Abstract: The light emitting device includes a substrate, and an n-type conductive type semiconductor layer, a light emitting layer and a p-type conductive type semiconductor layer laminated in series on a surface of the substrate. The light emitting layer, the p-type conductive type semiconductor layer, and a portion of the n-type conductive type semiconductor layer excluding the vicinity of the peripheral portion compose a semiconductor laminate structure portion. A p-side transparent electrode layer is formed on a surface of the p-type conductive type semiconductor layer. The p-side transparent electrode covers a substantially whole area of a predetermined current injection region on a surface of the p-type conductive type semiconductor layer. A p-side electrode is formed on a surface of the p-side transparent electrode layer.

Abstract: A light emitting element includes: a substrate; a first conductive type semiconductor layer stacked on the substrate; a light emitting layer stacked on the first conductive type semiconductor layer; a second conductive type semiconductor layer stacked on the light emitting layer; an ITO layer stacked on the second conductive type semiconductor layer; and a reflective layer stacked on the ITO layer. The substrate is transparent to an emission wavelength of the light emitting layer, and the reflective layer includes a Ti-containing first layer stacked on the ITO layer to make contact with the ITO layer and an Al-containing second layer stacked on the first layer in an opposite side to the ITO layer.

Abstract: The light emitting device 1 includes a substrate 2, and an n-type conductive type semiconductor layer 3, a light emitting layer 4 and a p-type conductive type semiconductor layer 5 laminated in series on a surface 2A of the substrate 2. The light emitting layer 4, the p-type conductive type semiconductor layer 5, and a portion of the n-type conductive type semiconductor layer 3 excluding the vicinity of the peripheral portion compose a semiconductor laminate structure portion 6. A p-side transparent electrode layer 14 is formed on a surface of the p-type conductive type semiconductor layer 5. The p-side transparent electrode 14 covers a substantially whole area of a predetermined current injection region 13 on a surface of the p-type conductive type semiconductor layer 5. A p-side electrode 15 is formed on a surface of the p-side transparent electrode layer 14.

Abstract: The light emitting device 1 includes a substrate 2, and an n-type conductive type semiconductor layer 3, a light emitting layer 4 and a p-type conductive type semiconductor layer 5 laminated in series on a surface 2A of the substrate 2. The light emitting layer 4, the p-type conductive type semiconductor layer 5, and a portion of the n-type conductive type semiconductor layer 3 excluding the vicinity of the peripheral portion compose a semiconductor laminate structure portion 6. A p-side transparent electrode layer 14 is formed on a surface of the p-type conductive type semiconductor layer 5. The p-side transparent electrode 14 covers a substantially whole area of a predetermined current injection region 13 on a surface of the p-type conductive type semiconductor layer 5. A p-side electrode 15 is formed on a surface of the p-side transparent electrode layer 14.

Abstract: The semiconductor device includes a substrate, a semiconductor layer which is formed on the substrate and includes a light emitting layer, and a diffraction/scattering film for diffracting or scattering light generated at the light emitting layer. The diffraction/scattering film is formed between the light emitting layer and the substrate, has a side surface slanted with respect to a film thickness direction thereof, and has a composition gradient in the film thickness direction.

Abstract: A light emitting element includes: a substrate; a first conductive type semiconductor layer stacked on the substrate; a light emitting layer stacked on the first conductive type semiconductor layer; a second conductive type semiconductor layer stacked on the light emitting layer; an ITO layer stacked on the second conductive type semiconductor layer; and a reflective layer stacked on the ITO layer. The substrate is transparent to an emission wavelength of the light emitting layer, and the reflective layer includes a Ti-containing first layer stacked on the ITO layer to make contact with the ITO layer and an Al-containing second layer stacked on the first layer in an opposite side to the ITO layer.

Abstract: The semiconductor device includes a substrate, a semiconductor layer which is formed on the substrate and includes a light emitting layer, and a diffraction/scattering film for diffracting or scattering light generated at the light emitting layer. The diffraction/scattering film is formed between the light emitting layer and the substrate, has a side surface slanted with respect to a film thickness direction thereof, and has a composition gradient in the film thickness direction.