Abstract: A solid state image pick-up device with a shutter function including a number of charge coupled devices of vertical overflow domain type is disclosed. A light receiving portion comprises a p.sup.- epitaxial layer arranged on a main surface of an n.sup.+ substrate and an n.sup.+ diffusion surface region is provided in a surface of the p.sup.- layer. A p.sup.+ control gate for controlling a potential barrier between the n.sup.+ diffusion surface region and the p.sup.- epitaxial layer is formed in the epitaxial layer adjacent to the light receiving portion, and a p well region is formed in the epitaxial layer adjacent to the light receiving portion. During a shutter close period, i.e. before a signal charge storing operation, a control voltage applied to the control gate and a reverse bias voltage applied across the n.sup.+ substrate and p.sup.