Patents by Inventor Tomohito Hirose

Tomohito Hirose has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • TUBULAR BODY AND METHOD FOR PRODUCING TUBULAR BODY
    Publication number: 20240165891
    Abstract: A tubular body (1) made of a fiber-reinforced plastic and used as a structural material of a vehicle includes corners (4) extending along an axis of the tubular body (1) on an outer circumferential surface thereof. The tubular body (1) is a tubular laminate that is formed by laminating a fabric layer (12) formed by laminating fabric materials and unidirectional material layers (11, 13). Each fabric material includes a fabric in which reinforcing fibers are woven and a plastic with which the fabric is impregnated. Each unidirectional material layer (11, 13) includes reinforcing fibers oriented in one direction and a plastic with which the reinforcing fibers are impregnated. The reinforcing fibers of each unidirectional material layer (11, 13) are oriented along the axis of the tubular laminate.
    Type: Application
    Filed: February 14, 2022
    Publication date: May 23, 2024
    Applicants: MIZUNO TECHNICS CORPORATION, MAZDA MOTOR CORPORATION
    Inventors: Takeshi SAITO, Makoto HIROSE, Takumi KASHIMA, Hiroki YANO, Chikara TANAKA, Tomohito OKUYAMA, Taei SHIBAHARA, Masaki MOTOKI
  • Light pattern exposure method, halftone phase shift mask, and halftone phase shift mask blank
    Patent number: 8753786
    Abstract: A light pattern exposure method is by irradiating ArF excimer laser light to a resist film through a halftone phase shift mask. The mask includes a transparent substrate and a pattern of halftone phase shift film of a material comprising a transition metal, silicon, nitrogen and oxygen and having an atomic ratio (Met/Si) of 0.18-0.25, a nitrogen content of 25-50 atom %, and an oxygen content of 5-20 atom %. The mask may be irradiated with ArF excimer laser light in a cumulative dose of at least 10 kJ/cm2.
    Type: Grant
    Filed: November 20, 2012
    Date of Patent: June 17, 2014
    Assignees: Shin-Etsu Chemical Co., Ltd., Toppan Printing Co., Ltd.
    Inventors: Hiroki Yoshikawa, Yukio Inazuki, Ryuji Koitabashi, Hideo Kaneko, Yosuke Kojima, Takashi Haraguchi, Tomohito Hirose
  • Light pattern exposure method, photomask, and photomask blank
    Patent number: 8753787
    Abstract: A light pattern exposure method is by irradiating ArF excimer laser light to a resist film through a photomask. The photomask includes a transparent substrate and a pattern of optical film of a material comprising a transition metal, silicon, nitrogen and oxygen, with contents thereof falling in a specific range. The photomask may be irradiated with ArF excimer laser light in a cumulative dose of at least 10 kJ/cm2.
    Type: Grant
    Filed: November 20, 2012
    Date of Patent: June 17, 2014
    Assignees: Shin-Etsu Chemical Co., Ltd., Toppan Printing Co., Ltd.
    Inventors: Hiroki Yoshikawa, Yukio Inazuki, Ryuji Koitabashi, Hideo Kaneko, Yosuke Kojima, Takashi Haraguchi, Tomohito Hirose
  • Photomask blank and making method, photomask, light pattern exposure method, and design method of transition metal/silicon base material film
    Patent number: 8475978
    Abstract: A photomask blank has a film of a transition metal/silicon base material comprising a transition metal, silicon, oxygen and nitrogen, having an oxygen content of at least 3 atom %, and satisfying the formula: 4×CSi/100?6×CM/100>1 wherein CSi is a silicon content in atom % and CM is a transition metal content in atom %.
    Type: Grant
    Filed: September 9, 2011
    Date of Patent: July 2, 2013
    Assignees: Shin-Etsu Chemical Co., Ltd., Toppan Printing Co., Ltd.
    Inventors: Hiroki Yoshikawa, Yukio Inazuki, Ryuji Koitabashi, Hideo Kaneko, Takashi Haraguchi, Yosuke Kojima, Tomohito Hirose
  • PHOTOMASK BLANK AND MAKING METHOD, PHOTOMASK, LIGHT PATTERN EXPOSURE METHOD, AND DESIGN METHOD OF TRANSITION METAL/SILICON BASE MATERIAL FILM
    Publication number: 20120064438
    Abstract: A photomask blank has a film of a transition metal/silicon base material comprising a transition metal, silicon, oxygen and nitrogen, having an oxygen content of at least 3 atom %, and satisfying the formula: 4×CSi/100?6×CM/100>1 wherein CSi is a silicon content in atom % and CM is a transition metal content in atom %.
    Type: Application
    Filed: September 9, 2011
    Publication date: March 15, 2012
    Inventors: Hiroki YOSHIKAWA, Yukio Inazuki, Ryuji Koitabashi, Hideo Kaneko, Takashi Haraguchi, Yosuke Kojima, Tomohito Hirose