and planarize a top layer leaving a portion remaining on an underlying layer. A second polishing step includes two phases. In a first phase, the top layer is removed and the underlying layer is exposed, with a top layer to underlying layer selectivity of between about 1:1 to about 2:1 to provide a planar topography. In a second phase, residual portions of the top layer are removed from a top of the underlying layer to ensure complete exposure of an underlying layer surface.Type: ApplicationFiled: January 24, 2011Publication date: April 5, 2012Applicants: JSR CORPORATION, INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Leslie Charns, Jason E. Cummings, Lukasz J. Hupka, Dinesh R. Koli, Tomohisa Konno, Mahadevaiyer Krishnan, Michael F. Lofaro, Jakub W. Nalaskowski, Masahiro Noda, Dinesh K. Penigalapati, Tatsuya Yamanaka
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Publication number: 20090325383Abstract: A chemical mechanical polishing aqueous dispersion according to the invention includes (A) 0.1 to 4 mass % of colloidal silica having an average particle diameter of 10 to 100 nm, and (B) 0.1 to 3 mass % of at least one ammonium salt selected from ammonium phosphate, diammonium phosphate, and ammonium hydrogen sulfate, the chemical mechanical polishing aqueous dispersion having a mass ratio (A)/(B) of the component (A) to the component (B) of 1 to 3 and a pH of 4 to 5 and being able to simultaneously polish at least two films that form a polishing target surface and are selected from a polysilicon film, a silicon nitride film, and a silicon oxide film.Type: ApplicationFiled: February 20, 2008Publication date: December 31, 2009Applicant: JSR CorporationInventors: Michiaki Andou, Tomohisa Konno
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Publication number: 20090221213Abstract: A chemical mechanical polishing aqueous dispersion of the invention includes (A) a first water-soluble polymer having a weight average molecular weight of 500,000 to 2,000,000 and including a heterocyclic ring in its molecule, (B) a second water-soluble polymer or its salt having a weight average molecular weight of 1000 to 10,000 and including one group selected from a carboxyl group and a sulfonic group, (C) an oxidizing agent, and (D) abrasive grains, and has a pH of 7 to 12.Type: ApplicationFiled: September 27, 2007Publication date: September 3, 2009Applicant: JRS CORPORATIONInventors: Yuuji Namie, Tomohisa Konno, Masayuki Motonari, Hirotaka Shida, Akihiro Takemura
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Publication number: 20090088511Abstract: The electroless plating solution of the present invention is an electroless plating solution used for selectively forming a protective film on a surface of an exposed wiring in the production of a semiconductor device having a wiring structure, wherein the electroless plating solution includes a cobalt ion, an ion of a second metal other than cobalt, a chelating agent, a reducing agent, a surface active agent and a specific tetraalkylammonium hydroxide, and the surface active agent is selected from the group consisting of a compound represented by the following formula (2a) or (2b), a sulfonic acid type anionic surface active agent, a polyoxyethylene alkyl ether phosphoric ester and a polyoxyalkylene monoalkyl ether, wherein R5 to R8 are each a hydrogen atom or a specific alkyl group, R9 and R10 are each an alkylene group of 2 to 5 carbon atoms, j and k are each independently an integer of not less than 1, and the sum of j and k is 2 to 50.Type: ApplicationFiled: March 13, 2007Publication date: April 2, 2009Applicant: JSR CORPORATIONInventors: Tomohisa Konno, Taichi Matsumoto
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Patent number: 7498294Abstract: The cleaning composition which comprises organic polymer particles (A) having a crosslinked structure and a surfactant (B) and is used after chemical mechanical polishing. The cleaning method of a semiconductor substrate is a method for cleaning semiconductor substrate given after chemical mechanical polishing, by the use of the cleaning composition. The process for manufacturing a semiconductor device including a step of chemically and mechanically polishing a semiconductor substrate and a step of cleaning the semiconductor substrate obtained after the chemical mechanical polishing, by the cleaning method.Type: GrantFiled: February 9, 2005Date of Patent: March 3, 2009Assignee: JSR CorporationInventors: Tomohisa Konno, Kiyonobu Kubota, Masayuki Hattori, Nobuo Kawahashi
