Patents by Inventor Tomohisa Sekiguchi

Tomohisa Sekiguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240006344
    Abstract: A semiconductor device includes a chip mounting portion and a semiconductor chip provided on the chip mounting portion via a conductive adhesive material. Here, a planar shape of the semiconductor chip is a quadrangular shape. Also, in plan view, a plurality of thin portions is formed at a plurality of corner portions of the semiconductor chip, respectively. Also, the plurality of thin portions respectively formed at the plurality of corner portions of the semiconductor chip is spaced apart from each other. Further, thickness of each of the plurality of thin portions is smaller than a thickness of the semiconductor chip other than the plurality of the thin portions.
    Type: Application
    Filed: June 7, 2023
    Publication date: January 4, 2024
    Inventors: Yasutaka NAKASHIBA, Toshiyuki HATA, Hiroshi YANAGIGAWA, Tomohisa SEKIGUCHI
  • Patent number: 10297547
    Abstract: A wiring is formed over a semiconductor substrate via an interlayer insulation film, and another interlayer insulation film is formed over the interlayer insulation film so as to cover the wiring, and a pad is formed over the another interlayer insulation film. Over the another interlayer insulation film, a layered film having an opening portion in which a pad is exposed is formed, and a redistribution wiring electrically connected to the pad is formed over the layered film and over the pad exposed in the opening portion. An end portion of the wiring is located below a connection region between the pad and the redistribution wiring. The wiring has a plurality of opening portions formed therein, and at least a part of the plurality of opening portions overlaps with the connection region in plan view.
    Type: Grant
    Filed: January 3, 2018
    Date of Patent: May 21, 2019
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventors: Yuji Kayashima, Tomohisa Sekiguchi
  • Publication number: 20180247893
    Abstract: A wiring is formed over a semiconductor substrate via an interlayer insulation film, and another interlayer insulation film is formed over the interlayer insulation film so as to cover the wiring, and a pad is formed over the another interlayer insulation film. Over the another interlayer insulation film, a layered film having an opening portion in which a pad is exposed is formed, and a redistribution wiring electrically connected to the pad is formed over the layered film and over the pad exposed in the opening portion. An end portion of the wiring is located below a connection region between the pad and the redistribution wiring. The wiring has a plurality of opening portions formed therein, and at least a part of the plurality of opening portions overlaps with the connection region in plan view.
    Type: Application
    Filed: January 3, 2018
    Publication date: August 30, 2018
    Inventors: Yuji Kayashima, Tomohisa Sekiguchi
  • Patent number: 8225267
    Abstract: A structure analysis apparatus (1) for analyzing structure of a complex material layer containing a plurality of members (2a, 2b) for modeling layout data on a complex material layer, includes: an area setting portion (21) for setting an area to be modeled in the complex material layer; an area dividing portion (22) for dividing the area into a plurality of elements; an area computing portion (23) for calculating, based on an occupancy of each of the plurality of members (2a, 2b) in the area, the number of elements corresponding respectively to the plurality of members (2a, 2b); and an element placing portion (24) for generating a model of the complex material layer by placing the plurality of members (2a, 2b) respectively in the plurality of elements based on the number of the elements corresponding respectively to the plurality of members (2a, 2b).
    Type: Grant
    Filed: March 8, 2010
    Date of Patent: July 17, 2012
    Assignee: Renesas Electronics Corporation
    Inventor: Tomohisa Sekiguchi
  • Publication number: 20100242002
    Abstract: A structure analysis apparatus (1) for analyzing structure of a complex material layer containing a plurality of members (2a, 2b) for modeling layout data on a complex material layer, includes: an area setting portion (21) for setting an area to be modeled in the complex material layer; an area dividing portion (22) for dividing the area into a plurality of elements; an area computing portion (23) for calculating, based on an occupancy of each of the plurality of members (2a, 2b) in the area, the number of elements corresponding respectively to the plurality of members (2a, 2b); and an element placing portion (24) for generating a model of the complex material layer by placing the plurality of members (2a, 2b) respectively in the plurality of elements based on the number of the elements corresponding respectively to the plurality of members (2a, 2b).
    Type: Application
    Filed: March 8, 2010
    Publication date: September 23, 2010
    Applicant: NEC ELECTRONICS CORPORATION
    Inventor: Tomohisa Sekiguchi
  • Publication number: 20080128881
    Abstract: In one embodiment, provided is a semiconductor device including a first semiconductor package, a second semiconductor package and a conductive plate. The first semiconductor package includes a first interconnect substrate and a first semiconductor chip. The second semiconductor package includes a second interconnect substrate and a second semiconductor chip, and is stacked on the first semiconductor package. The conductive plate is provided between the first semiconductor package and the second semiconductor package. The conductive plate is electrically coupled to the GND plane of the mounting board, so that a fixed potential is provided. The distance from the lower surface of the first interconnect substrate to the lower surface of the second interconnect substrate is larger than a total of a thickness of the first interconnect substrate, a thickness of the first semiconductor chip and a thickness of the conductive plate.
    Type: Application
    Filed: November 30, 2007
    Publication date: June 5, 2008
    Applicant: NEC ELECTRONICS CORPORATION
    Inventor: Tomohisa SEKIGUCHI