Patents by Inventor Tomokazu Ogomi

Tomokazu Ogomi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10976382
    Abstract: Even in a case in which a comb-teeth shape is provided at an end portion of a cover covering an opening in a magnetic shield case that accommodates a magnetic sensor, the present disclosure obtains a magnetic sensor device and a housing therefor capable of maintaining the strength of a comb-teeth portion. The magnetic sensor device and the housing therefor include: a comb-teeth portion in which protrusions are formed in the shape of comb teeth along an intersecting direction intersecting a conveying direction, the comb-teeth portion being formed at an end portion of a cover with respect to the conveying direction, the cover covering an opening in a magnetic shield case that accommodates a magnetic sensor; and support members formed on a lateral face of the magnetic shield case, the support members supporting the protrusions on the side opposite to the conveying path.
    Type: Grant
    Filed: December 20, 2017
    Date of Patent: April 13, 2021
    Assignee: Mitsubishi Electric Corporation
    Inventors: Hideki Matsui, Tomokazu Ogomi, Sadaaki Yoshioka
  • Publication number: 20200400759
    Abstract: In a magnetic sensor device, a sheet-tike detection object transported along a transport plane is magnetized by a magnetizing magnet that forms a magnetization magnetic field in which magnitude of a magnetic field component parallel to the transport plane is larger than or equal to a saturation magnetic field of a second magnetic body having a second coercivity larger than a first coercivity. The magnetic sensor device includes: a bias magnet that forms a bias magnetic field in which magnitude of a magnetic field component parallel to the plane of the detection object is larger than the first coercivity and less than the second coercivity in the bias magnetic field at the plane of the detection object; and a magnetoresistive effect element chip disposed at the bias magnet and facing the plane of the detection object.
    Type: Application
    Filed: September 8, 2020
    Publication date: December 24, 2020
    Applicant: Mitsubishi Electric Corporation
    Inventors: Tomokazu OGOMI, Kenji SHIMOHATA
  • Publication number: 20200358918
    Abstract: A capacitance detection device includes a first electrode (1) and a second electrode (2) at least partially facing each other with a conveyance path (5) therebetween, the conveyance path extending along a conveyance direction in which a sheet-like detection object (3) is conveyed, an oscillating circuit to form an electric field (9) between the first electrode (1) and the second electrode (2), a detection circuit to detect a change in capacitance between the first electrode (1) and the second electrode (2), a first board (11) and a second board (12) including at least one of the oscillating circuit or the detection circuit, an insulative first plate (6) arranged between the first electrode (1) and the conveyance path (5), and an insulative second plate (7) arranged between the second electrode (2) and the conveyance path (5).
    Type: Application
    Filed: December 26, 2018
    Publication date: November 12, 2020
    Applicant: Mitsubishi Electric Corporation
    Inventors: Tomokazu OGOMI, Naoyuki TOKIDA, Hideki MATSUI, Tatsuya KUNIEDA
  • Patent number: 10663320
    Abstract: A magnetic sensor device includes a magnet to form a magnetic field in a conveyance path of a detection target, a magnetoresistance effect element to output a change in the magnetic field as a change in a resistance value, a casing to enclose or hold the magnet and the magnetoresistance effect element, a cover to cover the magnetoresistance effect element and form a conveyance path surface that is a surface along the conveyance path, and a signal amplification board having a signal amplification IC disposed on an intersection surface that intersects the conveyance path surface. The signal amplification IC amplifies the change in the resistance value that is output by the magnetoresistance effect element. The change in the resistance value depends on the change in the magnetic field caused due to conveyance of the detection target on the conveyance path surface.
    Type: Grant
    Filed: October 24, 2017
    Date of Patent: May 26, 2020
    Assignee: Mitsubishi Electric Corporation
    Inventors: Hiroaki Kahara, Masaaki Okada, Tatsuya Kunieda, Tomokazu Ogomi, Hideki Matsui, Sadaaki Yoshioka
  • Patent number: 10634739
    Abstract: A magnetic sensor device (10) includes a magnetic sensor unit including a magnetoresistive element mounted on a sensor board extending in a longitudinal direction and a magnet (3) located on a surface of the sensor board opposite to a surface on which the magnetoresistive element is mounted, a housing supporting the magnetic sensor unit, a magnetic shield unit (4) covering side surfaces and a bottom surface of the housing, and a cover covering an upper portion of the housing. The magnetic shield unit (4) has an opening (4o) facing in Z-axis direction from the magnetoresistive element toward a transport path of a sensing target. The opening (4o) is defined by two long sides in the longitudinal direction and two short sides in a lateral direction. The two long sides of the magnetic shield unit (4) are nearer to the sensing target in Z-axis direction than the two short sides.
