Patents by Inventor Tomokazu Mukai
Tomokazu Mukai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20200171216Abstract: An objective of the present invention is to provide an adhesion prevention material having improved barrier performance. The objective is achieved by a solid or semi-solid adhesion prevention material comprising a bioabsorbable material, said adhesion prevention material containing, as an active ingredient, a cytostatic factor demonstrating cell proliferation inhibiting effect.Type: ApplicationFiled: August 27, 2018Publication date: June 4, 2020Inventors: Tomokazu MUKAI, Noriaki SHIRAHAMA
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Publication number: 20180221532Abstract: To provide an anti-adhesion material capable of producing an excellent anti-adhesion performance without impairing degradability, handleability, and contact properties in actual use. An anti-adhesion material is provided that contains an ascorbic acid or an ascorbic acid derivative as an antioxidant in a solid or semisolid base body made of a water-soluble polymer and a poly(aliphatic ester). Since the anti-adhesion material has the base body acting as a physical barrier inserted between the surfaces of a wound and the healing on the wound surfaces is promoted by the ascorbic acid or the derivative thereof being sustained-released, the anti-adhesion performance is extremely efficiently produced in a synergistic manner.Type: ApplicationFiled: December 14, 2016Publication date: August 9, 2018Applicants: KAWASUMI LABORATORIES, INC., SHIGA UNIVERSITY OF MEDICAL SCIENCEInventors: Tomokazu MUKAI, Mariko SEI, Tohru TANI, Sumihiro KAMITANI
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SEMICONDUCTOR DEVICE PROVIDED WITH PHOTODIODE, MANUFACTURING METHOD THEREOF, AND OPTICAL DISC DEVICE
Publication number: 20140319643Abstract: A semiconductor device includes: a P-type semiconductor substrate; a first P-type semiconductor layer formed on the P-type semiconductor substrate; a second P-type semiconductor layer formed on the first P-type semiconductor layer and having a lower P-type impurity concentration than the first P-type semiconductor layer; an N-type semiconductor layer, which will form a cathode region, formed on the second P-type semiconductor layer; a first P-type diffusion layer formed by diffusing a P-type impurity in a partial region of the second P-type semiconductor layer; a second P-type diffusion layer formed by diffusing a P-type impurity in the second P-type semiconductor layer so as to be present adjacently beneath the first P-type diffusion layer at a lower P-type impurity concentration than the first P-type diffusion layer; and a photodiode formed in such a manner that the N-type semiconductor layer and the first P-type diffusion layer are isolated from each other.Type: ApplicationFiled: July 7, 2014Publication date: October 30, 2014Inventors: Hiroshi Yumoto, Shuji Yoneda, Tomokazu Mukai, Katsuhiko Takeuchi -
Patent number: 8821900Abstract: An object of the present invention is to provide an anti-adhesion material having sufficient in vivo degradability and excellent anti-adhesion characteristics, and also superior to conventional ones in terms of handling properties under wet conditions. The anti-adhesion material (1) of the present invention has a sheet-like base layer (10) containing a water soluble polymer (e.g., pullulan), a first cover layer (20) placed on a surface on one side of the base layer (10) and containing an aliphatic ester, and a second cover layer (30) placed on a surface on the other side of the base layer (10) and containing an aliphatic ester. The optical thickness of each of the first cover layer (20) and the second cover layer (30) is set to be 27 nm or greater and smaller than 160 nm.Type: GrantFiled: December 27, 2010Date of Patent: September 2, 2014Assignees: Kawasumi Laboratories, Inc., Shiga University of Medical ScienceInventors: Toru Tani, Sumihiro Kamitani, Tomokazu Mukai
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Semiconductor device provided with photodiode, manufacturing method thereof, and optical disc device
Patent number: 8803272Abstract: A semiconductor device includes: a P-type semiconductor substrate; a first P-type semiconductor layer formed on the P-type semiconductor substrate; a second P-type semiconductor layer formed on the first P-type semiconductor layer and having a lower P-type impurity concentration than the first P-type semiconductor layer; an N-type semiconductor layer, which will form a cathode region, formed on the second P-type semiconductor layer; a first P-type diffusion layer formed by diffusing a P-type impurity in a partial region of the second P-type semiconductor layer; a second P-type diffusion layer formed by diffusing a P-type impurity in the second P-type semiconductor layer so as to be present adjacently beneath the first P-type diffusion layer at a lower P-type impurity concentration than the first P-type diffusion layer; and a photodiode formed in such a manner that the N-type semiconductor layer and the first P-type diffusion layer are isolated from each other.Type: GrantFiled: November 30, 2009Date of Patent: August 12, 2014Assignee: Sony CorporationInventors: Hiroshi Yumoto, Shuji Yoneda, Tomokazu Mukai, Katsuhiko Takeuchi -
