Abstract: By feeding an appropriate voltage as a signal ?TX to a transfer gate TG, a MOS transistor T1 is operated in a threshold region. A potential linearly or natural logarithmically converted by a buried photodiode PD is transferred to an N-type floating diffusion layer FD so as to be fed out, as an image signal, via MOS transistors T3 and T4.

Abstract: When the brightness of a subject detected by a detecting device 4 is higher than a predetermined value, for example 700 [cd/m2], a switching judgment circuit 5 judges that an area sensor (solid-state image-sensing device) 3 should perform logarithmic conversion. In response to this judgment by the switching judgment circuit 5, a switching signal generating circuit 6 outputs a switching signal to instruct the area sensor 3 to perform logarithmic conversion. When the brightness of the subject detected by the detecting device 4 is lower than the predetermined value, for example 700 [cd/m2], a switching judgment circuit 5 judges that the area sensor 3 should perform linear conversion. In response to this judgment by the switching judgment circuit 5, the switching signal generating circuit 6 outputs a switching signal to instruct the area sensor 3 to perform linear conversion.

Abstract: A solid-state imaging device includes: a pixel unit in which pixels, each of which converts light into a pixel signal and accumulates the pixel signal in accordance with a light exposure period, are arranged in a predetermined color layout and first-color pixel horizontal rows containing first-color pixels and second-color pixel horizontal rows containing second-color pixels are alternately arranged in a vertical row direction; readout units that select n (n?2) single-color pixel signals from the first-color or second-color pixels in the first-color or second-color pixel horizontal rows, perform 1/n thinning-out on the selected n pixel signals to reduce the number of pixel signals to 1/n, and read the resultant pixel signal for each of the colors; and column processing units that perform column processing on the pixel signals having undergone the 1/n thinning-out.

Abstract: By feeding an appropriate voltage as a signal ?TX to a transfer gate TG, a MOS transistor T1 is operated in a threshold region. A potential linearly or natural logarithmically converted by a buried photodiode PD is transferred to an N-type floating diffusion layer FD so as to be fed out, as an image signal, via MOS transistors T3 and T4.

Abstract: By feeding an appropriate voltage as a signal ?TX to a transfer gate TG, a MOS transistor T1 , is operated in a threshold region. A potential linearly or natural logarithmically converted by a buried photodiode PD is transferred to an N-type floating diffusion layer FD so as to be fed out, as an image signal, via MOS transistors T3 and T4.

Abstract: There is described an image capturing apparatus, which makes it possible to unify the gradation characteristics all over the captured image into the same characteristic. The image capturing apparatus includes an image sensor that is provided with a first photoelectric conversion characteristic, a second photoelectric conversion characteristic being different from the first photoelectric conversion characteristic and a third photoelectric conversion characteristic being a transient characteristic between the first photoelectric conversion characteristic and the second photoelectric conversion characteristic; and a characteristic converting section to convert the first photoelectric conversion characteristic, the second photoelectric conversion characteristic and the third photoelectric conversion characteristic to a reference photoelectric conversion characteristic.

Abstract: An object of the present invention is to provide a solid-state image sensing device configured to change a bias voltage given to the photoelectric converting section at the time of resetting so that an operative condition of the photoelectric converting section after the resetting can be maintained a constant condition regardless of an amount of the incident light. To achieve the object, an MOS transistor T5 is provided. The drain of the MOS transistor T5 is connected with a gate and a drain of an MOS transistor T2 and the source of the MOS transistor T5configured to be applied a DC voltage VRS. Here, a signal ? V is given, an MOS transistor T4is turned on, and image data is output. A signal ? RS is given and the MOS transistor T5 is turned on. As a result, a gate voltage Vg of the MOS transistor T2 is maintained as a constant voltage value. Then, a reset operation for pixels is stared.

Abstract: A solid-state imaging device includes: a pixel unit in which pixels, each of which converts light into a pixel signal and accumulates the pixel signal in accordance with a light exposure period, are arranged in a predetermined color layout and first-color pixel horizontal rows containing first-color pixels and second-color pixel horizontal rows containing second-color pixels are alternately arranged in a vertical row direction; readout units that select n (n?2) single-color pixel signals from the first-color or second-color pixels in the first-color or second-color pixel horizontal rows, perform 1/n thinning-out on the selected n pixel signals to reduce the number of pixel signals to 1/n, and read the resultant pixel signal for each of the colors; and column processing units that perform column processing on the pixel signals having undergone the 1/n thinning-out.

Abstract: A level shifter (181) shifts a signal level of a noise signal produced from a pixel so that the signal level becomes close to a reference level, and then a level shifter (182) complements the noise signal whose level was shifted by the level shifter (181) by a signal level corresponding to the level shifted by the level shifter (181). After that, the differential amplifier (183) performs subtraction operation between the noise signal that has passed the level shifters (181, 182) and the image signal from the pixel, so as to output the image signal without noises.

Abstract: Switches SHS and RSM are turned on to hold an image signal at a negative electrode of a capacitor Cs, then a switch SHN is turned on to hold a noise signal at a positive electrode of a capacitor Cn. Then a switch RSP is turned on and then a switch MIX is turned on to combine together the image and noise signals thus held and thereby produce, as a voltage signal, a noise-free image signal at the node between the capacitor Cs and the switch MIX. Then a switch Sx is turned on to output the noise-free image signal.

