Patents by Inventor Tomoji Watanabe
Tomoji Watanabe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7485874Abstract: This apparatus for manufacturing semiconductor substrates has support disks and holding units holding semiconductor substrates on the support disks. The holding unit has a stopper which is formed of a conductive material and holds the brim of the semiconductor substrate, a stopper holder which supports the stopper at the outer circumferential portion thereof, a retaining member which retains the stopper to the support disk, and a heating unit which heats the stopper.Type: GrantFiled: August 24, 2006Date of Patent: February 3, 2009Assignee: Sumco CorporationInventors: Seiichi Nakamura, Hideki Nishihata, Riyuusuke Kasamatsu, Kazunori Tsubuku, Akira Bando, Nobuo Tsumaki, Tomoji Watanabe, Kazuo Mera, Tsuneo Hayashi, Yoichi Kurosawa
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Publication number: 20070114458Abstract: This apparatus for manufacturing semiconductor substrates has support disks and holding units holding semiconductor substrates on the support disks. The holding unit has a stopper which is formed of a conductive material and holds the brim of the semiconductor substrate, a stopper holder which supports the stopper at the outer circumferential portion thereof, a retaining member which retains the stopper to the support disk, and a heating unit which heats the stopper.Type: ApplicationFiled: August 24, 2006Publication date: May 24, 2007Inventors: Seiichi Nakamura, Hideki Nishihata, Riyunsuke Kasamatsu, Kazunori Tsubuku, Akira Bando, Nobuo Tsumaki, Tomoji Watanabe, Kazuo Mera, Tsuneo Hayashi, Yoichi Kurosawa
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Patent number: 6656838Abstract: To provide a process for producing a semiconductor, which can form a CVD film at a high film-forming rate with a good step coverage, good uniformities of film forming rate and sheet resistance in the in-plane region of a wafer and a good reproducibility at every wafers, and an apparatus for treating a semiconductor for the process. In a treating chamber kept under pressure of 1,000-50,000 Pa, a wafer is placed on a susceptor, and a film is deposited on the wafer by heating the wafer at 500° C. or higher by a plate-shaped heater through the susceptor, while supplying a feed gas into the treating chamber at 500-50,000 sccm through gas injection nozzles provided near the center of a shower plate provided approximately in parallel with the wafer at a distance of 1-20 mm from the wafer and kept at a temperature of 200° C. or lower.Type: GrantFiled: May 21, 2002Date of Patent: December 2, 2003Assignee: Hitachi, Ltd.Inventors: Tomoji Watanabe, Akiko Kagatsume, Tadanori Yoshida
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Patent number: 6518548Abstract: So as to provide a substrate temperature control system capable of unifying the temperature of the substrate and capable of shortening the temperature elevation time (temperature lowering time), the substrate temperature control system is equipped with a temperature control plate (heating or cooling plate) having a plurality of projections on the surface and serving to set the temperature of the substrate, and a chuck mechanism to fix the substrate in contact to a plurality of the projections by chucking the substrate toward the direction of the temperature control plate.Type: GrantFiled: February 28, 2002Date of Patent: February 11, 2003Assignee: Hitachi, Ltd.Inventors: Masakazu Sugaya, Fumio Murai, Yutaka Kaneko, Masafumi Kanetomo, Shigeki Hirasawa, Tomoji Watanabe, Tatuharu Yamamoto, Katsuhiro Kuroda
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Patent number: 6462411Abstract: A semiconductor wafer processing apparatus comprises a reaction furnace capable of heating inside thereof, a wafer mount for mounting a semiconductor wafer thereon and a transfer device. The wafermount includes an opening which is greater than the semiconductor wafer and which has a circle shape or a shape substantially similar to an outer periphery of the semiconductor wafer, and includes a wafer supporting portion projecting inwardly of the opening for supporting the semiconductor wafer. The transfer device is capable of holding the wafer mount outside the semiconductor wafer as viewed from a vertical direction, and transferring the wafer mount carrying the semiconductor wafer thereon substantially horizontally into and/or out from the reaction furnace.Type: GrantFiled: December 4, 1998Date of Patent: October 8, 2002Assignee: Kokusai Electric Co., LTDInventors: Tomoji Watanabe, Nobuyuki Mise, Toshiyuki Uchino, Norio Suzuki, Yoshihiko Sakurai, Toshiya Uenishi, Yohsuke Inoue, Yasuhiro Inokuchi, Fumihide Ikeda
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Publication number: 20020137334Abstract: [Object]Type: ApplicationFiled: May 21, 2002Publication date: September 26, 2002Inventors: Tomoji Watanabe, Akiko Kagatsume, Tadanori Yoshida