    Type: Grant
    Filed: July 6, 2018
    Date of Patent: April 28, 2020
    Assignee: Mitsubishi Electric Corporation
    Inventors: Tomokazu Ogomi, Kenji Shimohata, Hideki Matsui, Sadaaki Yoshioka
  • Patent number: 10630251
    Abstract: A bias current circuit includes: an N-type MOSFET in which a gate terminal and a drain terminal are connected to a current source, and N-type MOSFETs in which respective drain terminals are connected to respective bias current output terminals and source terminals are grounded. The bias current circuit further includes: an N-type MOSFET in which one terminal type, either a drain terminal or a source terminal, is connected to the gate terminal of the N-type MOSFET, and the other terminal type is connected to the gate terminals of the N-type MOSFETs, and an N-type MOSFET in which a drain terminal is connected to the gate terminals of the N-type MOSFETs and a source terminal is grounded. A control signal, that is LOW when the bias current is supplied and is HIGH when the bias current is not supplied, is input to the gate terminal of the N-type MOSFET, and an inverse signal of the control signal is input to the gate terminal of the N-type MOSFET.
    Type: Grant
    Filed: May 11, 2017
    Date of Patent: April 21, 2020
    Assignee: Mitsubishi Electric Corporation
    Inventors: Miki Kagano, Tomokazu Ogomi
  • Patent number: 10620015
    Abstract: A magnetic sensor device includes: a magnetic circuit for forming a magnetic field, a magnetoresistance effect element, and a heat dissipater. The magnetoresistance effect element outputs changes in the magnetic field as changes in a resistance value, and is arranged on a surface (of a +Z side) of the magnetic circuit at a conveyance path side thereof. The heat dissipater is arranged in close contact with the magnetic circuit at the opposite side thereof (?Z side) from the conveyance path.
    Type: Grant
    Filed: October 10, 2018
    Date of Patent: April 14, 2020
    Assignee: Mitsubishi Electric Corporation
    Inventors: Hideki Matsui, Tatsuya Kunieda, Tomokazu Ogomi, Masaaki Okada, Sadaaki Yoshioka
  • Patent number: 10591555
    Abstract: A magnetic sensor device includes: a magnet; a magnetic-resistance-effect-element mounted substrate on which a magnetic-resistance-effect-element mounted body is mounted on a surface thereof opposite to a surface thereof facing the magnet, the magnetic-resistance-effect-element mounted body extending in the longitudinal direction of the magnet; a case that accommodates or retains the magnet and the magnetic-resistance-effect-element mounted substrate; and a magnetic shield that covers the case except for the surface of the magnetic-resistance-effect-element mounted substrate on which is mounted the magnetic-resistance-effect-element mounted body. The magnetic shield covers the case at a position corresponding to the surface of the magnetic-resistance-effect-element mounted substrate facing the magnet, or from the position corresponding to the surface of the magnetic-resistance-effect-element mounted substrate facing the magnet to a side of the case opposite to the magnet.
    Type: Grant
    Filed: March 14, 2017
    Date of Patent: March 17, 2020
    Assignee: Mitsubishi Electric Corporation
    Inventors: Hideki Matsui, Tomokazu Ogomi, Masaaki Okada, Kenji Shimohata, Sadaaki Yoshioka
  • Patent number: 10564228
    Abstract: The magnetoresistive effect element unit includes an anisotropic magnetoresistive effect element and a conductive reset line that, as viewed in a direction orthogonal to both a magnetic sensing direction x? and an easy magnetization direction y? of the anisotropic magnetoresistive effect element, passes through a center of the anisotropic magnetoresistive effect element, extends in a direction inclined from the easy magnetization direction y? so as to form an angle of 45° or less with the easy magnetization direction y?, and is parallel to a plane including the magnetic sensing direction x? and the easy magnetization direction y?. As viewed in the direction orthogonal to both the magnetic sensing direction x? and the easy magnetization direction y?, the reset line has a width that covers an entirety of the anisotropic magnetoresistive effect element.
