Abstract: Provided is a magnetic sensor circuit of low power consumption, in which a magnetic detection level less depends on a resistance value of an internal resistor of a power source. A comparator circuit compares a voltage which is based on a magnetic field and generated after sampling under a state in which power is supplied to mainly a Hall element and an amplifier circuit to drop a power supply voltage, with a reference voltage after sampling under the same state. Both the voltages are generated based on the power supply voltage dropped by an internal resistor. Therefore, the magnetic detection level less depends on a resistance value of the internal resistor. The comparator circuit may be disabled during a sample period, and the Hall element and the amplifier circuit may be disabled during a comparison period, and hence power consumption of the magnetic sensor circuit is reduced by corresponding power.

Abstract: Provided is a physical quantity sensor capable of improving physical quantity detection precision thereof. The physical quantity sensor includes a bridge resistance type physical quantity detection element for generating a voltage based on a bias current and a physical quantity, a current supply circuit for supplying the bias current to the physical quantity detection element, and a leakage current control circuit for causing leakage currents flowing when switches of the current supply circuit are in an off state to flow into a ground terminal.

Abstract: Provided is a magnetic sensor device including: a switching circuit that controls switching of a terminal pair of the magnetoelectric conversion element to which a supply voltage is applied and a terminal pair to which detection voltage of a magnetic intensity is output; a differential amplifier that differentially amplifies the detection voltage; a first capacitor connected to a first output terminal of the differential amplifier; a second switch connected to a second output terminal of the differential amplifier; a comparator that has a first input terminal connected to the first capacitor and a second input terminal connected to the second switch; a first switch connected between the first input terminal and an output terminal of the comparator; and a second capacitor connected to the second input terminal of the comparator; and a detection voltage setting circuit connected to the second capacitor, in which effects of respective offset voltages of the magnetoelectric conversion element, the amplifier, and

Abstract: Provided is a magnetic sensor device capable of suppressing a variation in determination for detection or canceling of a magnetic field intensity, which is caused by noise generated from respective constituent elements included in the magnetic sensor device and external noise, to thereby achieve high-precision magnetic reading. The magnetic sensor device includes: a first D-type flip-flop and a second D-type flip-flop each having an input terminal connected to an output terminal of a comparator; an XOR circuit having a first input terminal and a second input terminal which are connected to an output terminal of the first D-type flip-flop and an output terminal of the second D-type flip-flop, respectively; a selector circuit; and a third D-type flip-flop having an input terminal connected to an output terminal of the selector circuit.

Abstract: Provided is a physical quantity sensor capable of improving physical quantity detection precision thereof. The physical quantity sensor includes a bridge resistance type physical quantity detection element for generating a voltage based on a bias current and a physical quantity, a current supply circuit for supplying the bias current to the physical quantity detection element, and a leakage current control circuit for causing leakage currents flowing when switches of the current supply circuit are in an off state to flow into a ground terminal.

Abstract: Provided is a constant current circuit capable of low current consumption operation, which is prevented from repeating a start-up state and a zero steady state and entering an oscillating state when power is activated. When power is activated, until a node (A) reaches a start-up state, an excitation current is continued to be supplied to a node (B), to thereby reliably start up the constant current circuit in a short period of time without repeating the start-up state and the zero steady state.

Abstract: Provided is a magnetic sensor circuit of low power consumption, in which a magnetic detection level less depends on a resistance value of an internal resistor of a power source. A comparator circuit compares a voltage which is based on a magnetic field and generated after sampling under a state in which power is supplied to mainly a Hall element and an amplifier circuit to drop a power supply voltage, with a reference voltage after sampling under the same state. Both the voltages are generated based on the power supply voltage dropped by an internal resistor. Therefore, the magnetic detection level less depends on a resistance value of the internal resistor. The comparator circuit may be disabled during a sample period, and the Hall element and the amplifier circuit may be disabled during a comparison period, and hence power consumption of the magnetic sensor circuit is reduced by corresponding power.

Abstract: Provided is a magnetic sensor device including: a switching circuit that controls switching of a terminal pair of the magnetoelectric conversion element to which a supply voltage is applied and a terminal pair to which detection voltage of a magnetic intensity is output; a differential amplifier that differentially amplifies the detection voltage; a first capacitor connected to a first output terminal of the differential amplifier; a second switch connected to a second output terminal of the differential amplifier; a comparator that has a first input terminal connected to the first capacitor and a second input terminal connected to the second switch; a first switch connected between the first input terminal and an output terminal of the comparator; and a second capacitor connected to the second input terminal of the comparator; and a detection voltage setting circuit connected to the second capacitor, in which effects of respective offset voltages of the magnetoelectric conversion element, the amplifier, and

Abstract: A radio-frequency circuit comprises a low-noise amplifier, an NMOS mixer for converting a radio-frequency signal output from the low-noise amplifier into an intermediate-frequency signal, a polyphase filter for removing image noises, and a PMOS mixer for converting the intermediate-frequency signal passed through the polyphase filter into a baseband signal.

Abstract: To detect a magnetic flux density of a magnetic field applied from an outside, a semiconductor magnetic sensor of the present invention includes: a transistor (MP101) formed on a side of one, side of a hall element (100), for driving the hall element (100), the transistor (MP101) having a drain connected to a terminal (C101) formed on the one side; a transistor (MP102) formed on the side of the one side and having a drain connected to a terminal (C102) formed on the one side; a transistor (MN101) formed on a side of another side opposite to the one side and having a drain connected to a terminal (C103) formed on the another side; a transistor (MN102) formed on the side of the another side and having a drain connected to a terminal (C104) formed on the another side.

Abstract: To detect a magnetic flux density of a magnetic field applied from an outside, a semiconductor magnetic sensor of the present invention includes: a transistor (MP101) formed on a side of one, side of a hall element (100), for driving the hall element (100), the transistor (MP101) having a drain connected to a terminal (C101) formed on the one side; a transistor (MP102) formed on the side of the one side and having a drain connected to a terminal (C102) formed on the one side; a transistor (MN101) formed on a side of another side opposite to the one side and having a drain connected to a terminal (C103) formed on the another side; a transistor (MN102) formed on the side of the another side and having a drain connected to a terminal (C104) formed on the another side.

Abstract: A radio-frequency circuit comprises a low-noise amplifier, an NMOS mixer for converting a radio-frequency signal output from the low-noise amplifier into an intermediate-frequency signal, a polyphase filter for removing image noises, and a PMOS mixer for converting the intermediate-frequency signal passed through the polyphase filter into a baseband signal.