Abstract: A sintered member is provided between a semiconductor chip and a terminal. The sintered member is made of a sinter sheet by heating and pressing the same. The semiconductor chip is connected to the terminal via the sintered member. Convex portions are formed at a front-side surface of the semiconductor chip. Concave portions, each of which has such a shape corresponding to that of each convex portion of the semiconductor chip, are formed at a surface of the sintered member facing to the semiconductor chip.

Abstract: Joining a second supporting member to one surface of a semiconductor chip through an upper layer joining portion includes: forming, on the one surface, a pre-joining layer by pressure-sintering a first constituent member containing a sintering material on the one surface such that spaces between the plurality of protrusions are filled with the pre-joining layer and the pre-joining layer has a flat surface on a side of the pre-joining layer away from the semiconductor chip; arranging, on the flat surface, the second supporting member through a second constituent member containing a sintering material; and heating and pressurizing the second constituent member. Thereby, an upper layer joining portion is formed by the second constituent member and the pre-joining layer.

Abstract: In a semiconductor device, a first semiconductor chip and a second semiconductor chip are disposed between a first support member and a second support member. A first underlayer bonding material is disposed between the first semiconductor chip and the first support member. A second underlayer bonding material is disposed between the second semiconductor chip and the first support member. A first upper layer bonding material is disposed between the first semiconductor chip and the second support member. A second upper layer bonding material is disposed between the second semiconductor chip and the second support member.

Abstract: A semiconductor device includes a semiconductor chip having an electrode portion and a joining member electrically connected to the electrode portion to allow an electric current to flow in the semiconductor chip through the joining member. The joining member contains a protective material that has a positive temperature coefficient of resistivity, and the positive temperature coefficient of resistivity has a larger value in a temperature range higher than a threshold temperature than in a temperature range lower than the threshold temperature, the threshold temperature being a predetermined temperature lower than a breakdown temperature of the semiconductor chip. The electrode portion of the semiconductor chip may contain the protective material.

Abstract: A sintered member is provided between a semiconductor chip and a terminal. The sintered member is made of a sinter sheet by heating and pressing the same. The semiconductor chip is connected to the terminal via the sintered member. Convex portions are formed at a front-side surface of the semiconductor chip. Concave portions, each of which has such a shape corresponding to that of each convex portion of the semiconductor chip, are formed at a surface of the sintered member facing to the semiconductor chip.

Abstract: A semiconductor device includes: a mounting member having an electrode; a conductive member facing the electrode; and a bonding member electrically and mechanically connecting the electrode and the conductive member. The bonding member is made of a sintered body in which an additive particle including a metal atom having aggregation energy higher than a silver atom is added to an silver particle.

Abstract: In a semiconductor device, a first semiconductor chip and a second semiconductor chip are disposed between a first support member and a second support member. A first underlayer bonding material is disposed between the first semiconductor chip and the first support member. A second underlayer bonding material is disposed between the second semiconductor chip and the first support member. A first upper layer bonding material is disposed between the first semiconductor chip and the second support member. A second upper layer bonding material is disposed between the second semiconductor chip and the second support member.

Abstract: A semiconductor device includes: a semiconductor element; a support as a metallic member that includes a metallized layer having a first component as an iron group element and a second component as a periodic table group five or group six transition metal element other than chromium provided at an outermost surface of the support, and is arranged such that the outermost surface faces the semiconductor element; a joint material that is arranged between the outermost surface of the support and the semiconductor element, and is joined with the outermost surface to fix the semiconductor element to the support; and a molding resin that is arranged to cover a joint body having the support, the joint material and the semiconductor element.

Abstract: A semiconductor device includes: a mounting member having an electrode; a conductive member facing the electrode; and a bonding member electrically and mechanically connecting the electrode and the conductive member. The bonding member is made of a sintered body in which an additive particle including a metal atom having aggregation energy higher than a silver atom is added to an silver particle.

Abstract: A semiconductor device includes: a semiconductor element; a support as a metallic member that includes a metallized layer having a first component as an iron group element and a second component as a periodic table group five or group six transition metal element other than chromium provided at an outermost surface of the support, and is arranged such that the outermost surface faces the semiconductor element; a joint material that is arranged between the outermost surface of the support and the semiconductor element, and is joined with the outermost surface to fix the semiconductor element to the support; and a molding resin that is arranged to cover a joint body having the support, the joint material and the semiconductor element.

