Abstract: Provided is thin-film formation system including: a first conveying mechanism to convey a substrate and a deposition mask to a substrate carry-in position; a second conveying mechanism to convey the substrate and the deposition mask aligned by an alignment mechanism placed at the substrate carry-in position; a film formation mechanism to laminate a layer of organic material on the substrate in a film formation interval of the second conveying mechanism; and a third conveying mechanism to convey the substrate and the deposition mask which have passed the film formation interval from a carry-out position, in which at least one of the first conveying mechanism and the third conveying mechanism is placed parallel to the second conveying mechanism.

Abstract: A method for depositing a film includes preparing a deposition material that is purified by sublimation, solidifying the purified deposition material in an environment having a reduced water content, conveying the solidified deposition material into a film deposition chamber through an environment having a reduced water content, and depositing a film of the solidified deposition material onto a substrate in the film deposition chamber.

Abstract: A plasma-processing apparatus having a high frequency power application electrode in which plasma is generated by supplying VHF power to the high frequency power application electrode. The plasma-processing apparatus has an impedance-matching equipment comprising a capacitive element and an inductive element, which are mutually connected in series. The apparatus is arranged so that the capacitive element and the inductive element of the impedance-matching equipment are symmetrical with respect to the center of the high frequency power application electrode.

Abstract: In a vapor deposition method of forming a film of an organic compound on a substrate, a material containing portion filled with a vapor deposition material is heated, to thereby evaporate or sublimate the vapor deposition material and discharge the vapor deposition material to a film formation space of a vacuum chamber through a plurality of pipings connected to the material containing portion, and a piping having a smaller conductance among the pipings having different conductances is provided with a flow rate adjusting mechanism for controlling an amount of the vapor deposition material released into the vacuum chamber, whereby a film formation speed can be adjusted finely.

Abstract: A plate high-frequency electrode for supplying a high-frequency power of the VHF band and a grounding electrode are disposed in opposition to each other at an interval of less than 8 mm in a vacuum vessel; at least a silane-based gas and nitrogen gas as source gases are introduced into a reaction space of the vacuum vessel, and a silicon nitride deposited film is formed with the pressure of the reaction space being kept at 40 to 133. Thereby, a silicon nitride film with good quality can be obtained.

Abstract: A plasma-processing apparatus having a high frequency power application electrode in which a plasma is generated by supplying a VHF power to said high frequency power application electrode, characterized in that said plasma-processing apparatus has an impedance matching equipment comprising a capacitive element and an inductive element which are mutually connected in series connection and which is arranged such that said capacitive element and said inductive element of said impedance matching equipment are symmetrical to the center of said high frequency power application electrode.

Abstract: A plate high-frequency electrode for supplying a high-frequency power of the VHF band and a grounding electrode are disposed in opposition to each other at an interval of less than 8 mm in a vacuum vessel; at least a silane-based gas and nitrogen gas as source gases are introduced into a reaction space of the vacuum vessel, and a silicon nitride deposited film is formed with the pressure of the reaction space being kept at 40 to 133. Thereby, a silicon nitride film with good quality can be obtained.