Patents by Inventor Tomokazu Mukai

Tomokazu Mukai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200171216
    Abstract: An objective of the present invention is to provide an adhesion prevention material having improved barrier performance. The objective is achieved by a solid or semi-solid adhesion prevention material comprising a bioabsorbable material, said adhesion prevention material containing, as an active ingredient, a cytostatic factor demonstrating cell proliferation inhibiting effect.
    Type: Application
    Filed: August 27, 2018
    Publication date: June 4, 2020
    Inventors: Tomokazu MUKAI, Noriaki SHIRAHAMA
  • Publication number: 20180221532
    Abstract: To provide an anti-adhesion material capable of producing an excellent anti-adhesion performance without impairing degradability, handleability, and contact properties in actual use. An anti-adhesion material is provided that contains an ascorbic acid or an ascorbic acid derivative as an antioxidant in a solid or semisolid base body made of a water-soluble polymer and a poly(aliphatic ester). Since the anti-adhesion material has the base body acting as a physical barrier inserted between the surfaces of a wound and the healing on the wound surfaces is promoted by the ascorbic acid or the derivative thereof being sustained-released, the anti-adhesion performance is extremely efficiently produced in a synergistic manner.
    Type: Application
    Filed: December 14, 2016
    Publication date: August 9, 2018
    Applicants: KAWASUMI LABORATORIES, INC., SHIGA UNIVERSITY OF MEDICAL SCIENCE
    Inventors: Tomokazu MUKAI, Mariko SEI, Tohru TANI, Sumihiro KAMITANI
  • Publication number: 20140319643
    Abstract: A semiconductor device includes: a P-type semiconductor substrate; a first P-type semiconductor layer formed on the P-type semiconductor substrate; a second P-type semiconductor layer formed on the first P-type semiconductor layer and having a lower P-type impurity concentration than the first P-type semiconductor layer; an N-type semiconductor layer, which will form a cathode region, formed on the second P-type semiconductor layer; a first P-type diffusion layer formed by diffusing a P-type impurity in a partial region of the second P-type semiconductor layer; a second P-type diffusion layer formed by diffusing a P-type impurity in the second P-type semiconductor layer so as to be present adjacently beneath the first P-type diffusion layer at a lower P-type impurity concentration than the first P-type diffusion layer; and a photodiode formed in such a manner that the N-type semiconductor layer and the first P-type diffusion layer are isolated from each other.
    Type: Application
    Filed: July 7, 2014
    Publication date: October 30, 2014
    Inventors: Hiroshi Yumoto, Shuji Yoneda, Tomokazu Mukai, Katsuhiko Takeuchi
  • Patent number: 8821900
    Abstract: An object of the present invention is to provide an anti-adhesion material having sufficient in vivo degradability and excellent anti-adhesion characteristics, and also superior to conventional ones in terms of handling properties under wet conditions. The anti-adhesion material (1) of the present invention has a sheet-like base layer (10) containing a water soluble polymer (e.g., pullulan), a first cover layer (20) placed on a surface on one side of the base layer (10) and containing an aliphatic ester, and a second cover layer (30) placed on a surface on the other side of the base layer (10) and containing an aliphatic ester. The optical thickness of each of the first cover layer (20) and the second cover layer (30) is set to be 27 nm or greater and smaller than 160 nm.
    Type: Grant
    Filed: December 27, 2010
    Date of Patent: September 2, 2014
    Assignees: Kawasumi Laboratories, Inc., Shiga University of Medical Science
    Inventors: Toru Tani, Sumihiro Kamitani, Tomokazu Mukai
  • Patent number: 8803272
    Abstract: A semiconductor device includes: a P-type semiconductor substrate; a first P-type semiconductor layer formed on the P-type semiconductor substrate; a second P-type semiconductor layer formed on the first P-type semiconductor layer and having a lower P-type impurity concentration than the first P-type semiconductor layer; an N-type semiconductor layer, which will form a cathode region, formed on the second P-type semiconductor layer; a first P-type diffusion layer formed by diffusing a P-type impurity in a partial region of the second P-type semiconductor layer; a second P-type diffusion layer formed by diffusing a P-type impurity in the second P-type semiconductor layer so as to be present adjacently beneath the first P-type diffusion layer at a lower P-type impurity concentration than the first P-type diffusion layer; and a photodiode formed in such a manner that the N-type semiconductor layer and the first P-type diffusion layer are isolated from each other.