Publication number: 20120301515Abstract: An object of the present invention is to provide an anti-adhesion material having sufficient in vivo degradability and excellent anti-adhesion characteristics, and also superior to conventional ones in terms of handling properties under wet conditions. The anti-adhesion material (1) of the present invention has a sheet-like base layer (10) containing a water soluble polymer (e.g., pullulan), a first cover layer (20) placed on a surface on one side of the base layer (10) and containing an aliphatic ester, and a second cover layer (30) placed on a surface on the other side of the base layer (10) and containing an aliphatic ester. The optical thickness of each of the first cover layer (20) and the second cover layer (30) is set to be 27 nm or greater and smaller than 160 nm.Type: ApplicationFiled: December 27, 2010Publication date: November 29, 2012Applicants: SHIGA UNIVERSITY OF MEDICAL SCIENCE, KAWASUMI LABORATORIES, INC.Inventors: Toru Tani, Sumihiro Kamitani, Tomokazu Mukai
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Semiconductor device provided with photodiode, manufacturing method thereof, and optical disc device
Publication number: 20100155875Abstract: A semiconductor device includes: a P-type semiconductor substrate; a first P-type semiconductor layer formed on the P-type semiconductor substrate; a second P-type semiconductor layer formed on the first P-type semiconductor layer and having a lower P-type impurity concentration than the first P-type semiconductor layer; an N-type semiconductor layer, which will form a cathode region, formed on the second P-type semiconductor layer; a first P-type diffusion layer formed by diffusing a P-type impurity in a partial region of the second P-type semiconductor layer; a second P-type diffusion layer formed by diffusing a P-type impurity in the second P-type semiconductor layer so as to be present adjacently beneath the first P-type diffusion layer at a lower P-type impurity concentration than the first P-type diffusion layer; and a photodiode formed in such a manner that the N-type semiconductor layer and the first P-type diffusion layer are isolated from each other.Type: ApplicationFiled: November 30, 2009Publication date: June 24, 2010Applicant: Sony CorporationInventors: Hiroshi Yumoto, Shuji Yoneda, Tomokazu Mukai, Katsuhiko Takeuchi -
Patent number: 7736393Abstract: Provided are an artificial dura mater having a laminated constitution of at least two layers of in vivo degradable polymers, at least one layer of them being a substrate layer, the substrate layer being formed of a lactic acid/glycolic acid/?-caprolactone copolymer, the copolymer having a component molar ratio of 60-85:3-15:10-30 mol % and the copolymer having an average chain length that satisfies the following expressions (1) to (3) and a process for the production thereof, and when this artificial dura mater is used, no liquid leakage is caused since the bloating of suture holes is small, and the period of time for which it retains its strength is suitably a little longer than the period of time required for the regeneration of an autodura mater, 2<L(LA)<[LA%/(LA%+GA%+CL%)]×X×0.058??(1) 1<L(GA)<[GA%/(LA%+GA%+CL%)]×X×0.58??(2) 1<L(CL)<[CL%/(LA%+GA%+CL%)]×X×0.Type: GrantFiled: April 18, 2005Date of Patent: June 15, 2010Assignee: Kawasumi Laboratories, Inc.Inventors: Noriaki Shirahama, Tomokazu Mukai, Takao Okada, Yukari Imamura, Yoshimichi Fujiyama
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Publication number: 20070233275Abstract: Provided are an artificial dura mater having a laminated constitution of at least two layers of in vivo degradable polymers, at least one layer of them being a substrate layer, the substrate layer being formed of a lactic acid/glycolic acid/?-caprolactone copolymer, the copolymer having a component molar ratio of 60-85:3-15:10-30 mol % and the copolymer having an average chain length that satisfies the following expressions (1) to (3) and a process for the production thereof, and when this artificial dura mater is used, no liquid leakage is caused since the bloating of suture holes is small, and the period of time for which it retains its strength is suitably a little longer than the period of time required for the regeneration of an autodura mater, 2<L(LA)<[LA %/(LA %+GA %+CL %)]×X×0. 058 ??(1) 1<L(GA)<[GA %/(LA %+GA %+CL %)]×X×0. 58 ??(2) 1<L(CL)<[CL %/(LA %+GA %+CL %) ×X×0.Type: ApplicationFiled: April 18, 2005Publication date: October 4, 2007Applicant: KAWASUMI LABORATORIES, INC.Inventors: Noriaki Shirahama, Tomokazu Mukai, Takao Okada, Yukari Imamura, Yoshimichi Fujiyama