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Publication number: 20080274620Abstract: A chemical mechanical polishing method of the present invention comprises conducting polishing by the use of a chemical mechanical polishing aqueous dispersion (A) containing abrasive grains and then conducting polishing by the use of a chemical mechanical polishing aqueous composition (B) containing at least one organic compound having a heterocyclic ring in addition to the chemical mechanical polishing aqueous dispersion (A). Also A chemical mechanical polishing agent kit of the present invention comprises the chemical mechanical polishing aqueous dispersion (A) and the chemical mechanical polishing aqueous composition (B). The polishing method and the polishing agent kit can prevent an increase of dishing and corrosion of wiring portion to enhance the yield.Type: ApplicationFiled: June 30, 2008Publication date: November 6, 2008Applicant: JSR CORPORATIONInventors: Hirotaka SHIDA, Tomohisa Konno, Masayuki Hattori, Nobuo Kawahashi
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Patent number: 7378349Abstract: Disclosed is a chemical mechanical polishing aqueous dispersion comprising (A1) first fumed silica having a specific surface area of not less than 10 m2/g and less than 160 m2/g and an average secondary particle diameter of not less than 170 nm and not more than 250 nm and (A2) second fumed silica having a specific surface area of not less than 160 m2/g and an average secondary particle diameter of not less than 50 nm and less than 170 nm. Also disclosed is a chemical mechanical polishing method using the chemical mechanical polishing aqueous dispersion. According to the chemical mechanical polishing aqueous dispersion and the chemical mechanical polishing method, a chemical mechanical polishing process wherein a barrier metal layer and a cap layer can be efficiently removed by polishing and damage to an insulating film material of a low dielectric constant present in the underlying layer is reduced can be carried out.Type: GrantFiled: April 11, 2005Date of Patent: May 27, 2008Assignee: JSR CorporationInventors: Tomohisa Konno, Hirotaka Shida, Kiyonobu Kubota, Masayuki Hattori, Nobuo Kawahashi
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Publication number: 20080045016Abstract: A cleaning composition can decontaminate a surface of a chemically mechanically polished semiconductor substrate having a metal wiring and a low dielectric constant film and can highly remove impurities such as residual abrasive grains, residual polishing waste, and metal ions on the metal wiring and low dielectric constant film without corroding the metal wiring, degrading electric characteristics of the low dielectric constant film, and causing mechanical damage to the low dielectric constant film. A cleaning method of a semiconductor substrate uses the cleaning composition, and a manufacturing method of a semiconductor substrate includes a step of performing the cleaning method. The cleaning composition is used for a chemically mechanically polished surface, and includes organic polymer particles (A) having a crosslinked structure and an average dispersed particle diameter of 10 nm or more and less than 100 nm, and a complexing agent (B).Type: ApplicationFiled: August 3, 2007Publication date: February 21, 2008Applicants: JSR CORPORATION, KABUSHIKI KAISHA TOSHIBAInventors: Michiaki Andou, Tomohisa Konno, Hirotaka Shida, Kazuhito Uchikura, Nobuyuki Kurashima, Gaku Minamihaba, Yoshikuni Tateyama, Hiroyuki Yano
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Patent number: 7183211Abstract: The object of the present invention is to provide a process for chemical mechanical polishing of semiconductor substrate that is particularly useful for chemical mechanical polishing a wafer having a wiring pattern and an insulating layer having a low dielectric constant is formed between wiring patterns, interlayers in the case of a multi-layer wiring and the like in the process of producing a semiconductor device, and an aqueous dispersion for chemical mechanical polishing which is used in this process.Type: GrantFiled: January 23, 2003Date of Patent: February 27, 2007Assignee: JSR CorporationInventors: Tomohisa Konno, Masayuki Motonari, Masayuki Hattori, Nobuo Kawahashi