Abstract: A solid-state image-sensing element 1 is fed with, from a coupling controller 4, a signal ?Sv that couples together the photoelectric conversion portions of every predetermined number of vertically adjacent pixels and a signal ?Sh that couples together the photoelectric conversion portions of every predetermined number of horizontally adjacent pixels. This sets the numbers of pixels of which the photoelectric conversion portions are coupled together horizontally and vertically. A pixel output controller 5 feeds a signal that controls the connection between the photoelectric conversion portion and the signal output portion in each pixel, and, within each group of pixels so coupled together, signals are outputted from one of those pixels.

Abstract: Solid-state image-sensing device for acquisition of sensed-image data is described. A photoelectric converter disconnecting switch is turned on to make a forcible reset switch perform resetting. Then, the logarithmic conversion MOS transistor is reset according to the threshold voltage thereof. Then, an output commensurate with the amount of light incident on the photoelectric converter is delivered. The photoelectric converter disconnecting switch is turned on to perform resetting and then turned off. Then, the voltage at the end of the logarithmic conversion MOS transistor that is not connected to the photoelectric converter disconnecting switch is reset according to its threshold voltage. This provides an output unrelated to the incident light. With this sequence of operations, variations in sensitivity among individual pixels can be corrected for without irradiation with uniform light.

Abstract: In a solid-state image-sensing device, by global shuttering, whereby image sensing is performed simultaneously in all the pixels, a potential commensurate with the amount of light incident on a buried diode PD is held in an N-type floating diffusion region FD. Then a noise signal is outputted, and then the potential held in the N-type floating diffusion region FD is transferred to an N-type floating diffusion region FD1 so that an image signal is outputted.

Abstract: Disclosed is a solid-state image sensing device having at least one pixel. The pixel comprises a photoelectric conversion section for outputting an electric signal according to a quantity of incident light, and a sample hold circuit for sampling and holding the electric signal from the photoelectric conversion section and outputting the sampled and held electric signal as an image signal. In this device, a reset voltage for resetting the sample hold circuit obtains at least two different values.

Abstract: There is described an image capturing apparatus, which makes it possible to unify the gradation characteristics all over the captured image into the same characteristic. The image capturing apparatus includes an image sensor that is provided with a first photoelectric conversion characteristic, a second photoelectric conversion characteristic being different from the first photoelectric conversion characteristic and a third photoelectric conversion characteristic being a transient characteristic between the first photoelectric conversion characteristic and the second photoelectric conversion characteristic; and a characteristic converting section to convert the first photoelectric conversion characteristic, the second photoelectric conversion characteristic and the third photoelectric conversion characteristic to a reference photoelectric conversion characteristic.

Abstract: There is described an image capturing unit, which make it possible to prevent occurrence of noses, such as lateral stripes, etc., in the captured image, even if a vertical blanking period is introduced. The unit includes: an image sensor provided with pixels aligned in a two-dimensional matrix pattern, a first vertical scanning circuit and a second vertical scanning circuit, to conduct a line progressive scanning; and a control circuit to control a scanning operation of the image sensor. The image sensor is further provided with a dummy pixel area, and the control circuit controls the scanning operation of the image sensor in such a manner that, when any one of the first vertical scanning circuit and the second vertical scanning circuit enters in a vertical blanking period, the concerned one of the first vertical scanning circuit and the second vertical scanning circuit scans the dummy pixel area.

Abstract: Based on the output signal of an area sensor 1, a level adjustment circuit 2 adjusts the bias voltage fed to the transistors provided within the individual pixels of the area sensor 1 and operating in a subthreshold region and thereby adjusts the level of the output signal of the area sensor 1. According to whether the subject is illuminated with intense or dim light, the level of the output signal is lowered or raised, respectively.

Abstract: An image pickup apparatus comprising: a plurality of pixels each with a photodiode, a logarithmic converter including a logarithmic-converting MOS transistor for converting an output of the photodiode into an electric signal proportional to a logarithmic value of an amount of incident light on the photodiode, and an integration circuit for accumulating an output from the logarithmic converter; a voltage controller for control of a voltage to be applied to the transistor; and an output circuit for receiving signals from the pixels and outputting processed signals. The voltage controller realizes a moving object extraction image pickup state in which an image pickup signal is generated for displaying at least a part of the moving object existing in an image picked-up region at a density different from that of a static background part.

Abstract: An image signal, a noise signal, and an overflow signal outputted from a solid-state image-sensing device are sampled-and-held in capacitors C1, C2, and C3 in a sample-and-hold circuit 17. Thereafter, the image signal and the noise signal in the capacitors C1 and C2 are fed to a subtractor 50 in a correction circuit 18, so that the image signal having noise eliminated therefrom is fed to an operator 51. In this operator 51, according to the value of the overflow signal in the capacitor C3, the image signal having noise eliminated therefrom is corrected by adding thereto an integrated component.

Abstract: A level shifter (181) shifts a signal level of a noise signal produced from a pixel so that the signal level becomes close to a reference level, and then a level shifter (182) complements the noise signal whose level was shifted by the level shifter (181) by a signal level corresponding to the level shifted by the level shifter (181). After that, the differential amplifier (183) performs subtraction operation between the noise signal that has passed the level shifters (181, 182) and the image signal from the pixel, so as to output the image signal without noises.