Abstract: In this power semiconductor module, a first lead frame and a second lead frame through which currents flow in opposite directions are arranged so as to overlap each other, whereby the internal inductance can be reduced. In a direction perpendicular to one main surface of a first metal wiring layer, each of the first lead frame and the second lead frame is provided so as not to overlap parts of end surfaces of the first metal wiring layer and a second metal wiring layer. Thus, in a manufacturing process for the power semiconductor module before sealing with sealing resin, it is possible to easily perform positioning between the lead frames and between the metal wiring layer and the lead frame, using the end surfaces, whereby the manufacturing process can be simplified.

Abstract: A power semiconductor device includes a power module unit, an adhesive sheet, a support member, and a flow prevention frame. The adhesive sheet is bonded to the power module unit. The support member is connected to the power module unit with the adhesive sheet therebetween. The flow prevention frame is sandwiched between the power module unit and the support member, and is placed around the adhesive sheet. The adhesive sheet has an outer peripheral surface adjoining an inner peripheral surface of the flow prevention frame. A value obtained by dividing a maximum value of the internal pressure on the outer peripheral surface by a minimum value of the internal pressure is less than or equal to 10.

Abstract: The semiconductor device includes: a heat spreader; a plurality of semiconductor elements; and one or a plurality of temperature detection elements. If a line segment connecting centers of two respective adjacent ones of the semiconductor elements is defined as X, a straight line that passes through one of the centers of the two adjacent semiconductor elements and that is perpendicular to X and parallel to the one-side surface of the heat spreader is defined as Y1, and a straight line that passes through another one of the centers of the two adjacent semiconductor elements and that is perpendicular to X and parallel to the one-side surface of the heat spreader is defined as Y2, at least a part of the temperature detection element is located in an arrangement region interposed between Y1 and Y2, as seen in a direction perpendicular to the one-side surface of the heat spreader.

Abstract: The power module includes: a heat spreader having a plate shape and having heat conducting property; a semiconductor element at least thermally connected to a one-side surface of the heat spreader; a highly-heat-dissipating insulation adhesive sheet having a plate shape and having a one-side surface thermally connected to an other-side surface of the heat spreader; a metal plate having a one-side surface thermally connected to an other-side surface of the highly-heat-dissipating insulation adhesive sheet; and a sealing resin member sealing the semiconductor element, the heat spreader, the highly-heat-dissipating insulation adhesive sheet, and the metal plate in a state where an other-side surface of the metal plate is exposed, wherein the highly-heat-dissipating insulation adhesive sheet is a complex obtained by impregnating, with a resin, a porous ceramic sintered body in which ceramic particles have a gap and have been integrally sintered.

Abstract: Provided is a semiconductor device that prevents resin from leaking out from a resin insulating member at a periphery of the resin insulating member and thereby achieves an increase in reliability. The semiconductor device includes a module unit, a resin insulating member bonded to the module unit, a cooling unit coupled to the module unit with the resin insulating member interposed therebetween, and a flow blocking member disposed between the module unit and the cooling unit to surround the resin insulating member, the flow blocking member being more easily compressively deformable than the resin insulating member.

Abstract: A reliable semiconductor module and a reliable power conversion device using the semiconductor module are obtained. A semiconductor module includes a heat dissipation member, a semiconductor device, and a thermally conductive insulating resin sheet. The thermally conductive insulating resin sheet connects the heat dissipation member and the semiconductor device. The semiconductor device includes a semiconductor element and a metal wiring member. The metal wiring member is electrically connected to the semiconductor element. The metal wiring member includes a terminal portion protruding outside the semiconductor device. In a surface portion of the semiconductor device, a concave portion is formed outward of a partial region to which the thermally conductive insulating resin sheet is connected. The concave portion is located in a region closer to the heat dissipation member than the terminal portion.