Abstract: A data collection system includes: a monitoring device that sequentially instructs two or more in-vehicle devices installed in a railroad car to start operating and to stop operating; and an auxiliary power supply that sequentially measures an output voltage and an output current while the in-vehicle devices operate in turns in accordance with an instruction from the monitoring device, and records measurement results.

Abstract: A handler has a processing unit, first and second driving units, a holding unit and a crank unit. The processing unit processes a device provided in a placement area. The first driving unit moves the processing unit along a movement path. The holding unit holds the device and is attached to the crank unit. The second driving unit moves the holding unit. The crank unit comprises a first portion to which the holding unit is attached and a second portion connected to the first portion. The handler is allowed to be in a first posture for causing the holding unit to be located inside the movement path and to be in a second posture for causing the processing unit to be located in vicinity of the device.

Abstract: A handler has a processing unit, first and second driving units, a holding unit and a crank unit. The processing unit processes a device provided in a placement area. The first driving unit moves the processing unit along a movement path. The holding unit holds the device and is attached to the crank unit. The second driving unit moves the holding unit. The crank unit comprises a first portion to which the holding unit is attached and a second portion connected to the first portion. The handler is allowed to be in a first posture for causing the holding unit to be located inside the movement path and to be in a second posture for causing the processing unit to be located in vicinity of the device.

Abstract: There is provided a tungsten film forming method for forming a tungsten film on a target substrate disposed inside a chamber kept under a depressurized atmosphere and having a base film formed on a surface thereof, using a tungsten chloride gas as a tungsten raw material gas and a reducing gas for reducing the tungsten chloride gas, which includes: performing an SiH4 gas treatment with respect to the target substrate having the base film formed thereon by supplying an SiH4 gas into the chamber; and subsequently, forming the tungsten film by sequentially supplying the tungsten chloride gas and the reducing gas into the chamber while purging an interior of the chamber in the course of sequentially supplying the tungsten chloride gas and the reducing gas.

Abstract: There is provided a tungsten film forming method for forming a tungsten film on a target substrate disposed inside a chamber kept under a depressurized atmosphere and having a base film formed on a surface thereof, using a tungsten chloride gas as a tungsten raw material gas and a reducing gas for reducing the tungsten chloride gas, which includes: performing an SiH4 gas treatment with respect to the target substrate having the base film formed thereon by supplying an SiH4 gas into the chamber; and subsequently, forming the tungsten film by sequentially supplying the tungsten chloride gas and the reducing gas into the chamber while purging an interior of the chamber in the course of sequentially supplying the tungsten chloride gas and the reducing gas.

Abstract: A tungsten film forming method for forming a tungsten film on a surface of a target substrate by an ALD (atomic layer deposition) method comprises adding a reduction gas to allow an ALD reaction to mainly occur when a tungsten chloride gas is supplied. In the ALD method, the tungsten chloride gas as a tungsten source gas and the reduction gas for reducing the tungsten chloride gas are alternately supplied into a chamber which accommodates the target substrate and is maintained under a depressurized atmosphere, with a purge process for purging an inside of the chamber performed between the supply of the tungsten chloride gas and the supply of the reduction gas.

Abstract: A tungsten film forming method for forming a tungsten film on a surface of a target substrate by an ALD (atomic layer deposition) method comprises adding a reduction gas to allow an ALD reaction to mainly occur when a tungsten chloride gas is supplied. In the ALD method, the tungsten chloride gas as a tungsten source gas and the reduction gas for reducing the tungsten chloride gas are alternately supplied into a chamber which accommodates the target substrate and is maintained under a depressurized atmosphere, with a purge process for purging an inside of the chamber performed between the supply of the tungsten chloride gas and the supply of the reduction gas.