Abstract: A semiconductor die includes alternating stacks of insulating layers and electrically conductive layers that are laterally separated from each other by first backside trenches that laterally extend along a first horizontal direction, an array of memory stack structures vertically extending through the alternating sacks, an inner edge seal structure that continuously laterally surrounds the alternating stacks, an outer edge seal structure that continuously laterally surrounds the inner edge seal structure, and additional alternating stacks of insulating layers and electrically conductive layers located between the inner edge seal structure and the outer edge seal structure.

Abstract: A semiconductor die includes alternating stacks of insulating layers and electrically conductive layers that are laterally separated from each other by first backside trenches that laterally extend along a first horizontal direction, an array of memory stack structures vertically extending through the alternating sacks, an inner edge seal structure that continuously laterally surrounds the alternating stacks, an outer edge seal structure that continuously laterally surrounds the inner edge seal structure, and additional alternating stacks of insulating layers and electrically conductive layers located between the inner edge seal structure and the outer edge seal structure.