    Type: Grant
    Filed: January 15, 2018
    Date of Patent: February 18, 2020
    Assignee: Mitsubishi Electric Corporation
    Inventors: Tomokazu Ogomi, Kenji Shimohata, Jin Inoue, Tetsuji Imamura, Yoshinori Yamaguchi, Takashi Daimon
  • Publication number: 20200036350
    Abstract: A bias current circuit includes: an N-type MOSFET in which a gate terminal and a drain terminal are connected to a current source, and N-type MOSFETs in which respective drain terminals are connected to respective bias current output terminals and source terminals are grounded. The bias current circuit further includes: an N-type MOSFET in which one terminal type, either a drain terminal or a source terminal, is connected to the gate terminal of the N-type MOSFET, and the other terminal type is connected to the gate terminals of the N-type MOSFETs, and an N-type MOSFET in which a drain terminal is connected to the gate terminals of the N-type MOSFETs and a source terminal is grounded. A control signal, that is LOW when the bias current is supplied and is HIGH when the bias current is not supplied, is input to the gate terminal of the N-type MOSFET, and an inverse signal of the control signal is input to the gate terminal of the N-type MOSFET.
    Type: Application
    Filed: May 11, 2017
    Publication date: January 30, 2020
    Applicant: Mitsubishi Electric Corporation
    Inventors: Miki KAGANO, Tomokazu OGOMI
  • Publication number: 20200003852
    Abstract: A magnetic sensor device (10) includes a magnetic sensor unit including a magnetoresistive element mounted on a sensor board extending in a longitudinal direction and a magnet (3) located on a surface of the sensor board opposite to a surface on which the magnetoresistive element is mounted, a housing supporting the magnetic sensor unit, a magnetic shield unit (4) covering side surfaces and a bottom surface of the housing, and a cover covering an upper portion of the housing. The magnetic shield unit (4) has an opening (4o) facing in Z-axis direction from the magnetoresistive element toward a transport path of a sensing target. The opening (4o) is defined by two long sides in the longitudinal direction and two short sides in a lateral direction. The two long sides of the magnetic shield unit (4) are nearer to the sensing target in Z-axis direction than the two short sides.
    Type: Application
    Filed: July 6, 2018
    Publication date: January 2, 2020
    Applicant: Mitsubishi Electric Corporation
    Inventors: Tomokazu OGOMI, Kenji SHIMOHATA, Hideki MATSUI, Sadaaki YOSHIOKA
  • Publication number: 20190377036
    Abstract: In a magnetic sensor device, a sheet-like detection object transported along a transport plane is magnetized by a magnetizing magnet that forms a magnetization magnetic field in which magnitude of a magnetic field component parallel to the transport plane is larger than or equal to a saturation magnetic field of a second magnetic body having a second coercivity larger than a first coercivity. The magnetic sensor device includes: a bias magnet that forms a bias magnetic field in which magnitude of a magnetic field component parallel to the plane of the detection object is larger than the first coercivity and less than the second coercivity in the bias magnetic field at the plane of the detection object; and a magnetoresistive effect element chip disposed at the bias magnet and facing the plane of the detection object.
    Type: Application
    Filed: May 1, 2017
    Publication date: December 12, 2019
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Tomokazu OGOMI, Kenji SHIMOHATA
  • Publication number: 20190360838
    Abstract: A magnetic sensor device includes a magnet to form a magnetic field in a conveyance path of a detection target, a magnetoresistance effect element to output a change in the magnetic field as a change in a resistance value, a casing to enclose or hold the magnet and the magnetoresistance effect element, a cover to cover the magnetoresistance effect element and form a conveyance path surface that is a surface along the conveyance path, and a signal amplification board having a signal amplification IC disposed on an intersection surface that intersects the conveyance path surface. The signal amplification IC amplifies the change in the resistance value that is output by the magnetoresistance effect element. The change in the resistance value depends on the change in the magnetic field caused due to conveyance of the detection target on the conveyance path surface.
    Type: Application
    Filed: October 24, 2017
    Publication date: November 28, 2019
    Applicant: Mitsubishi Electric Corporation
    Inventors: Hiroaki KAHARA, Masaaki OKADA, Tatsuya KUNIEDA, Tomokazu OGOMI, Hideki MATSUI, Sadaaki YOSHIOKA
  • Publication number: 20190293729
    Abstract: Even in a case in which a comb-teeth shape is provided at an end portion of a cover covering an opening in a magnetic shield case that accommodates a magnetic sensor, the present disclosure obtains a magnetic sensor device and a housing therefor capable of maintaining the strength of a comb-teeth portion. The magnetic sensor device and the housing therefor include: a comb-teeth portion in which protrusions are formed in the shape of comb teeth along an intersecting direction intersecting a conveying direction, the comb-teeth portion being formed at an end portion of a cover with respect to the conveying direction, the cover covering an opening in a magnetic shield case that accommodates a magnetic sensor; and support members formed on a lateral face of the magnetic shield case, the support members supporting the protrusions on the side opposite to the conveying path.