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Publication number: 20020113056Abstract: So as to provide a substrate temperature control system capable of unifying the temperature of the substrate and capable of shortening the temperature elevation time (temperature lowering time), the substrate temperature control system is equipped with a temperature control plate (heating or cooling plate) having a plurality of projections on the surface and serving to set the temperature of the substrate, and a chuck mechanism to fix the substrate in contact to a plurality of the projections by chucking the substrate toward the direction of the temperature control plate.Type: ApplicationFiled: February 28, 2002Publication date: August 22, 2002Applicant: Hitachi, Ltd.Inventors: Masakazu Sugaya, Fumio Murai, Yutaka Kaneko, Masafumi Kanetomo, Shigeki Hirasawa, Tomoji Watanabe, Tatuharu Yamamoto, Katsuhiro Kuroda
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Patent number: 6403479Abstract: To provide a process for producing a semiconductor, which can form a CVD film at a high film-forming rate with a good step coverage, good uniformities of film forming rate and sheet resistance in the in-plane region of a wafer and a good reproducibility at every wafers, and an apparatus for treating a semiconductor for the process. In a treating chamber kept under pressure of 1,000-50,000 Pa, a wafer is placed on a susceptor, and a film is deposited on the wafer by heating the wafer at 500° C. or higher by a plate-shaped heater through the susceptor, while supplying a feed gas into the treating chamber at 500-50,000 sccm through gas injection nozzles provided near the center of a shower plate provided approximately in parallel with the wafer at a distance of 1-20 mm from the wafer and kept at a temperature of 200° C. or lower.Type: GrantFiled: March 16, 2001Date of Patent: June 11, 2002Assignee: Hitachi, Ltd.Inventors: Tomoji Watanabe, Akiko Kagatsume, Tadanori Yoshida
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Patent number: 6394797Abstract: To provide a substrate temperature control system capable of unifying the temperature of the substrate and capable of shortening the temperature elevation time (temperature lowering time), the substrate temperature control system is equipped with a temperature control plate (heating or cooling plate) having a plurality of projections on its surface and acting to set the temperature of the substrate. A chuck mechanism is provided to fix the substrate in contact with a plurality of the projections by chucking the substrate toward the temperature control plate.Type: GrantFiled: March 16, 2000Date of Patent: May 28, 2002Assignee: Hitachi, Ltd.Inventors: Masakazu Sugaya, Fumio Murai, Yutaka Kaneko, Masafumi Kanetomo, Shigeki Hirasawa, Tomoji Watanabe, Tatuharu Yamamoto, Katsuhiro Kuroda
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Patent number: 6288368Abstract: A vacuum heating furnace comprises a translucent container for retaining a heated object and a heating light source for heating a heated object retained in the translucent container. The translucent container has on its surface a tapered portion to receive transmitted light totally reflected on the inner surface of the translucent container at an angle smaller than a critical angle.Type: GrantFiled: April 11, 2000Date of Patent: September 11, 2001Assignees: Hitachi, Ltd., Kokusai Electric Co., Ltd.Inventors: Hiroki Kawada, Tomoji Watanabe, Nobuo Tsumaki, Toshimitsu Miyata
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Patent number: 6093911Abstract: A vacuum heating furnace comprises a translucent container for retaining a heated object and a heating light source for heating a heated object retained in the translucent container. The translucent container has on its surface a tapered portion to receive transmitted light totally reflected on the inner surface of the translucent container at an angle smaller than a critical angle.Type: GrantFiled: May 22, 1998Date of Patent: July 25, 2000Assignee: Hitachi, Ltd.Inventors: Hiroki Kawada, Tomoji Watanabe, Nobuo Tsumaki, Toshimitsu Miyata
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Patent number: 5235399Abstract: An apparatus for measuring the temperature of an object placed in a plasma by utilizing radiation includes measuring means for measuring the intensity of radiation from the object and the intensity of plasma light in different directions at the same time. The measuring means includes a first lens for receiving the radiation from the object and the plasma light, a second lens for converting the output beam of the first lens into parallel light rays, a third lens for focusing the parallel light rays, and an interference filter disposed rotatably between the second lens and the third lens.Type: GrantFiled: June 24, 1991Date of Patent: August 10, 1993Assignee: Hitachi, Ltd.Inventors: Tatehito Usui, Tomoji Watanabe, Junichi Kobayashi, Takehiko Ooshima, Shunji Sasabe
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Patent number: 5001327Abstract: An apparatus for containing semiconductor wafers and performing heat treatment thereon. Heaters disposed in a high temperature furnace form at least one heating space therein. An insertion and retrieval aperture is disposed at the lower portion of each heating space for allowing passage of wafers therethrough. Each of the heating spaces is adapted to receive one or two wafers and to provide simultaneous and uniform heat treatment on the wafers.Type: GrantFiled: September 9, 1988Date of Patent: March 19, 1991Assignee: Hitachi, Ltd.Inventors: Shigeki Hirasawa, Takuji Torii, Tomoji Watanabe, Toshihiro Komatsu, Kazuo Honma, Akihiko Sakai, Tetsuya Takagaki, Toshiyuki Uchino, Hiroto Nagazomo