Abstract: A semiconductor device includes a semiconductor chip having an electrode portion and a joining member electrically connected to the electrode portion to allow an electric current to flow in the semiconductor chip through the joining member. The joining member contains a protective material that has a positive temperature coefficient of resistivity, and the positive temperature coefficient of resistivity has a larger value in a temperature range higher than a threshold temperature than in a temperature range lower than the threshold temperature, the threshold temperature being a predetermined temperature lower than a breakdown temperature of the semiconductor chip. The electrode portion of the semiconductor chip may contain the protective material.

Abstract: A semiconductor device includes a semiconductor chip, a resin mold portion sealing a component in which the semiconductor chip is included, and a bonding layer disposed between the resin mold portion and the component. The bonding layer is made of an organic resin that is disposed at an obverse side of the component, and includes a first layer bonded to the component and a second layer bonded to the resin mold portion. A loss coefficient tan ? of the first layer is smaller than a loss coefficient tan ? of the second layer within a temperature range of 200° C. to 250° C.

Abstract: A semiconductor device includes a semiconductor chip, a resin mold portion sealing a component in which the semiconductor chip is included, and a bonding layer disposed between the resin mold portion and the component. The bonding layer is made of an organic resin that is disposed at an obverse side of the component, and includes a first layer bonded to the component and a second layer bonded to the resin mold portion. A loss coefficient tan? of the first layer is smaller than a loss coefficient tans of the second layer within a temperature range of 200° C. to 250° C.

Abstract: The present invention relates to an epoxy resin composition for semiconductor encapsulation, including the following components (A) to (E), in which the component (D) is contained in an amount of from 0.1 to 1.5% by weight of the whole of the epoxy resin composition: (A) an epoxy resin; (B) a phenol resin; (C) an inorganic filler; (D) a compound represented by the following formula (1) in which R1 represents a hydroxyl group or an alkoxy group, R2 represents a hydrogen atom or a monovalent hydrocarbon group, and n is an integer of from 1 to 7; and (E) a release agent including at least one of the following (?) and (?): (?) a linear saturated carboxylic acid having a number average molecular weight of from 550 to 800, and (?) an oxidized polyethylene wax: R1CH2—CH2—OnR2??(1).

Abstract: The present invention relates to an epoxy resin composition for semiconductor encapsulation, including the following components (A) to (D): (A) an epoxy resin; (B) a phenol resin; (C) an inorganic filler, and (D) a silicone compound containing an alkoxy group directly bonded to silicon atom in an amount of 10 to 45 wt % based on the entire silicone compound and having a specific gravity of 1.10 to 1.30.

Abstract: The present invention relates to an epoxy resin composition for semiconductor encapsulation, including the following components (A) to (F): (A) an epoxy resin; (B) a phenol resin; (C) a curing accelerator; (D) an inorganic filler; (E) a hydrotalcite compound; and (F) a carboxyl group-containing wax having an acid value of 10 to 100 mg KOH/g.

Abstract: The present invention relates to an epoxy resin composition for semiconductor encapsulation, including the following components (A) to (E), in which the component (D) is contained in an amount of from 0.1 to 1.

Abstract: The present invention relates to an epoxy resin composition for semiconductor encapsulation, including the following components (A) to (D): (A) an epoxy resin; (B) a phenol resin; (C) an inorganic filler, and (D) a silicone compound containing an alkoxy group directly bonded to silicon atom in an amount of 10 to 45 wt % based on the entire silicone compound and having a specific gravity of 1.10 to 1.30.

Abstract: The present invention relates to an epoxy resin composition for semiconductor encapsulation, including the following components (A) to (E):(A) an epoxy resin; (B) a phenol resin other than component (C); (C) a silane-modified phenol resin represented by Formula (1) as defined in the specification; (D) a curing accelerator; and (E) an inorganic filler; wherein the component (C) is contained in an amount of 0.8 to 30.0% by weight based on a total weight of organic components in the epoxy resin composition.

Abstract: A method of manufacturing a semiconductor device which is excellent in high-temperature high-humidity reliability without decreasing moldability and curability is provided. The method includes sealing a semiconductor element in resin using a semiconductor-sealing epoxy resin composition; and then performing a heating treatment. The semiconductor-sealing epoxy resin composition contains (A) an epoxy resin of formula (1): wherein X is a single bond, —CH2—, —S— or —O—; and R1 to R4, which may be the same as or different, are each —H or —CH3, (B) a phenolic resin, (C) an amine-based curing accelerator, and (D) an inorganic filler. The heating treatment is performed under heat treatment conditions defined by a region in which a relationship t?3.3×10?5 exp(2871/T) is satisfied where t is heat treatment time in minutes and T is heat treatment temperature in ° C. and where 185?T?300.