Abstract: A memory device, containing a first interconnection extending in a first direction; a first layer including tungsten nitride provided on the first interconnection; a stacked body layer provided on the first layer, a second layer including tungsten provided on the stacked body layer, a memory cell including a germanium tellurium antimony provided on the second layer, a second interconnection provided above the memory cell and extending in a second direction intersecting the first direction; and a third layer including tungsten disposed between the memory cell and the second interconnection, wherein the stacked body layer contains a first material layer of a first material which is different from a material of the first layer, and a second material layer including a second material which is different from the first material and the material of the first layer, wherein the second layer covers a lower surface of the memory cell, and wherein the third layer covers an upper surface of the memory cell.

Abstract: According to one embodiment, a resistive random access memory device includes a first electrode and a second electrode. The resistive random access memory device also includes a resistance change layer connected between the first electrode and the second electrode. The resistive random access memory device also includes a conductive layer connected in series to the resistance change layer between the first electrode and the second electrode. The resistive random access memory device in which the conductive layer includes a plurality of first material layers including a first material and a plurality of second material layers including a second material which is different from the first material.

Abstract: According to one embodiment, a resistive random access memory device includes a first wiring extending in a first direction, a first ion source layer provided in a first portion on the first wiring and a first variable resistance layer provided on the first ion source layer. The resistive random access memory device also includes a second wiring, which is provided on the first variable resistance layer, faces the first portion, and extends in a second direction different from the first direction. The resistive random access memory device also includes a second variable resistance layer provided in a second portion on the second wiring, a second ion source layer provided on the second variable resistance layer and a third wiring, which is provided on the second ion source layer, faces the second portion, and extends in the first direction.

Abstract: According to one embodiment, a resistive random access memory device includes a first electrode and a second electrode. The resistive random access memory device also includes a resistance change layer connected between the first electrode and the second electrode. The resistive random access memory device also includes a conductive layer connected in series to the resistance change layer between the first electrode and the second electrode. The resistive random access memory device in which the conductive layer includes a plurality of first material layers including a first material and a plurality of second material layers including a second material which is different from the first material.

Abstract: According to one embodiment, a storage device includes first electrodes, second electrodes, a resistance change layer provided between the first electrodes and the second electrodes, and ion metal particles that are formed in an island form between the first electrodes and the resistance change layer and that contain a metal movable inside the resistance change layer. The first electrodes and the second electrodes are formed of a material which is more unlikely to be ionized as compared to the metal, and the first electrodes are in contact with the resistance change layer in an area around the ion metal particles.

Abstract: According to one embodiment, a storage device includes first electrodes, second electrodes, a resistance change layer provided between the first electrodes and the second electrodes, and ion metal particles that are formed in an island form between the first electrodes and the resistance change layer and that contain a metal movable inside the resistance change layer. The first electrodes and the second electrodes are formed of a material which is more unlikely to be ionized as compared to the metal, and the first electrodes are in contact with the resistance change layer in an area around the ion metal particles.

Abstract: According to one embodiment, a storage device includes first electrodes, second electrodes, a resistance change layer provided between the first electrodes and the second electrodes, and ion metal particles that are formed in an island form between the first electrodes and the resistance change layer and that contain a metal movable inside the resistance change layer. The first electrodes and the second electrodes are formed of a material which is more unlikely to be ionized as compared to the metal, and the first electrodes are in contact with the resistance change layer in an area around the ion metal particles.

Abstract: According to one embodiment, a storage device includes first electrodes, second electrodes, a resistance change layer provided between the first electrodes and the second electrodes, and ion metal particles that are formed in an island form between the first electrodes and the resistance change layer and that contain a metal movable inside the resistance change layer. The first electrodes and the second electrodes are formed of a material which is more unlikely to be ionized as compared to the metal, and the first electrodes are in contact with the resistance change layer in an area around the ion metal particles.

Abstract: An aspect of the present disclosure, there is provided a method of fabricating an organic electroluminescence display device, including forming a plurality of first electrodes with a prescribed interval on a substrate, forming a light emission function layer including a light emission layer on at least an upper surface of each of the first electrodes, forming a barrier layer on a upper surface of the light emission function layer between the first electrodes after forming the light emission function layer, forming a second electrode on the first electrode.