    Type: Application
    Filed: December 20, 2017
    Publication date: September 26, 2019
    Applicant: Mitsubishi Electric Corporation
    Inventors: Hideki MATSUI, Tomokazu OGOMI, Sadaaki YOSHIOKA
  • Patent number: 10353021
    Abstract: A magnetic sensor device includes: a magnetic field generator, disposed at one surface side of a sheet-like to-be-detected object including a magnetic component, to generate an intersecting magnetic field intersecting the object; and a magnetoresistive effect element disposed between the object and the magnetic field generator, having a resistance value changing in accordance with change of a component of the intersecting magnetic field in a conveyance direction along which the object is conveyed, when the object is conveyed. The magnetoresistive effect element includes resistive elements adjacent to each other in the conveyance direction and interconnected by a bridge, disposed in linear symmetry relative to an axis perpendicular to the conveyance direction and extending through a center of the bridge. A position in the conveyance direction of the bridge center of the magnetoresistive effect element coincides with a position in the conveyance direction of the magnetic field generator center.
    Type: Grant
    Filed: July 24, 2015
    Date of Patent: July 16, 2019
    Assignee: Mitsubishi Electric Corporation
    Inventors: Tomokazu Ogomi, Kenji Shimohata, Hiroyuki Asano, Jin Inoue
  • Patent number: 10347068
    Abstract: A capacitance detection device includes a first electrode and a second electrode that at least partially face each other on opposite sides of a transfer path. An oscillator circuit forms an electric field between the first electrode and the second electrode. A detection circuit detects a change in capacitance between the first electrode and the second electrode. At least one of the oscillator circuit and the detection circuit is included in each of a first board and a second board. The first board is disposed such that a side surface of the first board faces the first electrode in an electric field direction, and the second board is disposed such that a side surface of the second board faces the second electrode in the electric field direction.
    Type: Grant
    Filed: September 25, 2017
    Date of Patent: July 9, 2019
    Assignee: Mitsubishi Electric Corporation
    Inventors: Miki Kagano, Hiroshi Araki, Toshiaki Shoji, Hideki Matsui, Kazuya Makabe, Tomoyuki Miyata, Tomokazu Ogomi
  • Publication number: 20190204396
    Abstract: The magnetoresistive effect element unit includes an anisotropic magnetoresistive effect element and a conductive reset line that, as viewed in a direction orthogonal to both a magnetic sensing direction x? and an easy magnetization direction y? of the anisotropic magnetoresistive effect element, passes through a center of the anisotropic magnetoresistive effect element, extends in a direction inclined from the easy magnetization direction y? so as to form an angle of 45° or less with the easy magnetization direction y?, and is parallel to a plane including the magnetic sensing direction x? and the easy magnetization direction y?. As viewed in the direction orthogonal to both the magnetic sensing direction x? and the easy magnetization direction y?, the reset line has a width that covers an entirety of the anisotropic magnetoresistive effect element.
    Type: Application
    Filed: January 15, 2018
    Publication date: July 4, 2019
    Applicant: Mitsubishi Electric Corporation
    Inventors: Tomokazu OGOMI, Kenji SHIMOHATA, Jin INOUE, Tetsuji IMAMURA, Yoshinori YAMAGUCHI, Takashi DAIMON
  • Patent number: D866372
    Type: Grant
    Filed: December 19, 2018
    Date of Patent: November 12, 2019
    Assignee: Mitsubishi Electric Corporation
    Inventors: Tomokazu Ogomi, Kenji Shimohata, Hideki Matsui, Sadaaki Yoshioka
  • Patent number: D867182
    Type: Grant
    Filed: December 19, 2018
    Date of Patent: November 19, 2019
    Assignee: Mitsubishi Electric Corporation
    Inventors: Tomokazu Ogomi, Kenji Shimohata, Hideki Matsui, Sadaaki Yoshioka
  • Patent number: D891280
    Type: Grant
    Filed: January 21, 2019
    Date of Patent: July 28, 2020
    Assignee: Mitsubishi Electric Corporation
    Inventors: Toru Aramaki, Tomokazu Ogomi, Hideki Matsui, Hiroshi Koike