    Type: Grant
    Filed: November 30, 2009
    Date of Patent: August 12, 2014
    Assignee: Sony Corporation
    Inventors: Hiroshi Yumoto, Shuji Yoneda, Tomokazu Mukai, Katsuhiko Takeuchi
  • Publication number: 20120301515
    Abstract: An object of the present invention is to provide an anti-adhesion material having sufficient in vivo degradability and excellent anti-adhesion characteristics, and also superior to conventional ones in terms of handling properties under wet conditions. The anti-adhesion material (1) of the present invention has a sheet-like base layer (10) containing a water soluble polymer (e.g., pullulan), a first cover layer (20) placed on a surface on one side of the base layer (10) and containing an aliphatic ester, and a second cover layer (30) placed on a surface on the other side of the base layer (10) and containing an aliphatic ester. The optical thickness of each of the first cover layer (20) and the second cover layer (30) is set to be 27 nm or greater and smaller than 160 nm.
    Type: Application
    Filed: December 27, 2010
    Publication date: November 29, 2012
    Applicants: SHIGA UNIVERSITY OF MEDICAL SCIENCE, KAWASUMI LABORATORIES, INC.
    Inventors: Toru Tani, Sumihiro Kamitani, Tomokazu Mukai
  • Publication number: 20100155875
    Abstract: A semiconductor device includes: a P-type semiconductor substrate; a first P-type semiconductor layer formed on the P-type semiconductor substrate; a second P-type semiconductor layer formed on the first P-type semiconductor layer and having a lower P-type impurity concentration than the first P-type semiconductor layer; an N-type semiconductor layer, which will form a cathode region, formed on the second P-type semiconductor layer; a first P-type diffusion layer formed by diffusing a P-type impurity in a partial region of the second P-type semiconductor layer; a second P-type diffusion layer formed by diffusing a P-type impurity in the second P-type semiconductor layer so as to be present adjacently beneath the first P-type diffusion layer at a lower P-type impurity concentration than the first P-type diffusion layer; and a photodiode formed in such a manner that the N-type semiconductor layer and the first P-type diffusion layer are isolated from each other.
    Type: Application
    Filed: November 30, 2009
    Publication date: June 24, 2010
    Applicant: Sony Corporation
    Inventors: Hiroshi Yumoto, Shuji Yoneda, Tomokazu Mukai, Katsuhiko Takeuchi
  • Patent number: 7736393
    Abstract: Provided are an artificial dura mater having a laminated constitution of at least two layers of in vivo degradable polymers, at least one layer of them being a substrate layer, the substrate layer being formed of a lactic acid/glycolic acid/?-caprolactone copolymer, the copolymer having a component molar ratio of 60-85:3-15:10-30 mol % and the copolymer having an average chain length that satisfies the following expressions (1) to (3) and a process for the production thereof, and when this artificial dura mater is used, no liquid leakage is caused since the bloating of suture holes is small, and the period of time for which it retains its strength is suitably a little longer than the period of time required for the regeneration of an autodura mater, 2<L(LA)<[LA%/(LA%+GA%+CL%)]×X×0.058??(1) 1<L(GA)<[GA%/(LA%+GA%+CL%)]×X×0.58??(2) 1<L(CL)<[CL%/(LA%+GA%+CL%)]×X×0.
    Type: Grant
    Filed: April 18, 2005
    Date of Patent: June 15, 2010
    Assignee: Kawasumi Laboratories, Inc.
    Inventors: Noriaki Shirahama, Tomokazu Mukai, Takao Okada, Yukari Imamura, Yoshimichi Fujiyama
  • Publication number: 20070233275
    Abstract: Provided are an artificial dura mater having a laminated constitution of at least two layers of in vivo degradable polymers, at least one layer of them being a substrate layer, the substrate layer being formed of a lactic acid/glycolic acid/?-caprolactone copolymer, the copolymer having a component molar ratio of 60-85:3-15:10-30 mol % and the copolymer having an average chain length that satisfies the following expressions (1) to (3) and a process for the production thereof, and when this artificial dura mater is used, no liquid leakage is caused since the bloating of suture holes is small, and the period of time for which it retains its strength is suitably a little longer than the period of time required for the regeneration of an autodura mater, 2<L(LA)<[LA %/(LA %+GA %+CL %)]×X×0. 058 ??(1) 1<L(GA)<[GA %/(LA %+GA %+CL %)]×X×0. 58 ??(2) 1<L(CL)<[CL %/(LA %+GA %+CL %) ×X×0.
    Type: Application
    Filed: April 18, 2005
    Publication date: October 4, 2007
    Applicant: KAWASUMI LABORATORIES, INC.
    Inventors: Noriaki Shirahama, Tomokazu Mukai, Takao Okada, Yukari Imamura, Yoshimichi Fujiyama